公开(公告)号：US11704328B2

公开(公告)日：2023-07-18

申请号：US16769151

申请日：2018-12-20

Applicant: TSINGHUA UNIVERSITY ,  Timecho AI Technology Co. Ltd

Inventor： Jianmin Wang ,  Xiangdong Huang ,  Chen Wang ,  Jialin Qiao ,  Tian Jiang ,  Mingsheng Long ,  Jiaguang Sun

IPC: G06F16/00 ,  G06F16/2458 ,  G06F16/22 ,  G06F16/248

CPC classification number: G06F16/2474 ,  G06F16/221 ,  G06F16/248 ,  G06F16/2477

Abstract: A columnar storage method and a query method and system for time series data. The storage method includes: dividing a column of time series data into a plurality of pages, wherein each page stores a part of data points of the column of time series data and the sum of the data points stored in all the pages is all the data points in the column of time series data (S1); and setting two parts, i.e., a page header and a page body, for each page, storing summary index information of all the data points in the page in the page header of the page and storing data value information of all the data points in the page in the page body of the page (S2).

公开(公告)号：US10475512B2

公开(公告)日：2019-11-12

申请号：US15776520

申请日：2016-12-22

Applicant: Tsinghua University

Inventor： Chen Wang ,  Huaqiang Wu ,  He Qian ,  Bin Gao

IPC: G11C11/00 ,  G11C13/00

Abstract: An operation method of a resistance random access memory and a resistance random access memory apparatus are provided. The method includes: applying an initial reset voltage to a storage unit; carrying out a read check operation to acquire a resistance value of the storage unit; judging whether the resistance value of the storage unit reaches a preset target resistance value in a high resistance state; if the resistance value of the storage unit is less than the preset target resistance value in the high resistance state, applying a set voltage to the storage unit to set the storage unit to a preset target resistance value in a low resistance state, then applying a reset voltage of which an amount is increased to the storage unit, and repeating the read check operation and the subsequent steps until the storage unit reaches the preset target resistance value in the high resistance state.

公开(公告)号：US20250020595A1

公开(公告)日：2025-01-16

申请号：US18897514

申请日：2024-09-26

Applicant: Tsinghua University

Inventor： Chen Wang ,  Simian Zhang ,  Yuqi Wang ,  Xiaonan Deng ,  Yifei Wu ,  Zhengcao Li

IPC: G01N21/65

Abstract: The present disclosure relates to a non-destructive in-situ measurement device and method based on Raman analysis. The device comprises: a laser light source that emits a laser beam; a focusing component that focuses the laser beam above a movable sample stage, with the focal plane of the focusing component positioned at an initial position. During measurement, the focal plane is controlled to move from the initial position to the surface, side, or bottom of the structure under test. The movable sample stage holds the sample to be measured and can move in a plane perpendicular and/or parallel to the optical axis. The axis of the structure under test is parallel to the optical axis and located within the laser beam's focal region. A detection module collects specific Raman scattering signals returned from the sample under test, and the structure's planar and three-dimensional parameters are determined based on the collected results.

公开(公告)号：US20180330788A1

公开(公告)日：2018-11-15

申请号：US15776520

申请日：2016-12-22

Applicant: Tsinghua University

Inventor： Chen Wang ,  Huaqiang Wu ,  He Qian ,  Bin Gao

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0064 ,  G11C2013/0092 ,  G11C2213/79 ,  G11C2213/82

Abstract: An operation method of a resistance random access memory and a resistance random access memory apparatus are provided. The method includes: applying an initial reset voltage to a storage unit; carrying out a read check operation to acquire a resistance value of the storage unit; judging whether the resistance value of the storage unit reaches a preset target resistance value in a high resistance state; if the resistance value of the storage unit is less than the preset target resistance value in the high resistance state, applying a set voltage to the storage unit to set the storage unit to a preset target resistance value in a low resistance state, then applying a reset voltage of which an amount is increased to the storage unit, and repeating the read check operation and the subsequent steps until the storage unit reaches the preset target resistance value in the high resistance state.

公开(公告)号：US11101818B2

公开(公告)日：2021-08-24

申请号：US16769913

申请日：2018-12-12

Applicant: TSINGHUA UNIVERSITY

Inventor： Jianmin Wang ,  Xiangdong Huang ,  Jialin Qiao ,  Chen Wang ,  Mingsheng Long

IPC: H03M7/40 ,  H03M7/30

Abstract: Provided are a method and device for storing time series data with adaptive length encoding, including: acquiring data values corresponding to timestamps according to a sequential order of timestamps; using a ratio of storage space values required to pre-store the previous n data values to storage space values required to pre-store rule information of a preset encoding rule and encoding data according to the previous n data values as a storage gain corresponding to the time at which the n-th data value is acquired; storing the rule information of the preset encoding rule and the encoding data corresponding to a previous n−1 data values when the storage gain corresponding to the time at which the n-th data value is acquired is less than that corresponding to the time at which the (n−1)-th data value is acquired.

公开(公告)号：US20250054851A1

公开(公告)日：2025-02-13

申请号：US18930233

申请日：2024-10-29

Applicant: Tsinghua University

Inventor： Chen Wang ,  Simian Zhang ,  Xiaonan Deng ,  Shengxian Ke ,  Yifei Wu ,  Zhengcao Li

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

Abstract: The present disclosure relates to a multi-mode sensor based on wafer-level packaging and its manufacturing method. The sensor comprises a base for 3D packaging, a multi-mode sensor body, a cap layer, and multiple packaging structures. The base consists of a first substrate, a dielectric layer, a first insulating layer, and multiple through silicon vias (TSVs). The cap layer comprises a second substrate and a bonding ring, where the first surface of the second substrate is provided with a cavity for housing at least part of the multi-mode sensor body. This disclosure has the advantages of high integration, high performance, low cost, miniaturization, high reliability, process feasibility and compatibility, as well as high wafer-level uniformity, making it suitable for a wide range of applications.

公开(公告)号：US11467754B2

公开(公告)日：2022-10-11

申请号：US16959897

申请日：2018-12-26

Applicant: TSINGHUA UNIVERSITY ,  Timecho AI Technology Co. Ltd

Inventor： Jianmin Wang ,  Xiangdong Huang ,  Chen Wang ,  Jinrui Zhang ,  Jiaguang Sun

IPC: G06F3/06 ,  G06F16/22 ,  G06F16/901

Abstract: Provided are a capacity expansion method and a capacity expansion system based on a dual-level list structure; a first level list of the dual-level list structure is a first-level array in which at least one array identifier is stored; a second level list of the dual-level list structure includes at least one second-level array, each second-level array stores data to be stored and corresponds to only one array identifier; the method includes: creating a new first-level array when an amount of data stored in the second-level array corresponding to each array identifier reaches a maximum value, a size of a new first-level array being greater than that of a current first-level array, and increasing a number of the second-level arrays; and copying the array identifier stored in the current first-level array to the new first-level array, and replacing the current first-level array with the new first-level array.