公开(公告)号：JP2003007301A

公开(公告)日：2003-01-10

申请号：JP2001185444

申请日：2001-06-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMITA TAKASHI ,  SAM HUY ,  MIYAKI YUKIO ,  SEGAWA TAKESHI

IPC: H01M10/05 ,  H01M4/13 ,  H01M4/133 ,  H01M4/62 ,  H01M10/0525 ,  H01M4/02 ,  H01M10/40

CPC classification number: Y02E60/122

Abstract: PROBLEM TO BE SOLVED: To provide a nonaqueous electrolyte secondary battery which has improved cycle characteristics and particularly is superior in cycle characteristics under the temperature higher than the room temperature. SOLUTION: In a nonaqueous electrolyte secondary battery 1 provided with a positive electrode 2 including a positive active material, a negative electrode 4 including a negative active material capable of storing and releasing lithium and a nonaqueous electrolyte, a rubidium compound is included in least either one of the positive electrode 2 or the negative electrode 4. This prevents a cation which has a detrimental effect on the negative electrode from being generated on the positive electrode in charging and discharging reaction under the temperature higher than the room temperature.

Abstract translation: 要解决的问题：提供一种具有改善的循环特性的非水电解质二次电池，并且在高于室温的温度下特别优选循环特性。 解决方案：在具有正极活性物质的正极2的非水电解质二次电池1中，包含能够储存和释放锂的负极活性物质和非水电解质的负极4至少包括一种 正极2或负极4.这防止了在高于室温的温度下在充电和放电反应中在正极上产生对负极具有不利影响的阳离子。

公开(公告)号：JP2001167198A

公开(公告)日：2001-06-22

申请号：JP34977599

申请日：1999-12-09

Applicant: SONY CORP

Inventor： HIRAYAMA TOMOHITO ,  TOMITA TAKASHI

IPC: G06F13/00 ,  G06F17/40 ,  G06Q30/02 ,  G06Q30/04 ,  G06Q30/06 ,  G06Q50/00 ,  G06Q99/00 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To decide the price of the contents data which are transferred through a network. SOLUTION: A total download frequency calculation system 11 receives the download frequencies from the contents servers 4-1 to 4-k through the Internet 2 and calculates the total download frequency for each of contents. A total reproduction frequency calculation system 12 receives the reproduction frequencies from the reproduction players 3-1 to 3-n through the Internet 2 and calculates the total reproduction frequency for each of contents. A market making index calculation system 13 calculates a market making index of contents from both total download frequency and total reproduction frequency.

公开(公告)号：JP2001015156A

公开(公告)日：2001-01-19

申请号：JP18684199

申请日：1999-06-30

Applicant: SONY CORP

Inventor： SAM FUI ,  TOMITA TAKASHI ,  SEGAWA TAKESHI

IPC: H01M10/05 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0567 ,  H01M10/40

Abstract: PROBLEM TO BE SOLVED: To made nonauqeous solvent used for nonaqueous electrolyte nonflammable and to improve the cycle characteristic of a battery by including phosphate compound or radical polymerization inhibitor in the nonaqueous electrolyte. SOLUTION: Phosphate compound contained in nonaqueous electrolyte is expressed by formula I. In the formula I, R1-R4 are a substituted or non- substituted cyclic aromatic group; and is a substituted or non-substituted cyclic aromatic group or heterocycle. Preferably, R1-R4 are each a phenyl group, a benzyl group, etc., and A is an ortho, meta, or para position substituted phenyl group, substituted biphenyl group, or bisphenol A. A phenotiazine compound expressed by formula II is preferable for the radial polymerization inhibitor contained in the nonaqueous electrolyte. In formula II, R5-R7 are each hydrogen atom, a substituted or non-substituted straight chain or branch alkyl group, etc., and X is absent or 1-2 (integer) oxygen atoms.

公开(公告)号：JPH11329503A

公开(公告)日：1999-11-30

申请号：JP12366498

申请日：1998-05-06

Applicant: SONY CORP

Inventor： ADACHI MOMOE ,  TOMITA TAKASHI

IPC: H01M4/62 ,  H01M4/13 ,  H01M10/05 ,  H01M10/052 ,  H01M10/0565 ,  H01M10/40

Abstract: PROBLEM TO BE SOLVED: To provide a nonaqueous secondary battery with high safety, less loss of energy density, high energy density, and high performance by giving a positive temperature coefficient resistor function to at least one of electrodes and a nonaqueous electrolyte. SOLUTION: A coin type battery 1 has a positive electrode 2, a negative electrode 3, and a nonaqueous electrolyte, and the positive electrode 2 and the negative electrode 3 are oppositely arranged via a separator 6. At least one of the positive electrode 2, the negative electrode 3, and the nonaqueous electrolyte has a positive temperature coefficient resistor function which increases the resistance at temperatures higher than a specified value. When the inside temperature of a battery reaches the specified threshold by an environment change or heat generation caused by overcharge, the internal resistance of the battery is increased suddenly and extremely, and current flowing through the battery is suppressed.

公开(公告)号：JPH10163109A

公开(公告)日：1998-06-19

申请号：JP409898

申请日：1998-01-12

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  HARA MASATERU ,  USUI SETSUO

IPC: H01L21/20

Abstract: PROBLEM TO BE SOLVED: To avoid the explosive emission of hydrogen in the annealing of a body to be annealed containing hydrogen, and to perform surely crystallization by annealing. SOLUTION: In a light beam annealing method for performing annealing by the sweeping application of light beams, a first process for applying light beams with a first energy to a hydrogenated body 1 to be annealed and for evaporating hydrogen contained in the body 1 to be annealed, and a second process for crystallizing the body 1 to be annealed by applying light beams with a second energy that is larger than the first energy to the body 1 to be annealed after the first process is conducted.

公开(公告)号：JPH09128811A

公开(公告)日：1997-05-16

申请号：JP28067395

申请日：1995-10-27

Applicant: SONY CORP

Inventor： AKIMOTO YOSHIHIRO ,  TOMITA TAKASHI

IPC: G11B7/24

Abstract: PROBLEM TO BE SOLVED: To reduce jitters and to make possible excellent signal reproduction by suppressing asymmetry caused when information is read. SOLUTION: When an optical disk is constituted so that an information signal read light wavelength is made 680nm, and an objective lens numerical aperture converging read light luminous flux on a signal recording surface is made 0.55, a beam spot size on the recording surface becomes 1.01μm. Then, a length of an embossment bit 2 existing in 1-7 modulation, mark edge recording is 2-8 times of a channel bit, 0.67-2.67μm, and the length of the embossment bit 2 of 1.33μm or above is longer than the beam spot size. In this optical disk, the embossment bit 2 width shorter than the beam spot size is narrower than the embossment width longer than the beam spot size. That is, the embossment bit width shorter than the beam spot size is made 75-85% extent of the embossment bit width longer than the beam spot size. Thus, the occurrence of the asymmetry is prevented.

公开(公告)号：JPH07326665A

公开(公告)日：1995-12-12

申请号：JP10481495

申请日：1995-04-05

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  USUI SETSUO

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/76 ,  H01L27/12

Abstract: PURPOSE:To manufacture an SOI substrate having a single crystal Sl film of uniform thickness which is excellent in thickness precision, and a high performance semiconductor device using the substrate, and enable using a substrate such as a glass substrate and a resin substrate which have no heat resistance. CONSTITUTION:The surface of a single crystal Si substrate 1 is selectively irradiated with a pulse laser beam, in a gas atmosphere containing carbon like C2H2, and SiC layers 3a, 3b, 3c are formed. Adhesive agent 5 which is to be cured at 400 deg.C or lower is spread on the surface of a glass substrate 4, and the surface side of the single crystal Si substrate 1 is bonded to the adhesive agent 5. The SiC layers 3a, 3b, 3c are used as grinding stoppers, and the single crystal Si substrate 1 is ground from the back side. Thereby the Si substrate 1 is turned into a thin film, so that a single crystal Si thin film is formed and an SOT substrate is manufactured. After that, a semiconductor device is manufactured by using the SOT substrate.

公开(公告)号：JPH0614511B2

公开(公告)日：1994-02-23

申请号：JP8125183

申请日：1983-05-10

Applicant: SONY CORP

Inventor： TOMITA TAKASHI

IPC: H01L21/20 ,  H01L21/208 ,  H01L21/324 ,  H01L21/473 ,  H01L21/84

公开(公告)号：JPH0556314B2

公开(公告)日：1993-08-19

申请号：JP16619184

申请日：1984-08-08

Applicant: SONY CORP

Inventor： TOMITA TAKASHI

IPC: C30B13/06 ,  C30B1/08 ,  C30B13/00 ,  H01L21/20 ,  H01L21/208 ,  H01L21/368

公开(公告)号：JPH02177443A

公开(公告)日：1990-07-10

申请号：JP33133788

申请日：1988-12-28

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  HARA MASATERU ,  USUI SETSUO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To facilitate annealing for crystallization and annealing for impurity diffusion or implantation simultaneously by one time light beam annealing by a method wherein, after dopant is implanted into the source and drain forming regions of an amorphous semiconductor layer or doped layers are formed in the source and drain forming regions, a light beam annealing process is carried out. CONSTITUTION:In order to manufacture a thin film transistor through a light beam annealing process in which an amorphous semiconductor layer 21 is crystallized or/and a fine polycrystalline semiconductor layer is recrystallized, dopant atoms are implanted into the source and drain forming regions of the amorphous semiconductor layer 21 or/and the polycrystalline semiconductor layer or doped layers 22 are formed in the source and drain forming regions and then a light beam is applied to the surface on which a gate 32 is formed or to the surface opposite to the surface on which the gate 32 is formed for annealing and the amorphous semiconductor layer 21 is crystallized or/and the fine polycrystalline semiconductor layer is recrystallized and, at the same time, source and drain regions 24 and 25 are formed. For instance, the pulse application of a laser beam L is employed for the light beam annealing.