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    CRYSTALLIZING METHOD OF SEMICONDUCTOR THIN FILM
    26.
    发明专利
    CRYSTALLIZING METHOD OF SEMICONDUCTOR THIN FILM 失效

    公开(公告)号：JPS60183718A

    公开(公告)日：1985-09-19

    申请号：JP4106984

    申请日：1984-03-02

    Applicant: SONY CORP

    Inventor： KANOU YASUO ,  USUI SETSUO

    IPC: H01L27/00 ,  H01L21/20

    Abstract: PURPOSE:To provide recrystallized thin films whose plane orientations are aligned, without resulting grain boundaries or cracks in island areas, by forming narrower portions with a specific shape in a belt-shape semiconductor thin film. CONSTITUTION:An SiO2 film 2 and a polycrystalline silicon layer are coated on a quartz plate 1. Thereafter, when belt-shape polycrystalline silicon thin films 4 are formed using etching, narrower portions 5 are formed so as to become L/l>=2.5, where L is a width in a direction orthogonal to the longitudinal direction of the thin film 4 or the scanning direction A of laser beams and l is a width of the narrower portions in the same direction. Next, an SiO2 layer 7 is deposited thereon to form a silicon substrate 8. On the silicon substrate 8 the laser beams are scanned to recrystallize polycrystalline silicon thin films. In this way, in the island areas 6, single crystal silicon thin films whose plane orientations are aligned and which do not result in cracks are formed.

    Heating of thin film
    27.
    发明专利
    Heating of thin film 失效
    加热薄膜

    公开(公告)号：JPS59193022A

    公开(公告)日：1984-11-01

    申请号：JP6660183

    申请日：1983-04-15

    Applicant: Sony Corp

    Inventor： TOMITA TAKASHI ,  KANOU YASUO ,  USUI SETSUO

    IPC: H01L21/20 ,  H01L21/268

    CPC classification number: H01L21/268

    Abstract: PURPOSE:To enable to heat selectively only the desired part of a thin film formed on a substrate by obtaining intense absorption of a laser beam according to the interference effect by a method wherein film thickness of the heating necessitating part of the thin film is so selected as to make light volume of the laser beam to irradiate therein large, and the laser beam is made to irradiate thereto. CONSTITUTION:A thin film 2 having the refractive index of n2 and having film thickness of (d) is interposed between layers 1, 3 having respectively the refractive indexes of n1, n3, and monochromatic light 4 having the wavelength of lambda is irradiated from the layer 1 side. When relation n1, n3

    Abstract translation: 目的：为了能够通过根据干涉效应通过获得激光束的强烈吸收来选择性地加热形成在基板上的薄膜的所需部分，其中通过选择需要薄膜部分的加热的膜厚度 使激光束的光量在其中大量照射，使激光束照射到其上。 构成：具有折射率n2且膜厚度为（d）的薄膜2被插入在折射率为n1，n3的层1,3之间，并且具有波长为λ的单色光4从 第1层。 当折射率之间存在关系n1，n3

    Manufacture of semiconductor crystal film
    28.
    发明专利
    Manufacture of semiconductor crystal film 失效
    半导体晶体膜的制造

    公开(公告)号：JPS59114815A

    公开(公告)日：1984-07-03

    申请号：JP22473282

    申请日：1982-12-21

    Applicant: Sony Corp

    Inventor： KANOU YASUO ,  USUI SETSUO ,  SAWADA AKASHI

    IPC: H01L21/20 ,  H01L21/268

    CPC classification number: H01L21/2026

    Abstract: PURPOSE:To manufacture excellent silicon film of advanced crystallization in comparison to the prior art, by a method wherein two laser beams by dividing one laser beam are partially superposed, and the laser beam having double- humped energy density distribution is constituted. CONSTITUTION:One laser beam is divided into two laser beams B1 and B2, and spots 26 and 27 of the laser beams B1 and B2 are partially overlapped with each other thereby laser beam B3 having double-humped energy density distribution 28 is formed. The laser beam B3 is projected on a polycrystalline silicon film 3 and scanned in arrow M direction thereby the polycrystalline silicon film 3 is made a single crystal. The polycrystalline silicon film 3 on which the laser beam B3 is scanned is melted by the heat energy, but corresponding to the double-humped energy the polycrystalline silicon film 3 after scanned also has double-humped characteristics at a border line 32 between a molten region 33 and a recrystallization region so that a single-crystal silicon region 32 is formed from the center to rear portion and a polycrystalline silicon region 31 is formed from the top end as the border towards both sides of the recrystallization region.

    Abstract translation: 目的：与现有技术相比，为了制造先进结晶的优异硅膜，通过将一个激光束分成两束的激光束部分重叠，构成具有双峰能量密度分布的激光束的方法。 构成：一个激光束被分成两束激光束B1和B2，激光束B1和B2的斑点26和27彼此部分重叠，从而形成具有双重峰值能量密度分布的激光束B3。 激光束B3投影在多晶硅膜3上并沿箭头M方向扫描，从而将多晶硅膜3制成单晶。 扫描激光束B3的多晶硅膜3通过热能熔化，但对应于双波峰能量，扫描后的多晶硅膜3在熔融区域之间的边界线32处也具有双峰特性 33和再结晶区域，使得从中心到后部形成单晶硅区域32，并且从顶端形成多晶硅区域31作为再​​结晶区域的两侧的边界。

    Line sensor
    29.
    发明专利
    Line sensor 失效
    线传感器

    公开(公告)号：JPS5750471A

    公开(公告)日：1982-03-24

    申请号：JP12688280

    申请日：1980-09-12

    Applicant: Sony Corp

    Inventor： KANOU YASUO ,  USUI SETSUO ,  SAWADA AKASHI

    IPC: H04N1/028 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/0264

    CPC classification number: H01L31/02327

    Abstract: PURPOSE:To obtain a line sensor having a light guide system which is excellent in light utilizability and durable to a high-temperature treatment, by a method wherein a light guide path, surrounded by light reflection layers and corresponding to each of picture elements in the line direction, is formed between two substrates whose light-source sides are transparent. CONSTITUTION:Light reflection layers 13 made of thin metal films are formed between two substrates 11, 12 whose light-source sides are transparent in order to form a light guide path 14 surrounded by the light reflection layers 13 and led to each sensor portion so as to correspond to each of picture elements in the line direction. Each light guide path 14 can be filled with a transparent resin or a transparent adhesive agent. At the bottom of a lght guide portion 5, which contacts with an orginal 4, a transparent protective film 15 is formed. The light 18 from a light source is applied to the original surface and the reflected light 17 is sent to each light receiving portion of a line sensor through the corresponding light guide path 14. Because the light guide path 14 is surrounded by the reflection layers 14, the light utilizability can be made higher, and an improved resolution can be obtained.

    Abstract translation: 目的：为了获得具有光利用率优异并耐久耐高温处理的导光系统的线传感器，通过这样一种方法，其中光导路径被光反射层包围并对应于每个像素 线方向形成在两个基板之间，其光源侧是透明的。 构成：由光源侧透明的两个基板11,12之间形成由薄金属膜制成的光反射层13，以形成被光反射层13包围的导光路径14，并被引导到每个传感器部分，以便 以对应于行方向上的每个图像元素。 每个导光路径14可以用透明树脂或透明粘合剂填充。 在与原件4接触的高度引导部分5的底部形成透明保护膜15。 来自光源的光18被施加到原始表面，并且反射光17通过相应的光导路径14被传送到线传感器的每个光接收部分。由于导光路径14被反射层14包围 ，可以使光利用率更高，并且可以获得改进的分辨率。

    PREPARATION OF SOLID IMAGE PICKUP ELEMENT
    30.
    发明专利
    PREPARATION OF SOLID IMAGE PICKUP ELEMENT 失效

    公开(公告)号：JPS5649577A

    公开(公告)日：1981-05-06

    申请号：JP12590479

    申请日：1979-09-28

    Applicant: SONY CORP

    Inventor： MATSUMOTO HIROYUKI ,  KANOU YASUO

    IPC: H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728

    Abstract: PURPOSE:To obtain a highly integrated solid image pickup element by a method wherein an overflow drain and a control gate region are formed by self-matching in a simple process to uniformly provide the length of the channel of the control gate with high accuracy. CONSTITUTION:A mask of SiO2 is prepared on a P type Si substrate and N channels 25, 26 are formed by P ion implantation in the portion corresponding to a sensor 3 and a vertical shift register 21. Then an N layer 27 corresponding to an overflow drain 4 through an opening 23 is also formed. After applying a photoresist mask having an opening slightly larger than the opening 23, an N overflow drain 2 is formed by injecting P ions and simultaneously a P type overflow control gate layer 4 as well as a channel stopper 5 are formed. In such a constitution as this, the layers 2, 4 are formed by self-matching, and their accuracy is limited to only the accuracy of the mask of SiO2 and the resolving power of the resist mask 29. A highly accurate overflow control layer 4 is therefore obtainable, so that a highly accurate and integrated image pickup element is readily obtained.

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