公开(公告)号：EP1907811A1

公开(公告)日：2008-04-09

申请号：EP05778689.9

申请日：2005-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

IPC: G01L9/06 ,  G01L19/06

CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

公开(公告)号：EP4312378A1

公开(公告)日：2024-01-31

申请号：EP23186598.1

申请日：2023-07-20

Applicant: STMicroelectronics S.r.l. ,  Alma Mater Studiorum - Università di Bologna

Inventor： D'ADDATO, Matteo ,  ELGANI, Alessia Maria ,  PERILLI, Luca ,  FRANCHI SCARSELLI, Eleonora ,  GNUDI, Antonio ,  CANEGALLO, Roberto Antonio ,  RICOTTI, Giulio

IPC: H03M1/06 ,  H03K5/08 ,  H03M1/36

Abstract: A threshold generator circuit (90) includes a clock node for receiving a clock signal ( Clk ) , a signal node for receiving a modulated signal (V amp ) switching between a first and a second DC voltage, a bias circuit (92) for producing a bias voltage ( V dc ) equal to the first DC voltage, an output node for producing the threshold voltage (V th ), a first capacitor (C1), a second capacitor (C2), and switching circuitry (S 1, S2, S3). The switching circuitry is switchable between a first configuration, where the first capacitor is coupled to the signal node, the second capacitor is coupled to the bias circuit, and the two capacitors are decoupled from each other, and a second configuration, where the first capacitor is decoupled from the signal node, the second capacitor is decoupled from the bias circuit, and the two capacitors are coupled to each other and to the output node.
The circuit further comprises control circuitry (94, 96, 98) configured to:
- initially set the switching circuitry in the first configuration in response to the modulated signal ( V amp ) having the second DC voltage, thereby charging the first capacitor (C1) to the second DC voltage and charging the second capacitor (C2) to the first DC voltage, and
- subsequently set the switching circuitry in the second configuration in response to an edge detected in the clock signal ( Clk ; CK ) , thereby producing the threshold voltage (V th ) at the output node after charge redistribution taking place between the first and second capacitors (C1, C2).

公开(公告)号：EP1907811B1

公开(公告)日：2012-04-25

申请号：EP05778689.9

申请日：2005-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo ,  MASTROMATTEO, Ubaldo

IPC: G01L9/00 ,  G01L19/06

CPC classification number: G01L9/0054 ,  G01L9/0045 ,  G01L15/00

Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The high­pressure detecting element (29) is sensitive to second values of pressure (P).

公开(公告)号：EP1907808A1

公开(公告)日：2008-04-09

申请号：EP05778683.2

申请日：2005-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： RICOTTI, Giulio ,  MORELLI, Marco ,  DELLA TORRE, Luigi ,  VITALI, Andrea, Lorenzo

IPC: G01L1/18 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L1/18 ,  B60T2270/82

Abstract: In an integrated pressure sensor (15) with a high full-scale value, a monolithic body (16) of semiconductor material has a first and a second main surface (16a and 16b), opposite and separated by a substantially uniform distance (w). The monolithic body (16) has a bulk region (17), having a sensitive portion (23) next to the first main surface (16a), upon which pressure (P) acts. A first piezoresistive detection element (18) is integrated in the sensitive portion (23) and has a variable resistance as a function of the pressure (P). The bulk region (17) is a solid and compact region and has a thickness substantially equal to the distance (w).