公开(公告)号：US11717227B2

公开(公告)日：2023-08-08

申请号：US16751110

申请日：2020-01-23

Applicant: Tsinghua University

Inventor： Xinyi Li ,  Huaqiang Wu ,  He Qian ,  Bin Gao

IPC: G11C13/00 ,  A61B5/00 ,  A61B5/316 ,  A61B5/374 ,  A61B5/389

CPC classification number: A61B5/7207 ,  A61B5/316 ,  A61B5/374 ,  A61B5/389 ,  G11C13/0026 ,  G11C13/0028 ,  G11C2213/77

Abstract: A signal processing device and a signal processing method. The signal processing device includes a receiver, a memristor array and a classifier. The receiver is configured to receive a first signal. The memristor array includes a plurality of memristor units, each of the plurality of memristor units includes a memristor, and the memristor array is configured to apply the first signal that has been received to at least one memristor unit of the plurality of memristor units and output a second signal based on a memristor resistance value distribution of the memristor array. The classifier is configured to classify the second signal outputted from the memristor array to obtain a type of the first signal.

公开(公告)号：US10804465B2

公开(公告)日：2020-10-13

申请号：US16123234

申请日：2018-09-06

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Wei Wu ,  Bin Gao ,  He Qian

IPC: H01L45/00

Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.

公开(公告)号：US20200175379A1

公开(公告)日：2020-06-04

申请号：US16699727

申请日：2019-12-01

Applicant: Tsinghua University

Inventor： Huaqiang Wu ,  Bin Gao ,  Yudeng Lin ,  He Qian

IPC: G06N3/08 ,  G06N3/06 ,  G06N3/04

Abstract: A generative adversarial network device and a training method thereof. The generative adversarial network device includes a generator and a discriminator. The generator is configured to generate a first sample according to an input data; the discriminator is coupled to the generator, and is configured to receive the first sample and be trained based on the first sample; the generator includes a first memristor array serving as a first weight array. The generative adversarial network device can omit a process of adding noise to fake samples generated by the generator, thereby saving training time, reducing resource consumption and improving training speed of the generative adversarial network.

公开(公告)号：US20180330788A1

公开(公告)日：2018-11-15

申请号：US15776520

申请日：2016-12-22

Applicant: Tsinghua University

Inventor： Chen Wang ,  Huaqiang Wu ,  He Qian ,  Bin Gao

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0064 ,  G11C2013/0092 ,  G11C2213/79 ,  G11C2213/82

Abstract: An operation method of a resistance random access memory and a resistance random access memory apparatus are provided. The method includes: applying an initial reset voltage to a storage unit; carrying out a read check operation to acquire a resistance value of the storage unit; judging whether the resistance value of the storage unit reaches a preset target resistance value in a high resistance state; if the resistance value of the storage unit is less than the preset target resistance value in the high resistance state, applying a set voltage to the storage unit to set the storage unit to a preset target resistance value in a low resistance state, then applying a reset voltage of which an amount is increased to the storage unit, and repeating the read check operation and the subsequent steps until the storage unit reaches the preset target resistance value in the high resistance state.