Lateral/Vertical Semiconductor Device with Embedded Isolator
    24.
    发明申请
    Lateral/Vertical Semiconductor Device with Embedded Isolator 有权
    具有嵌入式隔离器的侧向/垂直半导体器件

    公开(公告)号:US20150021664A1

    公开(公告)日:2015-01-22

    申请号:US14333890

    申请日:2014-07-17

    Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

    Abstract translation: 提供横向/垂直装置。 该装置包括装置结构,其包括具有侧部和垂直部分的装置通道。 器件通道的横向部分可以位于器件结构的第一表面附近,并且可以在第一表面上形成一个或多个触点和/或栅极。 器件结构还包括一组位于器件结构的器件结构中的绝缘层,该绝缘层位于器件沟道的侧面部分和与第一表面相对的器件结构的第二表面之间。 该组绝缘层中的开口限定了器件沟道的横向部分与器件沟道的垂直部分之间的过渡区域。 与设备通道的垂直部分的接触可以位于第二表面上。

    Semiconductor Structure with Layer Having Protrusions

    公开(公告)号:US20190267512A1

    公开(公告)日:2019-08-29

    申请号:US16288852

    申请日:2019-02-28

    Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.

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