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    WIDE BANDWIDTH MEMS ACCELEROMETER FOR DETECTING VIBRATIONS
    21.
    发明公开
    WIDE BANDWIDTH MEMS ACCELEROMETER FOR DETECTING VIBRATIONS 审中-公开

    公开(公告)号：EP3945323A1

    公开(公告)日：2022-02-02

    申请号：EP21188923.3

    申请日：2021-07-30

    Applicant: STMicroelectronics S.r.l.

    Inventor： GATTERE, Gabriele ,  FEDELI, Patrick ,  VALZASINA, Carlo

    IPC: G01P15/09 ,  B81B3/00 ,  G01P15/08

    Abstract: A MEMS accelerometer including a supporting structure (2; 102) and at least one deformable group (21*, 51; 121*, 151) and one second deformable group (22*, 52; 122*, 152), which include, respectively, a first deformable cantilever element (21*; 121*) and a second deformable cantilever element (22*; 122*), which each have a respective first end, which is fixed to the supporting structure (2; 102), and a respective second end. The first and second deformable groups (21*, 51; 121*, 151) further include, respectively, a first piezoelectric detection structure (51; 151) and a second piezoelectric detection structure (52; 152). The MEMS accelerometer (1; 101) further includes: a first mobile mass (31, 131) and a second mobile mass (32, 132), which are fixed, respectively, to the second ends of the first and second deformable cantilever elements (21*, 22*; 121*, 122*) and are vertically staggered with respect to the first and second deformable cantilever elements (21*, 121*; 22*, 122*), respectively; and a first elastic structure (M1, M1'), which elastically couples the first and second mobile masses (31; 131; 32, 132).

    MEMS INCLINOMETER HAVING A REDUCED VIBRATION RECTIFICATION ERROR
    23.
    发明公开
    MEMS INCLINOMETER HAVING A REDUCED VIBRATION RECTIFICATION ERROR 审中-公开

    公开(公告)号：EP3872451A1

    公开(公告)日：2021-09-01

    申请号：EP21159287.8

    申请日：2021-02-25

    Applicant: STMicroelectronics S.r.l.

    Inventor： GATTERE, Gabriele ,  RIZZINI, Francesco

    IPC: G01C9/00 ,  G01P15/02 ,  G01P15/125 ,  G01C9/06

    Abstract: A MEMS inclinometer including a substrate (21), a first mobile mass (23) and a sensing unit (22,28A-28D,32A-32D, 24A-24D,27A-27B,29A-29B), which includes: a second mobile mass (22); a number of elastic elements (28A-28D), which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis (Y); a number of elastic structures (32A-32D), each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis (Y) and to a second axis (Z); a fixed electrode (29A) fixed with respect to the substrate and a mobile electrode (27A) fixed with respect to the second mobile mass, which form a variable capacitor (31A). Each elastic structure includes a respective elongated structure (32A-32D), which in resting conditions extends in a direction parallel to a third axis (X) and, in a plane parallel to a plane (ZY) containing the first and second axes (Y, Z), has main axes of inertia (I 1 , I 2 ) transverse with respect to the first and second axes (Y, Z) in such a way that movements of the first mobile mass in a direction parallel to the second axis cause corresponding movements of the second mobile mass in a direction parallel to the first axis.

    MICROELECTROMECHANICAL RESONATOR SYSTEM WITH IMPROVED STABILITY WITH RESPECT TO TEMPERATURE VARIATIONS
    26.
    发明公开
    MICROELECTROMECHANICAL RESONATOR SYSTEM WITH IMPROVED STABILITY WITH RESPECT TO TEMPERATURE VARIATIONS 审中-公开

    公开(公告)号：EP3477852A1

    公开(公告)日：2019-05-01

    申请号：EP18203883.6

    申请日：2018-10-31

    Applicant: STMicroelectronics S.r.l.

    Inventor： VALZASINA, Carlo ,  GATTERE, Gabriele ,  TOCCHIO, Alessandro ,  LANGFELDER, Giacomo

    IPC: H03B5/04 ,  H03B5/30 ,  H03L1/02 ,  G01R23/09 ,  H03H3/00

    Abstract: A MEMS resonator system (20) has a micromechanical resonant structure (22) and an electronic processing circuit (24), which has: a first resonant loop (24a), which excites a first vibrational mode of the structure and generates a first signal (S(f ΔT,1 )) at a first resonance frequency (f ΔT,1 ); and a compensation module (32), which compensates, as a function of a measurement of temperature variation (ΔT), a first variation (Δf 1 ) of the first resonance frequency caused by the temperature variation so as to generate a clock signal (CLK) at a desired frequency that is stable in regard to temperature. The electronic processing circuit further has: a second resonant loop (24b), which excites a second vibrational mode of the structure and generates a second signal (S(f ΔT,2 )) at a second resonance frequency (f ΔT,2 ); and a temperature-sensing module (30), which receives the first and second signals and generates the measurement of temperature variation as a function of the first variation of the first resonance frequency and of a second variation (Δf 2 ) of the second resonance frequency caused by the same temperature variation.

    Z-AXIS MICROELECTROMECHANICAL SENSOR DEVICE WITH IMPROVED STRESS INSENSITIVITY
    28.
    发明公开
    Z-AXIS MICROELECTROMECHANICAL SENSOR DEVICE WITH IMPROVED STRESS INSENSITIVITY 审中-公开

    公开(公告)号：EP4187258A1

    公开(公告)日：2023-05-31

    申请号：EP22206006.3

    申请日：2022-11-08

    Applicant: STMicroelectronics S.r.l.

    Inventor： GATTERE, Gabriele ,  RIZZINI, Francesco ,  DALL'OGLIO, Cristian

    IPC: G01P15/125 ,  G01P15/08

    Abstract: A microelectromechanical sensor device has a detection structure (10), having: a substrate (13), with a top surface (13a); an inertial mass (12), suspended above the top surface (13a) of the substrate (13) and elastically coupled to a rotor anchor (15) so as to perform an inertial movement relative to the substrate (13) as a function of a quantity to be detected; and stator electrodes (18a, 18b), integrally coupled to the substrate (13) at respective stator anchors (19a, 19b) and capacitively coupled to the inertial mass (12) so as to generate a differential capacitive variation in response to, and indicative of, the quantity to be detected. In particular, the inertial mass (12) performs, as the inertial movement, a translation movement along a vertical axis (z) orthogonal to the top surface (13a) of the substrate (13); and the stator electrodes (18a, 18b) are arranged in a suspended manner above the top surface (13a) of the substrate (13).

    Z-AXIS RESONANT ACCELEROMETER WITH IMPROVED-PERFORMANCE DETECTION STRUCTURE
    29.
    发明公开
    Z-AXIS RESONANT ACCELEROMETER WITH IMPROVED-PERFORMANCE DETECTION STRUCTURE 审中-公开

    公开(公告)号：EP4152010A1

    公开(公告)日：2023-03-22

    申请号：EP22195322.7

    申请日：2022-09-13

    Applicant: STMicroelectronics S.r.l.

    Inventor： ZEGA, Valentina ,  GATTERE, Gabriele ,  FRANGI, Attilio ,  OPRENI, Andrea ,  RIANI, Manuel

    IPC: G01P15/097 ,  G01P15/08

    Abstract: A detection structure (1) for a vertical-axis resonant accelerometer (32) is provided with: an inertial mass (2), suspended above a substrate (8) and having a window (5) provided therewithin and traversing it throughout a thickness thereof, the inertial mass (2) being coupled to a main anchorage (4), arranged in the window and integral with the substrate, through a first and a second anchoring elastic element (6a, 6b) of a torsional type and defining a rotation axis (A) of the inertial mass, such that they allow the inertial mass an inertial movement of rotation in response to an external acceleration (a ext ) acting along a vertical axis (z); and at least a first resonator element (10a), having longitudinal extension, coupled between the first elastic element and a first constraint element (12a) arranged in the window. The first constraint element is suspended above the substrate, to which it is fixedly coupled through a first auxiliary anchoring element (14a) which extends below the first resonator element with longitudinal extension and is integrally coupled between the first constraint element and the main anchorage (4).

    MEMS INERTIAL SENSOR WITH HIGH RESILIENCE TO THE PHENOMENON OF STICTION
    30.
    发明公开
    MEMS INERTIAL SENSOR WITH HIGH RESILIENCE TO THE PHENOMENON OF STICTION 审中-公开

    公开(公告)号：EP3882640A1

    公开(公告)日：2021-09-22

    申请号：EP21162249.3

    申请日：2021-03-12

    Applicant: STMicroelectronics S.r.l.

    Inventor： RIZZINI, Francesco ,  GATTERE, Gabriele ,  ZERBINI, Sarah

    IPC: G01P15/08 ,  G01P15/18 ,  B81B3/00 ,  G01C19/5733 ,  G01P15/125

    Abstract: A MEMS inertial sensor including: a supporting structure; an inertial structure, which includes at least one inertial mass; an elastic structure, which is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction; and a stopper structure, fixed with respect to the supporting structure and including at least one primary stopper element and one secondary stopper element . If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.

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