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公开(公告)号：US09660038B2
公开(公告)日：2017-05-23
申请号：US15208309
申请日：2016-07-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur
IPC: H01L21/20 , H01L27/12 , H01L29/20 , H01L29/861 , H01L29/78 , H01L29/66 , H01L29/778 , H01L29/423 , H01L29/872 , H01L29/93 , H01L29/10 , H01L23/367 , H01L29/40 , H01L29/417 , H01L29/06
CPC classification number: H01L29/2003 , H01L23/367 , H01L29/0623 , H01L29/0657 , H01L29/1087 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/41758 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/6609 , H01L29/66446 , H01L29/66477 , H01L29/7786 , H01L29/78 , H01L29/7831 , H01L29/7838 , H01L29/861 , H01L29/8613 , H01L29/872 , H01L29/93 , H01L2924/0002 , H01L2924/00
Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
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公开(公告)号：US20170098539A1
公开(公告)日：2017-04-06
申请号：US15283459
申请日：2016-10-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Mikhail Gaevski , Igor Agafonov , Robert M. Kennedy , Alexander Dobrinsky , Michael Shur , Emmanuel Lakios
IPC: H01L21/02 , H01L21/66 , H01L21/302 , H01L29/06 , H01L21/67 , H01L21/687
CPC classification number: H01L22/20 , C23C16/4586 , C23C16/46 , H01L21/02021 , H01L21/302 , H01L21/67103 , H01L21/67248 , H01L21/68735 , H01L21/68757 , H01L29/0692
Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
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公开(公告)号：US09391189B2
公开(公告)日：2016-07-12
申请号：US14885129
申请日：2015-10-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
IPC: H01L21/20 , H01L27/12 , H01L29/78 , H01L29/861 , H01L29/66 , H01L29/778 , H01L29/872 , H01L29/93 , H01L29/10 , H01L23/367 , H01L29/40 , H01L29/417 , H01L29/06 , H01L29/20 , H01L29/423
CPC classification number: H01L29/78 , H01L23/367 , H01L29/0623 , H01L29/1087 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41758 , H01L29/41766 , H01L29/42316 , H01L29/6609 , H01L29/66446 , H01L29/66477 , H01L29/7786 , H01L29/7831 , H01L29/7838 , H01L29/861 , H01L29/8613 , H01L29/872 , H01L29/93 , H01L2924/0002 , H01L2924/00
Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
Abstract translation: 提供了一种横向半导体器件和/或设计，其包括空间电荷产生层和位于器件沟道相对侧上的一组电极，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。
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公开(公告)号：US20150021664A1
公开(公告)日：2015-01-22
申请号：US14333890
申请日：2014-07-17
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
IPC: H01L29/778 , H01L29/205
CPC classification number: H01L29/7787 , H01L29/0653 , H01L29/2003 , H01L29/205 , H01L29/41766 , H01L29/7788
Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.
Abstract translation: 提供横向/垂直装置。 该装置包括装置结构，其包括具有侧部和垂直部分的装置通道。 器件通道的横向部分可以位于器件结构的第一表面附近，并且可以在第一表面上形成一个或多个触点和/或栅极。 器件结构还包括一组位于器件结构的器件结构中的绝缘层，该绝缘层位于器件沟道的侧面部分和与第一表面相对的器件结构的第二表面之间。 该组绝缘层中的开口限定了器件沟道的横向部分与器件沟道的垂直部分之间的过渡区域。 与设备通道的垂直部分的接触可以位于第二表面上。
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公开(公告)号：US20140291740A1
公开(公告)日：2014-10-02
申请号：US14225761
申请日：2014-03-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
CPC classification number: H03F3/2171 , H01L29/0603 , H01L29/0649 , H01L29/1029 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/66462 , H01L29/7787 , H03F3/2176
Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.
Abstract translation: 提供了包括到半导体通道的多个穿孔的装置。 该器件包括形成半导体沟道的半导体结构。 此外，器件包括源极接触，漏极接触和到半导体通道的栅极接触。 多个穿孔可以位于门接触下方的半导体结构中。 此外，多个穿孔中的穿孔可以延伸到半导体结构中超过半导体通道的位置。
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Patent Agency Ranking
公开(公告)号：US10950747B2
公开(公告)日：2021-03-16
申请号：US16012943
申请日：2018-06-20
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Alexander Dobrinsky , Maxim S. Shatalov , Michael Shur
Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
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公开(公告)号：US20190267512A1
公开(公告)日：2019-08-29
申请号：US16288852
申请日：2019-02-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Alexander Dobrinsky
Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.
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公开(公告)号：US20190207059A1
公开(公告)日：2019-07-04
申请号：US16299362
申请日：2019-03-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US10243100B2
公开(公告)日：2019-03-26
申请号：US15687606
申请日：2017-08-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC: H01L33/06 , H01L33/00 , H01L33/18 , H01L33/38 , H01S5/022 , H01L33/30 , H01S5/343 , H01S5/32 , H01S5/34
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US20170373222A1
公开(公告)日：2017-12-28
申请号：US15687606
申请日：2017-08-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC: H01L33/06 , H01S5/022 , H01L33/38 , H01L33/18 , H01L33/00 , H01S5/343 , H01L33/30 , H01S5/32 , H01S5/34
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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