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    1.
    发明专利
    未知

    公开(公告)号：DE2602800A1

    公开(公告)日：1976-08-05

    申请号：DE2602800

    申请日：1976-01-26

    Applicant: SONY CORP

    Inventor： OCHI SHIGEYUKI ,  YAMANAKA SEISUKE ,  KANOU YASUO

    IPC: C07C17/32 ,  H01L27/148 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/3728 ,  H04N9/04 ,  H04N3/14

    Abstract: In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.

    2.
    发明专利
    未知

    公开(公告)号：CH607333A5

    公开(公告)日：1978-12-15

    申请号：CH109676

    申请日：1976-01-29

    Applicant: SONY CORP

    Inventor： OCHI SHIGEYUKI ,  YAMANAKA SEISUKE ,  KANOU YASUO

    IPC: C07C17/32 ,  H01L27/148 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/3728 ,  H04N9/04 ,  H01L27/14 ,  H04N3/14

    Abstract: In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.

    SOLID STATE CAMERA
    4.
    发明专利
    SOLID STATE CAMERA 未知

    公开(公告)号：CA1026456A

    公开(公告)日：1978-02-14

    申请号：CA223328

    申请日：1975-03-27

    Applicant: SONY CORP

    Inventor： YAMANAKA SEISUKE ,  KANOU YASUO ,  MIFUNE TADAYOSHI ,  SHIMADA SATOSHI

    IPC: H04N5/335 ,  H04N5/341 ,  H04N5/349 ,  H04N5/351 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378 ,  H04N9/04 ,  H04N9/07 ,  H04N3/14

    Abstract: A solid-state video camera employing a plurality of image sensing means in the form of charge coupled device chips which are arranged in such a manner that the video image cast on respective chips are displaced by distance equal to tau H/N where tau H is the reciprocal of the image sampling frequency, also referred to as the alignment pitch of the picture elements in the horizontal direction and N is the number of charge coupled chips. After converting the images into electrical signals, read-out timings of given picture elements of respective chips are shifted in time in accordance with the shift in distance between the images on the respective chips prior to mixing the output signals. In this way a video output signal having a wide-band width is obtained. In addition, color video information is possible by the use of color filters which may be disposed in front of the respective charge coupled chips.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    6.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS60245124A

    公开(公告)日：1985-12-04

    申请号：JP10018084

    申请日：1984-05-18

    Applicant: SONY CORP

    Inventor： USUI SETSUO ,  SAMEJIMA TOSHIYUKI ,  KANOU YASUO

    IPC: C30B30/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    Abstract: PURPOSE:To readily obtain a thin film transistor by employing a short wavelength pulse laser light, locally crystallizing an amorphous or polycrystalline semiconductor thin film and activating an impurity. CONSTITUTION:A pulse laser light having 150-350nm of wavelength, 20nsec of pulse width, 10 -10 Wcm of peak intensity, 200-500mJ/cm of one pulse energy is employed. Aluminum gate electrode 2 is formed on a glass substrate 1, an SiO2 film 3, an amorphous hydrogenated Si film 4, and an n type amorphous hydrogenated Si film 5 are superposed, the films 4, 5 are patterned to form an insula region. Mo source and drain electrodes 6, 7 are attached, and alpha-Si:H film 5 on the portion corresponding to a channel is selectively removed. Then, an SiO2 film 8 is coated, prescribed UV pulse laser light 10 is emitted from the surface, a channel 4c is polycrystallized or single crystallized to obtain a thin film FET. According to this construction, even after alpha-Si:H or electrodes are formed, a crystallization at room temperature can be performed to simplify the manufacture of a thin film FET.

    PROCESS FOR SEMICONDUCTOR SUBSTRATE
    7.
    发明专利
    PROCESS FOR SEMICONDUCTOR SUBSTRATE 失效

    公开(公告)号：JPS56133839A

    公开(公告)日：1981-10-20

    申请号：JP3713680

    申请日：1980-03-24

    Applicant: SONY CORP

    Inventor： SHIMADA TAKASHI ,  KANOU YASUO ,  AOYAMA JIYUNICHI

    IPC: H01L21/322

    Abstract: PURPOSE:To prevent a deterioration in crystallization of a surface accompanying with a gettering process by forming a blocking diffusion layer on the surface of a semiconductor substrate wherein the surface of the substrate is removed with the blocking diffusion layer as far as predetermined depth after diffusing P on the reverse side of the substrate. CONSTITUTION:A blocking diffusion layer 2 of SiO2 or the like is formed on the surface of an Si substrate 1 consisting of dislocationless CZ crystal doped B and P is diffused on the reverse side of the substrate with high concentration to form a P diffusion layer 3 and a P glass layer 4 respectively and the SiO2 film 2 on the surface of the substrate is removed after providing a CVD film 5 on the reverse side of the layer 4 to eliminate the surface region of the substrate as far as 10mu or more in depth (the position of a pointed chain line). In this way, occurrence of a stacked layer defect accompanying with a gettering process and the influence of P will be prevented. Therefore, the electrical characteristics of an Si device will be improved.

    SOLID STATE PICKUP DEVICE
    8.
    发明专利
    SOLID STATE PICKUP DEVICE 失效

    公开(公告)号：JPS5531333A

    公开(公告)日：1980-03-05

    申请号：JP10455378

    申请日：1978-08-28

    Applicant: SONY CORP

    Inventor： KANOU YASUO ,  OCHI NARIYUKI ,  MATSUMOTO HIROYUKI

    IPC: H01L27/148 ,  H01L31/00 ,  H04N5/30 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/353 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/378

    Abstract: PURPOSE:To obtain a solid state pickup device featuring the inter-line transfer system and through the CCD-type structure. CONSTITUTION:A number of sensor parts 1 are arrayed on the common semiconductor substrate with installation of vertical and horizontal shift registers 2 and 3. And the signal charge corresponding to the reception light quantity of 1 is transferred to corresponding transfer part 11 of 2 in the vertical blanking period, and the double-phase clock pulse is applied to terminals T1 and T2. And in the horizontal blanking period, the signal charge is sent to the adjacent transfer parts in a direction, and the signals are transferred to register 3 with every horizontal line. Thus the signals are read out through terminal t with every horizontal line during the horizontal video period. The voltage to overflow electrode 18 is increased to control the non-storage time of the signal charge at sensor part 1. In such way, the automatic adjustment is given to the sensitivity. At the same time, the gamma correction is ensured by changing gradually the voltage at overflow control part 9.

    HEAT TREATMENT AND APPARATUS THEREFOR
    10.
    发明专利
    HEAT TREATMENT AND APPARATUS THEREFOR 失效

    公开(公告)号：JPS60257511A

    公开(公告)日：1985-12-19

    申请号：JP11430684

    申请日：1984-06-04

    Applicant: SONY CORP

    Inventor： KANOU YASUO ,  USUI SETSUO

    IPC: H01L21/20 ,  B21D43/09 ,  B65H5/06 ,  H01L21/263 ,  H01L21/268

    Abstract: PURPOSE:To obtain a crystal thin film over a widened area and with excellent reproducibility, by a method wherein an object of treatment is heat-treated using an energy beam shaped by a split semicylindrical lens and a semicylindrical lens disposed so that their longitudinal axes directions cross perpendicularly to each other. CONSTITUTION:At a focal plane fb, a laser beam having Gaussian distribution is split at the center, and the split portions overlap with each other, whereby a linear laser beam B04 shown at D is obtained which has a substantially uniform energy density distribution. At a focal plane fa, two linear laser beams B06 are obtained which have a Gaussian energy density distribution. Between the focal planes fa and fb, a laser beam B05 is obtained which has such a beam spot configuration that two cut elliptical beams face each other, that is, a double-humped energy density distribution. Employment of the linear laser beam B04 having a uniform energy density distribution enables crystallization to be obtained over a widened area and with excellent reproducibility. When the laser beam having a double-humped energy density distribution is applied to a polycrystalline silicon film so as to be recrystallized, it is also possible to obtain a silicon crystal film with excellent crystallizability.

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