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公开(公告)号：FR2779274B1
公开(公告)日：2000-08-18
申请号：FR9806687
申请日：1998-05-27
Applicant: ST MICROELECTRONICS SA
Inventor： GAYET PHILIPPE , GRANGER ERIC
IPC: H01L21/768 , H01L23/522 , H01L23/528 , H01L21/28
Abstract: Precision selective etching is carried out such that when an offset channel (20) is produced, it extends to a stop zone, and the channel metallization touches the side as well as the base portion of the lower via.
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