PRODUCTION OF PELLICLE FILM
    1.
    发明专利

    公开(公告)号:JPH04369650A

    公开(公告)日:1992-12-22

    申请号:JP17333591

    申请日:1991-06-19

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain a high quality pellicle film without generating scratch or stretch by allowing a solvent to remain in a thin film when peeling off the thin film from a substrate. CONSTITUTION:After a frame body is stuck on a fluororesin thin film formed on a substrate, the thin film remaining a solvent is peeled off from the substrate. In this case, the residual amount of solvent in the thin film is 5-30wt.%. An order to use fluororesin as the pellicle film, it is preferable to transmit >=90% of >=240nm ultraviolet ray in 10mum film thickness. Since the fluororesin thin film is formed by applying fluororesin dissolved in the solvent on a smooth substrate such as glass, silicone wafer, the fluororesin used for this is necessary to dissolve in the solvent. A copolymer containing vinylidene fluoride or the like is used as the fluororesin. In the result, the high quality fluororesin pellicle film without generating scratch or stretch when peeling off from the substrate is obtained.

    PELLICLE FILM
    2.
    发明专利

    公开(公告)号:JPH0490546A

    公开(公告)日:1992-03-24

    申请号:JP20497790

    申请日:1990-08-03

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain the pellicle film which does not generate electrification and does not pick up dust at the time of production of the pellicle, transportation and mask mounting by forming a copolymer of a specific alkyl acrylate monomer on the surface of a transparent thin film consisting of polyvinyl acetal. CONSTITUTION:An antireflection layer consisting of the copolymer of the fluorine-contg. alkyl (meth)acrylate monomer expressed by formula I and the hydroxyl group-contg. alkyl (meth)acrylate monomer expressed by formula II and the copd. expressed by formula III is formed on at least one surface of the transparent thin film consisting of the polyvinyl acetal. In the formulas, R denotes H or methyl group; R denotes a fluorine-contg. alkyl group and denotes the group expressed by (CH2)m(CF2)nF, where (m), (n) respectively denote an integer between 1 and 2, 3 and 14. R denotes H or methyl group; R denotes 2 to 4C alkyl group having an OH group at the terminal or side chain; (a), (b), (c) denote integer >=1.

    PELLICLE FILM WITH ANTIREFLECTION

    公开(公告)号:JPH049851A

    公开(公告)日:1992-01-14

    申请号:JP11014190

    申请日:1990-04-27

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To prevent the reflection of light and to obtain good productivity by forming an antireflection layer consisting of a specific copolymer on one surface of a transparent thin film consisting of polyvinyl acetal. CONSTITUTION:The antireflection layer consisting of the copolymer of the fluorine-contg. alkyl (meth)acrylate expressed by formula I and the hydroxperfluoroalkyl (meth)acrylate which is expressed by formula II and has plural OH groups at the terminal or side chain is formed on at least one surface of the transparent thin film consisting of the polyvinyl acetal. In the formula I, R denotes H or methyl group; R denotes the group expressed by (CH2)m(CF2)nF, where m, n respectively denote m=1 to 2, n=3 to 14 integers. In the formula II, R denotes H or methyl group; R denotes 4 to 12 C fluorine- contg. alkyl group having the OH groups at the terminal or side chain. The antireflection layer maintains a low refractive index in this way and the exposing time is shortened. The production efficiency is thus improved.

    PELLICLE WITH ANTIREFLECTION
    4.
    发明专利

    公开(公告)号:JPH049848A

    公开(公告)日:1992-01-14

    申请号:JP11013890

    申请日:1990-04-27

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To prevent the reflection of light and to obtain good productivity by forming an antireflection layer consisting of a specific copolymer on one surface of a transparent thin film consisting of polyvinyl acetal. CONSTITUTION:The antireflection layer consisting of the copolymer of the perfluoroalkyl (meth)acrylate monomer expressed by formula I and the 3, 4- epoxy (meth)acryloyeoxytricyclo[5.2.1.0 ] decane expressed by formula II is formed on at least one surface of the transparent thin film consisting of the polyvinyl acetal. In the formula I, R denotes H or methyl group; R denotes the group expressed by (CH2)m(CF2)nF, where m, n respectively denote m=1 to 2, n=3 to 14 integers. In the formula II, R denotes H or methyl group. The antireflection layer maintains a low refractive index in this way and the exposing time in a semiconductor exposing and processing stage is shortened. The production efficiency is thus improved.

    NEGATIVE TYPE PHOTORESIST COMPOSITION

    公开(公告)号:JPH03233455A

    公开(公告)日:1991-10-17

    申请号:JP2856590

    申请日:1990-02-09

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To make improvement in transparency to UV light and far UV light and definition by incorporating an alkali-soluble resin contg. an arom. group, and ammonia salt having the reactive group and a compd. having a photoreactive group or reactive group as essential components into the above compsn. CONSTITUTION:An alkyl compd. of 5 to 30C contg. >=1 azide groups or an alkyl compd. of 5 to 30C contg. >=1 epoxy group or double bonds and the alkali-soluble resin contg. the arom. group are incorporated as the essential components into this compsn. The dissolution inhibiting ability of the ammonium salt depends on the structure of this salt; the dissolution inhibiting ability is high as the chain length of the alkyl group is longer, i.e. as the number of the carbon atoms is larger. The dissolution inhibiting ability is higher as the number of the long chain alkyl groups is larger. Further, exposed parts are made insoluble in an alkaline developing soln. by convering the short chain alkyl ammonium salt to a long-chain alkyl ammonium salt by exposing in the case of the short chain of the alkyl group of the alkyl ammonium salt. Unexposed parts are not changed in the solubility and patterning is possible. The improvement in the transparency to the UV light and far UV light and the definition is made in this way.

    PHOTOSENSITIVE RESIN
    6.
    发明专利

    公开(公告)号:JPH03134668A

    公开(公告)日:1991-06-07

    申请号:JP27151589

    申请日:1989-10-20

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain the positive type pattern forming material having a high resolution by forming the photosensitive resin of a maleic anhydride part of a copolymer of a compd. contg. alicyclic aliphat. hydrocarbon skeleton and maleic anhydride and denaturing the resin with alcohol contg. the cyclic diazo photosensitive group expressed by specific formula and amine. CONSTITUTION:The maleic anhydride part of th copolymer of the compd. contg. the alicyclic aliphat. hydrocarbon skeleton and th maleic anhydride is denatured with the alcohol contg. the cyclic diazo photosensitive group expressed by the formula I and the amine expressed by formula II. In the formula I, II, n is 1 to 10 integer; R is 1 to 6C alkyl group. The photosensitive resin formed in such a manner is soluble in an org. solvent and is subjected to practicable use in the form of a resist solvent at the time of using the resin for formation of ICs. The resin is dissolved in a solvent at 1 to 50wt.% ratio and the soln. is applied on a substrate consisting of Si, Al, etc.; thereafter, the solvent is evaporated and the uniform and smooth coated film is obtd. Acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, etc., are used as the solvent.

    PHOTOSENSITIVE RESIN
    7.
    发明专利

    公开(公告)号:JPH0369957A

    公开(公告)日:1991-03-26

    申请号:JP20557289

    申请日:1989-08-10

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To obtain a positive type pattern forming material having high resolution by modifying the maleic anhydride moiety of a copolymer contg. an alicyclic hydrocarbon skeleton with alcohol contg. a prescribed photosensitive diazo group and a prescribed amine. CONSTITUTION:The maleic anhydride moiety of a copolymer of a compd. contg. an alicyclic hydrocarbon skeleton with maleic anhydride is modified with alcohol contg. a photosensitive diazo group represented by formula I (wherein n is an integer of 1-10) and an amine represented by formula II (where R is 1-6C alkyl). Since the resulting photosensitive resin contains photosensitive groups having high sensitivity in the wavelength region of far UV or excimer laser light but does not contain arom. rings intensely absorbing light in the region, the resin has high transparency after exposure. Though the resin is insoluble in an aq. alkali soln., the photosensitive groups are decomposed by exposure to produce carboxylic acid and alkali development is enabled. The resin does not swell at the time of development, has high accuracy and can form a superfine resist pattern.

    POSITIVE TYPE PHOTORESIST COMPOSITION

    公开(公告)号:JPH02287356A

    公开(公告)日:1990-11-27

    申请号:JP10737189

    申请日:1989-04-28

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve sensitivity, definition and contrast by incorporating a specific photosensitive solubilization restrainer and alkaline soluble resin into the positive type photoresist compsn. CONSTITUTION:The compd. expressed by formula I is used for the photosensitive solubilization restrainer of the positive type photoresist compsn. formed by containing the alkaline soluble resin and the photosensitive solubilization restrain er which deactivates the restraining effect when is irradiated with light of about 248nm. In the formula I, R to R denote hydrogen or a cyclic group having >=1 groups expressed by formula II or group having a straight chain group; there is no case in which R to R are simultaneously the hydrogen. This group forms ketene by causing a photodenaturation after strongly absorb ing the light of about 248nm and since the ketene is easily denatured to a carboxyl group, the compd. having this group is made soluble in alkali by exposing. The excellent sensitivity, definition and contrast of patterns are obtd. in this way.

    PHOTORESIST COMPOSITION
    9.
    发明专利

    公开(公告)号:JPH02253262A

    公开(公告)日:1990-10-12

    申请号:JP7399489

    申请日:1989-03-28

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To provide a photoresist composition superior in developability, film enduring rate, and the like by using a combination of a binary copolymer of p- and m-hydroxystyrene derivatives as an alkali-soluble resin and a photosensitive agent. CONSTITUTION:The photoresist composition to be used comprises the photosensitive agent and a solvent and the alkali-soluble binary copolymer of p- and m-hydroxy styrene derivatives, such as hydroxystyrene of hydroxy-alpha- methylstyrene represented by general formula I, prepared from a mixture of a 95 - 75 p-isomer and a 5 - 25% m-isomer. When the p-isomer is below 75%, the alkali-solubility in an alkaline developing solution is lowered and development becomes difficult, and when it is over 95%, solubility is also lowered.

    NEGATIVE TYPE PHOTORESIST COMPOSITION

    公开(公告)号:JPH01297645A

    公开(公告)日:1989-11-30

    申请号:JP12702488

    申请日:1988-05-26

    Applicant: TOSOH CORP

    Abstract: PURPOSE:To improve the transparent degree of the title composition at wavelength regions of a deep UV ray and an excimer laser and the alkaline development allowability of the composition by incorporating a copolymer which is introduced a group having an active carbon-carbon double bond against the deep UV ray and the excimer laser into the side chain of phenol contd. in a polyvinyl phenol, in the composition. CONSTITUTION:The copolymer contains constituting units shown by formulas I and II in a ratio of satisfying the formula 0.1

Patent Agency Ranking