中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

53 records (took 0.027 seconds)

    LIQUID CRYSTAL DISPLAY
    21.
    发明申请
    LIQUID CRYSTAL DISPLAY 有权
    液晶显示器

    公开(公告)号：US20070229747A1

    公开(公告)日：2007-10-04

    申请号：US11743378

    申请日：2007-05-02

    Applicant: Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

    Inventor： Woo-Suk Chung ,  Chi-Woo Kim ,  Bo-Young An ,  Hyong-Gon Lee ,  Sung-Hee Cho

    IPC: G02F1/1343

    CPC classification number: G02F1/133512 ,  G02F1/134336 ,  G02F1/1345 ,  G02F2001/133337 ,  G02F2001/133388 ,  G02F2001/133397 ,  G09G3/3648 ,  G09G2330/08 ,  G09G2330/10

    Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrode, and an image defect area caused by the impurity ions is screened with the black matrix.

    Abstract translation: 在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线 和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向 位于外围区域的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分停止，并且屏蔽由杂质离子引起的图像缺陷区域 与黑色矩阵。

    Method for forming electron emission source for electron emission device and electron emission device using the same
    22.
    发明申请
    Method for forming electron emission source for electron emission device and electron emission device using the same 审中-公开
    用于形成电子发射器件的电子发射源和使用其的电子发射器件的方法

    公开(公告)号：US20050184643A1

    公开(公告)日：2005-08-25

    申请号：US11066854

    申请日：2005-02-24

    Applicant: Sung-Hee Cho ,  Jong-Hwan Park ,  Sang-Hyun Lee

    Inventor： Sung-Hee Cho ,  Jong-Hwan Park ,  Sang-Hyun Lee

    IPC: H01J29/04 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J31/12

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446

    Abstract: The present invention relates to a method for forming an electron emission source for an electron emission device and an electron emission device produced by the method. The method for forming an electron emission source comprises: depositing at least one kind of charged particles selected from the group consisting of carbon-based materials, metal particles, inorganic particles, and organic materials to a substrate charged by the opposite charge. The method provides an electron emission source for an electron emission device upon which carbon nanotubes are selectively deposited in a desired pattern without leaving surplus organic carbon. The resulting electron emission devices exhibit excellent life and electron emission characteristics. The method does not require additional surface treatment.

    Abstract translation: 本发明涉及用于形成电子发射器件的电子发射源的方法和通过该方法制造的电子发射器件。 形成电子发射源的方法包括：将从碳基材料，金属颗粒，无机颗粒和有机材料中选出的至少一种带电粒子沉积到由相反电荷充电的衬底上。 该方法提供了电子发射装置的电子发射源，在该电子发射装置上，以期望的图案选择性地沉积碳纳米管，而不留下剩余的有机碳。 所得到的电子发射器件具有优异的寿命和电子发射特性。 该方法不需要额外的表面处理。

    Sense amplifier circuit for use in a nonvolatile semiconductor memory device
    24.
    发明授权
    Sense amplifier circuit for use in a nonvolatile semiconductor memory device 失效
    用于非易失性半导体存储器件的感测放大器电路

    公开(公告)号：US06400606B1

    公开(公告)日：2002-06-04

    申请号：US09677287

    申请日：2000-10-02

    Applicant: Sung-Hee Cho

    Inventor： Sung-Hee Cho

    IPC: G11C1134

    CPC classification number: G11C16/28

    Abstract: A novel sense amplifier circuit is provided that includes a resistor and a reference cell connected in parallel to a reference line. The reference cell is composed of a floating-gate field effect transistor having the same characteristic as a memory cell. The reference cell is programmed so as to have a threshold voltage between the threshold voltages of an associated memory cell transistor in an on-state and an off state. According to this circuit configuration, a reference current is determined only by a current flowing through the resistor, when a gate voltage to a memory/reference cell is higher than the threshold voltage of the reference cell. This forces the reference current to exist between the on-cell current and the off-cell current, regardless of the gate voltage. Therefore, the maximum operating voltage of the sense amplifier circuit according to the invention is not limited by a variation of the gate voltage to the memory/reference cell, or by a variation of a power supply voltage.

    Abstract translation: 提供了一种新颖的读出放大器电路，其包括与参考线并联连接的电阻器和参考单元。 参考单元由具有与存储单元相同特性的浮栅场效应晶体管组成。 参考单元被编程为具有处于导通状态和截止状态的相关联的存储单元晶体管的阈值电压之间的阈值电压。 根据该电路结构，当存储器/参考单元的栅极电压高于参考单元的阈值电压时，仅通过流经电阻器的电流确定参考电流。 这迫使参考电流存在于电池电流和截止电池电流之间，而不管栅极电压如何。 因此，根据本发明的读出放大器电路的最大工作电压不受限于栅极电压与存储器/参考单元的变化或者电源电压的变化的限制。

    Semiconductor memory device having an improved error correction capability
    25.
    发明授权
    Semiconductor memory device having an improved error correction capability 失效
    半导体存储器件具有改进的纠错能力

    公开(公告)号：US5313425A

    公开(公告)日：1994-05-17

    申请号：US051408

    申请日：1993-04-23

    Applicant: Hyong-Gon Lee ,  Sung-Hee Cho ,  Se-Jin Kim

    Inventor： Hyong-Gon Lee ,  Sung-Hee Cho ,  Se-Jin Kim

    IPC: G06F11/16 ,  G06F11/10 ,  G11C29/00 ,  G11C29/42 ,  G11C13/00

    CPC classification number: G11C29/88 ,  G06F11/1008

    Abstract: A semiconductor memory device which is comprised of a plurality m of electrically isolated data memory sub-arrays for storing data bits and a plurality k of electrically isolated parity memory sub-arrays for storing parity bits, wherein each of the data and parity memory sub-arrays includes a plurality of memory cells arranged in a matrix of rows and columns, with the memory cells in each row connected to a common word line and the memory cells in each column connected to a common bit line. Row address decoders function to activate a selected word line in each of the memory sub-arrays, and column address decoders, in combination with column selection circuitry, function to couple a selected bit line in each of the memory sub-arrays to a plurality m of sense amplifiers, which function to sense the voltage level of respective ones of the selected bit lines, and produce output data and parity bits representative of these sensed voltage levels. An error checking and correction circuit compares the output data and parity bits in order to detect and correct errors in the output data bits. Because of the unique architecture of the semiconductor memory device of this invention, defects in word lines or bit lines are confined to a single bit, thereby rendering these defects easily reparable by means of an ECC circuit alone, and thus dispensing with the need for a redundant memory circuit.

    Abstract translation: 一种半导体存储器件，包括用于存储数据位的多个电绝缘数据存储器子阵列和用于存储奇偶校验位的多个电隔离奇偶校验存储器子阵列，其中数据和奇偶校验存储器子阵列中的每一个， 阵列包括以行和列的矩阵排列的多个存储单元，每行中的存储单元连接到公共字线，并且每列中的存储单元连接到公共位线。 行地址解码器用于激活每个存储器子阵列中的所选择的字线以及与列选择电路组合的列地址解码器，用于将每个存储器子阵列中的选定位线耦合到多个m 感测放大器，其用于感测所选位线中的相应位线的电压电平，并且产生表示这些感测电压电平的输出数据和奇偶校验位。 错误检查和校正电路比较输出数据和奇偶校验位，以便检测和纠正输出数据位中的错误。 由于本发明的半导体存储器件的独特架构，字线或位线中的缺陷被限制在单个位，从而使得这些缺陷易于通过ECC电路单独进行修复，从而不需要一个 冗余存储电路。

    COSMETIC COMPOSITION COMPRISING MOLECULAR ENCAPSULATED FERMENTED EXTRACT OF RHUS JAVANICA L. AS AN ACTIVE INGREDIENT
    27.
    发明申请
    COSMETIC COMPOSITION COMPRISING MOLECULAR ENCAPSULATED FERMENTED EXTRACT OF RHUS JAVANICA L. AS AN ACTIVE INGREDIENT 审中-公开
    化妆品组合物，其包含分子式加入的真菌成分提取物作为活性成分

    公开(公告)号：US20110318398A1

    公开(公告)日：2011-12-29

    申请号：US13114933

    申请日：2011-05-24

    Applicant: Seong Kweon Lee ,  Jueun Song ,  Young Dae Park ,  Sung-Hee Cho

    Inventor： Seong Kweon Lee ,  Jueun Song ,  Young Dae Park ,  Sung-Hee Cho

    IPC: A61K8/11 ,  A61Q19/00 ,  A61Q19/02 ,  A61K8/97

    CPC classification number: A61K8/97 ,  A61K2800/522 ,  A61K2800/85 ,  A61Q19/00 ,  A61Q19/02

    Abstract: The present invention relates to a cosmetic composition comprising a composite prepared by molecularly encapsulating a fermented sumac (Rhus javanica L.) extract with a cyclodextrin derivative as an active ingredient. More particularly, the present invention relates to a skin-whitening or antioxidant composition comprising a composite prepared by molecularly encapsulating a fermented sumac (Rhus javanica L.) extract with hydroxypropyl-β-cyclodextrin as an active ingredient. The composition of the present invention exhibits better skin-whitening and antioxidant effect than the existing cosmetic composition comprising 4-n-butylresorcinol, while having better stability. Further, since it is originated from natural materials with much less skin irritation, it can be effectively used to prepare functional skin-whitening and antioxidant cosmetic products.

    Abstract translation: 本发明涉及一种化妆品组合物，其包含通过以环糊精衍生物作为活性成分分解封装发酵的漆树（罗汉尼卡）提取物而制备的复合物。 更具体地说，本发明涉及一种皮肤增白剂或抗氧化剂组合物，其包含通过以羟丙基-β-环糊精作为活性成分将发酵的漆树胶（Rhus javanica L.）提取物分子包封制备的复合物。 与现有的包含4-正丁基间苯二酚的化妆品组合物相比，本发明的组合物具有更好的皮肤美白和抗氧化作用，同时具有更好的稳定性。 此外，由于其起源于具有少许皮肤刺激性的天然材料，因此可有效地用于制备功能性美白和抗氧化的化妆品。

    METHOD FOR PREPARING HIGH PURITY GINSENOSIDE RD USING LACTOBACILLUS CASEI AND COSMETIC COMPOSITION FOR ANTI-WRINKLE COMPRISING THE HIGH PURITY GINSENOSIDE RD
    28.
    发明申请
    METHOD FOR PREPARING HIGH PURITY GINSENOSIDE RD USING LACTOBACILLUS CASEI AND COSMETIC COMPOSITION FOR ANTI-WRINKLE COMPRISING THE HIGH PURITY GINSENOSIDE RD 审中-公开
    使用乳酸杆菌和化妆品组合物制备高纯度甘氨酸RD的方法，用于包含高纯度茚三酮RD的抗皱

    公开(公告)号：US20110318397A1

    公开(公告)日：2011-12-29

    申请号：US13114904

    申请日：2011-05-24

    Applicant: Seong Kweon Lee ,  Jueun Song ,  Young Dae Park ,  Sung-Hee Cho

    Inventor： Seong Kweon Lee ,  Jueun Song ,  Young Dae Park ,  Sung-Hee Cho

    IPC: A61K8/63 ,  C07J17/00 ,  A61Q19/00 ,  C12P33/20

    CPC classification number: A61K8/63 ,  A61K8/97 ,  A61K8/99 ,  A61Q19/08 ,  C07J9/00 ,  C07J17/005

    Abstract: The present invention relates to a method for preparing high-purity ginsenoside Rd using Lactobacillus casei, more particularly to a method for preparing high-purity ginsenoside Rd using Lactobacillus casei and an anti-wrinkle cosmetic composition comprising the high-purity ginsenoside Rd as an active ingredient. Since the method of the present invention is simple and can economically prepare high-purity ginsenoside Rd extract, it may make the best use of anti-wrinkle effect of the ginsenoside Rd. In addition, the present invention can increase stability and decrease skin irritation by preparing water-soluble molecular capsule of high-purity ginsenoside Rd, thereby having advantage of increasing applicability ginsenoside Rd radically.

    Abstract translation: 本发明涉及使用干酪乳杆菌制备高纯度人参皂苷Rd的方法，更具体地涉及使用干酪乳杆菌制备高纯度人参皂苷Rd的方法和包含高纯度人参皂甙Rd作为活性物质的抗皱化妆品组合物 成分。 由于本发明的方法简单，并且可以经济地制备高纯度人参皂苷Rd提取物，可以最好地利用人参皂苷Rd的抗皱作用。 此外，通过制备高纯度人参皂苷Rd的水溶性分子胶囊，本发明可以提高稳定性并减少皮肤刺激，从而具有从根本上增加适用性人参皂苷Rd的优点。

Patent Agency Ranking