-
公开(公告)号：WO2010021998A1
公开(公告)日：2010-02-25
申请号：PCT/US2009/054062
申请日：2009-08-17
Applicant: SHOCKING TECHNOLOGIES, INC. , KOSOWSKY, Lex , FLEMING, Robert
Inventor： KOSOWSKY, Lex , FLEMING, Robert
IPC: H05K1/02
CPC classification number: H05K1/0257 , H05K1/0259 , H05K1/0373 , H05K1/167 , H05K3/4688 , H05K2201/0738 , H05K2201/09318 , Y10T428/24802 , Y10T428/31504
Abstract: A core layer structure is provided for substrate and packed devices. The core layer structure includes a first layer, a second layer combined with the first layer. A layer of voltage switchable dielectric (VSD) material provided in between the first layer and second layer.
Abstract translation: 为基板和打包装置提供芯层结构。 芯层结构包括第一层，与第一层结合的第二层。 设置在第一层和第二层之间的可变压电介质层（VSD）层。
-
22.发明申请
公开(公告)号：WO2008036423A3
公开(公告)日：2008-03-27
申请号：PCT/US2007/020682
申请日：2007-09-24
Applicant: SHOCKING TECHNOLOGIES, INC. , KOSOWSKY, Lex , FLEMING, Robert
Inventor： KOSOWSKY, Lex , FLEMING, Robert
IPC: H01L29/12
Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.
-
23.发明申请
公开(公告)号：WO2008016859A1
公开(公告)日：2008-02-07
申请号：PCT/US2007/074677
申请日：2007-07-29
Applicant: SHOCKING TECHNOLOGIES INC , KOSOWSKY, Lex , FLEMING, Robert
Inventor： KOSOWSKY, Lex , FLEMING, Robert
CPC classification number: H01B1/24 , H01L51/0037 , H01L51/0081
Abstract: A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.
Abstract translation: 使用具有较高纵横比的半导体或导电材料的可变压电介质（VSD）材料的组合物，用于增强VSD材料的机械和电气特性。
-
24.发明申请VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING CONDUCTIVE OR SEMI-CONDUCTIVE ORGANIC MATERIAL 审中-公开具有导电或半导电有机材料的电压可切换介电材料
公开(公告)号：WO2008016858A1
公开(公告)日：2008-02-07
申请号：PCT/US2007/074676
申请日：2007-07-29
Applicant: SHOCKING TECHNOLOGIES INC , KOSOWSKY, Lex , FLEMING, Robert
Inventor： KOSOWSKY, Lex , FLEMING, Robert
IPC: H01B1/24
CPC classification number: H01B1/24 , H01L51/0037 , H01L51/0081
Abstract: One or more embodiments provide for a composition that includes (i) organic material that is conductive or semi-conductive, and (ii) conductor and/or semiconductor particles other than the organic material. The organic material and the conductor and/or semiconductor particles are combined to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level.
Abstract translation: 一种或多种实施方式提供了一种组合物，其包含（i）导电或半导电的有机材料，和（ii）除有机材料以外的导体和/或半导体颗粒。 将有机材料和导体和/或半导体颗粒结合起来，为组合物提供以下特性：（i）在没有超过特征电压电平的电压时为电介质，和（ii）施加超过 特征电压水平。
-
25.发明公开VOLTAGE SWITCHABLE DIELECTRIC MATERIALS WITH LOW BAND GAP POLYMER BINDER OR COMPOSITE 审中-公开可逆电压和聚合物粘合剂或复合材料具有低波段区间介质材料
公开(公告)号：EP2257979A1
公开(公告)日：2010-12-08
申请号：EP09724188.9
申请日：2009-03-26
Applicant: Shocking Technologies Inc
Inventor： FLEMING, Robert , KOSOWSKY, Lex , SHI, Ning , WU, Junjun
CPC classification number: H01B1/22 , H01L23/60 , H01L27/0248 , H01L27/101 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
Abstract: A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.
-
Patent Agency Ranking26.发明公开VOLTAGE SWITCHABLE DIELECTRIC MATERIAL INCORPORATING MODIFIED HIGH ASPECT RATIO PARTICLES 审中-公开与修饰粒子的长径比高压开关绝缘材料
公开(公告)号：EP2191043A1
公开(公告)日：2010-06-02
申请号：EP08798196.5
申请日：2008-08-19
Applicant: Shocking Technologies Inc
Inventor： KOSOWSKY, Lex , FLEMING, Robert , WU, Junjun
CPC classification number: H01C7/1013 , B82Y10/00 , H01C7/105 , H05K1/0257 , H05K1/0259 , H05K1/0373 , H05K1/167 , H05K2201/0218 , H05K2201/0248 , H05K2201/026 , H05K2201/0738 , H05K2203/105
Abstract: Embodiments described herein provide for a composition of voltage switchable dielectric (VSD) material that includes a concentration of modified high-aspect ratio (HAR) particles. In an embodiment, at least a portion of the concentration includes HAR particles are surface-modified to provide core-shell HAR particles. As an alternative or addition, a portion of the concentration includes HAR particles that are surface-modified to have activated surfaces.
-
27.发明公开FORMULATIONS FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING A STEPPED VOLTAGE RESPONSE AND METHODS FOR MAKING THE SAME 审中-公开FOR A SPANNUNGSUMSCHALTBARES介电材料配方具有产生阶梯电压响应然后处理
公开(公告)号：EP2084748A2
公开(公告)日：2009-08-05
申请号：EP07838813.9
申请日：2007-09-24
Applicant: Shocking Technologies Inc
Inventor： KOSOWSKY, Lex , FLEMING, Robert
IPC: H01L29/12
CPC classification number: H01L21/02118 , B82Y30/00 , H01C7/12 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/02175 , H01L21/312 , H01L21/3148 , H01L21/318 , Y10S438/90
Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.
-
公开(公告)号：EP2758992A2
公开(公告)日：2014-07-30
申请号：EP12834081.7
申请日：2012-09-21
Applicant: Shocking Technologies Inc
Inventor： FLEMING, Robert , GLICKMAN, Michael , GRAYDON, Bhret , WU, Junjun , VASQUEZ, Daniel
IPC: H01L27/04
CPC classification number: H01L27/0288 , H01L23/5252 , H01L23/60 , H01L2924/0002 , H05K1/0257 , H05K1/0259 , H05K1/16 , H05K2201/0738 , H01L2924/00
Abstract: Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switchable dielectric material to achieve vertical and/or dual switching protection against ESD and other overvoltage events.
-
29.发明公开
公开(公告)号：EP2540147A1
公开(公告)日：2013-01-02
申请号：EP11748214.1
申请日：2011-02-26
Applicant: Shocking Technologies Inc
Inventor： KOSOWSKY, Lex , FLEMING, Robert , GRAYDON, Bhret , VASQUEZ, Daniel
IPC: H05K1/09
CPC classification number: H05K1/0254 , H05K1/0259 , H05K1/181 , H05K2201/0738 , H05K2203/304
Abstract: Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.
-
30.发明公开SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION 审中-公开衬底装置OR ENCAPSULATION具有嵌入的双电压的介电材料在垂直开关配置的层
公开(公告)号：EP2277364A1
公开(公告)日：2011-01-26
申请号：EP09732672.2
申请日：2009-04-13
Applicant: Shocking Technologies Inc
Inventor： KOSOWSKY, Lex , FLEMING, Robert , GRAYDON, Bhret
IPC: H05K1/02
CPC classification number: H05K1/0257 , H05K1/0259 , H05K1/0373 , H05K2201/0738 , H05K2203/105
Abstract: A substrate device includes an embedded layer of VSD material (230) that overlays a conductive element or layer (240) to provide a ground. An electrode (210), connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.
-
-
-
-
-
-
-
-
-
Search Results
45
records
(took 0.027 seconds)
