PHOTORESIST COMPOSITION
    21.
    发明专利

    公开(公告)号:JPH01300250A

    公开(公告)日:1989-12-04

    申请号:JP13007588

    申请日:1988-05-30

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve the sensitivity of the title composition at the time of using the composition for lithography, and the allowability of the composition against an alkaline development condition at the time of developing it by incorporating an alkali soluble resin having silyl ether group, a specified photosensitive agent and a compd. capable of generating an acid by irradiating active rays in the composition. CONSTITUTION:The composition is composed of the alkali-soluble resin having the silyl ether group, the photosensitive agent shown by formula I and the compd. capable of generating the acid by irradiating the active rays. In formula I, R1 and R2 are each hydrogen atom or alkyl group, etc., R3 is alkyl or alkenyl group, etc., R4 and R5 are each hydrogen atom or nitrogen group, etc., And, the alkali-soluble resin is released a SiO bond in the presence of the acid, and formed a hydroxyl group. As the result, the solubility of the resin for an alkaline aqueous solution increases. Thus, the composition has the high sensitivity for the lithography using a deep UV ray and an excimer laser as a light source, and the excellent allowability against the alkali development.

    PHOTORESIST COMPOSITION
    22.
    发明专利

    公开(公告)号:JPH01300249A

    公开(公告)日:1989-12-04

    申请号:JP13007488

    申请日:1988-05-30

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve the sensitivity of the title composition at the time of using the composition for lithography, and the allowability of the composition against an alkaline development condition at the time of developing it by incorporating an alkali soluble resin having silyl ether group, a specified diazohomotetramic acid derivative and a compd. capable of generating an acid by irradiating active rays in the composition. CONSTITUTION:The composition is composed of the alkali-soluble resin having the silyl ether group, the diazohomotetramic acid derivative shown by formula I and the compd. capable of generating the acid by irradiating the active rays. In formula I, R1 is a n-valent org. group, (n) is an integer of 1-6. And, the alkali-soluble resin is released a SiO bond in the presence of the acid, and formed a hydroxyl group. As the result, the solubility of the resin for an alkaline aqueous solution increases. And, the diazohomotetramic acid derivative acts as a retarding agent fore the alkali solubility of the composition. Thus, the composition has the high sensitivity for the lithography using a deep UV ray and an excimer laser as a light source, and the excellent allowability against the alkali development.

    DEVICE FOR PRODUCING PEROXIDE
    23.
    发明专利

    公开(公告)号:JPS6442590A

    公开(公告)日:1989-02-14

    申请号:JP19777587

    申请日:1987-08-07

    Abstract: PURPOSE:To remarkably lower an electric resistance and to improve productivity by fixing a cation-exchange membrane to one side of an anode on the cathode side, and bringing the other side of the anode into contact with water. CONSTITUTION:Oxygen is electrochemically reduced on the surface of the cathode 25 in an electrolytic cell provided with the cation-exchange membrane 23 to form HO2 , and a peroxide expressed by MHO2 is produced (M is an alkali metal or hydrogen). In this production device, the cation-exchange membrane is fixed to one side of the anode 21 on the cathode 25 side, and the other side of the anode 21 is brought into contact with water 27, namely, the water 27, anode 21, cation-exchange membrane 23, aq. alkaline soln. 24, cathode 25 consisting of a gas diffuser electrode, and oxygen 26 are successively arranged in the electrolytic cell, and a mixture of the hydrogen peroxide of an alkali metal and hydrogen peroxide is produced by using the cell. By this method, the cell voltage is remarkably lowered, and the current density can be increased.

    HALOGEN-CONTAINING POLYACRYLIC ESTER DERIVATIVE

    公开(公告)号:JPS63234006A

    公开(公告)日:1988-09-29

    申请号:JP30770186

    申请日:1986-12-25

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To provide the titled novel ester derivative containing halogen and benzene ring, easy to cause main chain degradation reaction by electron beam or X-ray irradiation, useful as a resist material improved in dry-etching resistance. CONSTITUTION:The objective novel ester derivative of formula I [A is constituent derived from a monomer having copolymerizable double bond; R is group of formula II or III (R1 and R2 are each H or fluorine-substituted methyl; but not H simultaneously; R3 is H or lower alkyl); X is halogen or CH3; m is positive integer; n is 0 or positive integer, n/m being 0-2]. This ester derivative can be prepared by polymerization, e.g., of the corresponding acrylic ester monomer (e.g., alpha-chloroacrylic acid 1-phenyl-2,2,2-trifluoroethyl ester).

    FORMATION OF RESIST PATTERN
    25.
    发明专利

    公开(公告)号:JPS63158541A

    公开(公告)日:1988-07-01

    申请号:JP30540586

    申请日:1986-12-23

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve the sensitivity, the resolution and the stability of a resist material by using a specific fluorine contg. itaconic acid ester polymer as the resist material. CONSTITUTION:The fluorine contg. itaconic acid ester shown by formula I is used as the resist material. In the formula, A is a structural unit derivated from a monomer having a double bond capable of copolymerizing, R1 is 1-5 C a fluorine substd. alkyl group, R2 is hydrogen atom or a fluorine substd. alkyl group same as that of R1 group, (m) is a positive integer, (n) is 0 or a positive integer, (n/m) is 0-99. Thus, the decomposition reaction of the main chain of the polymer contd. in the resist material is liable to occur by irradiating an electron beam or a X ray, and the solubility of the radiated part is remarkably improved than that of the unradiated part. As said polymer contains >=2 carbonyl groups in the molecule of the polymer, and contains the fluorine atom, the decomposition reaction of the polymer easily occur, thereby increasing the sensitivity of the resist material.

    ELECTROPHORETIC APPARATUS
    26.
    发明专利

    公开(公告)号:JPS6379051A

    公开(公告)日:1988-04-09

    申请号:JP22515586

    申请日:1986-09-24

    Abstract: PURPOSE:To eliminate the generation of a gas of hydrogen, oxygen or the like and pollution of an migration liquid, by providing as anode diaphragm a cation selectively permeating ion exchange film, with a smaller ion exchange capacity or with an anion selectively permeating ion exchange film formed on the anode side. CONSTITUTION:When an anode 5' uses metal Fe with the base potential lower than an oxygen generation potential 5', no oxygen is generated as a current flows in Fe Fe +2e . When a cathode 6' uses AgCl as reduction type elec trode generating no hydrogen and hence, no hydrogen is generated. In an anode diaphragm 7', F2 is blocked and univalent ion such as K and H are allowed to permeate selectively. Then, in a cathode 8', ion component such as K and TEA (triethanolamine) in a migration liquid is allowed to permeate whereas anion Cl as a part of an cathode liquid is allowed to permeate into the migra tion liquid. In the end, an electrode ion dissolved is blocked from permeating into a migration chamber 2 by the ion selectively permeating film thereby preventing pollution of the migration liquid.

    DEVELOPING METHOD FOR POSITIVE TYPE RESIST

    公开(公告)号:JPS6374054A

    公开(公告)日:1988-04-04

    申请号:JP21793186

    申请日:1986-09-18

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve definition in a developing stage for a specific resist mate rial by using a solvent mixture composed of diisobutyl ketone and aliphat. satd. alcohol specified in carbon atoms as a liquid developer. CONSTITUTION:The resist material is an acrylate polymer contg. halogen in the alpha-position, the repeating unit of which is expressed by formula I, and fluo rine and benzene ring in the ester part and is obtd. by polymerizing a monomer. In formula I, X denotes fluorine, chlorine, R1, R2 denote hydrogen, fluorine substd. methyl group (where R1, R2 do not simultaneously take hydrogen), R3 denotes hydrogen, alkyl group of 1-5C, (n) denotes an integer in the sange of 20-20,000. This polymer is dissolved and a uniform film is formed. Develop ment is executed by using the solvent mixture composed of the diisobutyl ketone and the aliphat. satd. alcohol of 1-6C. the definition is thereby improved.

    FLUORINE-CONTAINING POLYMER
    28.
    发明专利

    公开(公告)号:JPS62241906A

    公开(公告)日:1987-10-22

    申请号:JP8417386

    申请日:1986-04-14

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain the titled polymer excellent in dry-etching resistance and useful as a resist material, a water repellent, a stainproof agent or a resin modifier, comprising units each containing a trifluoromethyl group in the alphaposition and a benzene ring in the ester moiety. CONSTITUTION:Potassium alpha-trifluoromethylacrylate is reacted with an alpha- substituted benzyl bromide to obtain an alpha-trifluoromethyl acrylate monomer (e.g., benzyl alpha-trifluoromethylacrylate). This monomer is polymerized at -80-100 deg.C in an organic solvent (e.g., toluene) in the presence of a catalyst (e.g., t-butoxypotassium) to obtain the titled polymer having repeating units each of which has a trifluoromethyl group in the alpha position and a benzene ring in the ester moiety and represented by the formula (wherein R are each H or a lower alkyl and n is 20-20,000).

    PRODUCTION OF PELLICLE
    29.
    发明专利

    公开(公告)号:JPH04369649A

    公开(公告)日:1992-12-22

    申请号:JP17333491

    申请日:1991-06-19

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain a high quality pellicle having no scratch and no stretch and excellent in extension of film by heating a thin film peeled off from a substrate. CONSTITUTION:A frame body is stuck on a fluororesin thin film formed on the substrate before the thin film is peeled off from the substrate and after that the thin film provided on the frame body is heated. In this case, heating temp. is + or -15 deg.C of the glass transition temp. of the fluororesin forming the thin film. To use the fluororesin for the pellicle film, it is preferable to transmit >=90% of >=240nm ultraviolet ray in 10mum film thickness. And since the fluororesin thin film is formed by applying fluororesin dissolved in a solvent on a smooth substrate such as glass, silicone wafer, the fluororesin is necessary to be dissolved in the solvent. Tetrafluoroethylene-vinylidene fluoride copolymer, fluororesin having cyclic ether structure in the main chain is used as the fluororesin. In the result, the high quality pellicle having no scratch and no stretch and excellent in extension of film is obtained.

    PELLICLE WITH ANTIREFLECTION
    30.
    发明专利

    公开(公告)号:JPH049849A

    公开(公告)日:1992-01-14

    申请号:JP11013990

    申请日:1990-04-27

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To prevent the reflection of light and to obtain good productivity by forming an antireflection layer consisting of a specific copolymer on one surface of a transparent thin film consisting of polyvinyl acetal. CONSTITUTION:The antireflection layer consisting of the copolymer of the perfluroalkyl (meth)acrylate monomer expressed by formula I and the hydroxyalkyl (meth)acrylate monomer which is expressed by formula II and has plural OH groups at the terminal or side chain formed on at least one surface of the transparent thin film consisting of the polyvinyl acetal. In the formula I, R denotes H or methyl group; R denotes the group expressed by (CH2)m(CF2)nF, where me, n respectively denote m=1 to 2, n=3 to 14 integers. In the formula II, R denotes H or methyl group; R denotes 3 to 5C alkyl group having 2 to 3 pieces of OH groups at the terminal or side chain. The antireflection layer maintains a low refractive index in this way and the expos ing time is shortened. The production efficiency is thus improved.

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