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公开(公告)号：JP2001111172A
公开(公告)日：2001-04-20
申请号：JP2000287812
申请日：2000-09-22
Applicant: XEROX CORP
Inventor： BOUR DAVID P , KNEISSL MICHAEL A , ROMANO LINDA T , PAOLI THOMAS L , VAN DE WALLE CHRISTIAN G
Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. SOLUTION: The index guide type buried heterostructure nitride laser structure 100 has a ridge structure 111 having first, second and third faces, clad structures 121, 125 and a multiple quantum well structure 145 interposed between the clad structures 121, 125, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111 and having an opening for electrical contact to the third face of the ridge structure 111.
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公开(公告)号：JP2014207476A
公开(公告)日：2014-10-30
申请号：JP2014138631
申请日：2014-07-04
Inventor： KNEISSL MICHAEL A , KIESEL PETER , VAN DE WALLE CHRISTIAN G
CPC classification number: B82Y20/00 , H01S5/0421 , H01S5/3095 , H01S5/34333
Abstract: 【課題】 p型半導体層の数を減らした窒化物系半導体レーザ構造体の提供。【解決手段】 p型半導体層216とn型半導体層218との間のp−nトンネル接合220は、エッジ発光型窒化物系半導体レーザ構造200のための電流注入を提供する。このp−nトンネル接合220により、窒化物系半導体レーザ構造200におけるp型半導体層の数が減り、それによって分散損失が低減され、閾値電流密度が低下し、全体的な直列抵抗が低下すると共に、より高い成長温度が可能となることによってレーザの構造的な品質が向上する。【選択図】図1
Abstract translation: 要解决的问题：提供具有减少数量的p型半导体层的氮化物基半导体激光器结构。解决方案：p型半导体层216和n型半导体层218之间的pn隧道结220提供电流注入 用于边缘发射氮化物基半导体激光器结构200.pn隧道结220减少氮化物基半导体激光器结构200中的p型半导体层的数量，这降低了分布损耗，降低了阈值电流密度，降低了整体 串联电阻，并通过允许更高的生长温度来提高激光器的结构质量。
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公开(公告)号：JP2003198045A
公开(公告)日：2003-07-11
申请号：JP2002371704
申请日：2002-12-24
Applicant: XEROX CORP
Inventor： KNEISSL MICHAEL A , KIESEL PETER , VAN DE WALLE CHRISTIAN G
Abstract: PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser structure where the number of p-type semiconductor layers is reduced. SOLUTION: A p-n tunnel junction 220 between a p-type semiconductor layer 216 and an n-type semiconductor layer 218 provides current injection for an edge light emitting nitride-based semiconductor laser structure 200. By the p-n tunnel junction 220, the number of p-type semiconductor layers in the nitride- based semiconductor laser structure is reduced. As a result, dispersion loss is reduced, threshold current density decreases, entire series resistance lowers, at the same time, a higher growth temperature is enabled, and the structural quality of a laser is improved. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003158342A
公开(公告)日：2003-05-30
申请号：JP2002330348
申请日：2002-11-14
Applicant: XEROX CORP
Inventor： NORTHRUP JOHN E , KNEISSL MICHAEL A
Abstract: PROBLEM TO BE SOLVED: To provide a dual III-V nitride laser structure in which thermal crosstalk is reduced. SOLUTION: This dual semiconductor laser structure is provided with a substrate 102, III-V nitride semiconductor current diffusion layers 202, 302 formed on the substrate, and a plurality of III-V nitride semiconductor layers formed on the current diffusion layers. At least one out of the plurality of III-V nitride semiconductor layers is provided with III-V nitride semiconductor layers 206, 306 forming active layers, and a trench 116 which penetrates the plurality of III-V nitride semiconductor layers, is stretched penetrating a part of the current diffusion layers and forms a first laser 200 and a second laser 300 from the plurality of III-V nitride semiconductor layers. Thermal crosstalk between the first and the second lasers is reduced by depth of the trench and thickness of the current diffusion layers.
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公开(公告)号：JP2001111171A
公开(公告)日：2001-04-20
申请号：JP2000287811
申请日：2000-09-22
Applicant: XEROX CORP
Inventor： BOUR DAVID P , KNEISSL MICHAEL A , ROMANO LINDA T , PAOLI THOMAS L , VAN DE WALLE CHRISTIAN G
Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. SOLUTION: The index guide type heterostructure nitride laser structure 100 has a first waveguide layer, a second waveguide layer, a multiple quantum well structure 145 interposed between the first and second waveguide layers, a ridge structure 111 having first, second and third faces, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111.
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Patent Agency Ranking
公开(公告)号：JP2010251804A
公开(公告)日：2010-11-04
申请号：JP2010174425
申请日：2010-08-03
Applicant: Xerox Corp , ゼロックス コーポレイションXerox Corporation
Inventor： KNEISSL MICHAEL A , KIESEL PETER , VAN DE WALLE CHRISTIAN G
CPC classification number: B82Y20/00 , H01S5/0421 , H01S5/3095 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a nitride based semiconductor laser structure which is decreased in number of p-type semiconductor layers.
SOLUTION: A p-n tunnel junction 220 between a p-type semiconductor layer 216 and an n-type semiconductor layer 218 provides current injection for an edge-emitting nitride based semiconductor laser structure 200. The number of p-type semiconductor layers in the nitride based semiconductor laser structure 200 is decreased by the p-n tunnel junction 220 to reduce dispersion loss, threshold current density thereby decreases to lower total series resistance, and higher growth temperature is obtained to improve structural quality of a laser.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供减少p型半导体层数量的氮化物基半导体激光器结构。 解决方案：p型半导体层216和n型半导体层218之间的pn隧道结220为边缘发射氮化物基半导体激光器结构200提供电流注入.P型半导体层的数量 通过pn隧道结220减少氮化物基半导体激光器结构200以减小色散损耗，从而降低阈值电流密度以降低总串联电阻，并且获得更高的生长温度以改善激光器的结构质量。 版权所有（C）2011，JPO＆INPIT
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27.发明专利
公开(公告)号：JP2010183120A
公开(公告)日：2010-08-19
申请号：JP2010120214
申请日：2010-05-26
Applicant: Xerox Corp , ゼロックス コーポレイションXerox Corporation
Inventor： HOFSTETTER DANIEL , DUNNROWICZ CLARENCE J , SUN DECAI , BRINGANS ROSS D , KNEISSL MICHAEL A
CPC classification number: B82Y20/00 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/343 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4043 , H01S5/4087
Abstract: PROBLEM TO BE SOLVED: To provide a monolithic multiple laser structure which has the capability of emitting a multiple wavelength laser beam of close intervals in a wide wavelength spectrum range from infrared to red and blue wavelengths.
SOLUTION: A red/infrared parallel type laser structure 100 is bonded to a blue laser structure 200 with solder bumps 402, 404 by flip-chip bonding to form a red/blue/infrared integrated laser structure 400 integrated by a hybrid method. The method allows a laser array structure having laser elements of different wavelengths to be manufactured, even in a semiconductor materials which are not suitable for a manufacturing method based on etching and regrowth.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种单片多重激光器结构，其具有在从红外到红色和蓝色波长的宽波长光谱范围内发射紧密间隔的多波长激光束的能力。 解决方案：红/红外并联型激光器结构100通过倒装芯片接合结合到具有焊料凸块402,404的蓝色激光器结构200，以形成通过混合方法集成的红/蓝/红外一体化激光器结构400 。 该方法允许制造具有不同波长的激光元件的激光阵列结构，即使在不适合基于蚀刻和再生长的制造方法的半导体材料中。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2004289157A
公开(公告)日：2004-10-14
申请号：JP2004079581
申请日：2004-03-19
Applicant: Xerox Corp , ゼロックス コーポレイションXerox Corporation
Inventor： KNEISSL MICHAEL A , LINDA T ROMANO , VAN DE WALLE CHRISTIAN G
IPC: H01S5/343 , H01S3/03 , H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323 , H01S5/34
CPC classification number: B82Y20/00 , H01S5/2004 , H01S5/22 , H01S5/3214 , H01S5/343 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a laser diode structure where an enhanced coefficient of transverse optical confinement and a low series resistance are realized, and whose absorption loss due to a p-electrode can be controlled.
SOLUTION: An InGaN laser diode structure 100 is equipped with an upper waveguide layer 170 above an MQW(multi-quantum well) region 150, and above this, is equipped with an upper cladding structure 180 composed of a metal oxide of ITO(indum tin oxide). An SiO
2 isolation structure 185, whose refractive index is lower than that of the ITO clad structure 180, is formed so as to face each other, sandwiching the ITO upper cladding structure 180.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种激光二极管结构，其中实现了增强的横向光限制系数和低串联电阻，并且其可以控制由p电极引起的吸收损耗。 解决方案：InGaN激光二极管结构100在MQW（多量子阱）区域150上方设置有上波导层170，并且在其上方配备有由ITO的金属氧化物构成的上包层结构180 （氧化锡）。 折射率低于ITO包层结构180的SiO
2 隔离结构185形成为彼此面对，夹持ITO上包层结构180.版权所有： （C）2005，JPO＆NCIPI -
公开(公告)号：JP2003158334A
公开(公告)日：2003-05-30
申请号：JP2002289449
申请日：2002-10-02
Applicant: XEROX CORP
Inventor： KNEISSL MICHAEL A , PAOLI THOMAS L
Abstract: PROBLEM TO BE SOLVED: To provide a blue color laser in which variations of output power due to transient heating are reduced. SOLUTION: A blue color laser diode comprising III-V group nitride in the short periodic table includes an amplification region 116 and a modulation region 118. The amplification region 116 allows a constant current to flow therethrough, and hereby the region is kept near a lasing threshold. The modulation region 118 has a variable small forward current or back bias voltage for controlling an optical output of the laser. Since consumed electric power of the two region blue color laser diode is very sharply reduced, compared with that of a direct modulation type laser, transient heating and attenuation of the optical output are reduced.
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公开(公告)号：JP2003124407A
公开(公告)日：2003-04-25
申请号：JP2002288232
申请日：2002-10-01
Applicant: XEROX CORP
Inventor： ROMANO LINDA T , KNEISSL MICHAEL A , NORTHRUP JOHN E
Abstract: PROBLEM TO BE SOLVED: To obtain a substrate having a high thermal conductivity and a structural integrality with a thick board, related to a semiconductor device. SOLUTION: The substrate 100 includes a body 11 having an upper surface 114 and a bottom surface 112 opposite to the upper surface 114 and having the first thermal conductivity, a cavity 116 defined by an inner surface 113 of the body 110 and opened at least on the bottom surface 112, and at least one material 120 disposed in the cavity 116 having the second thermal conductivity higher than the first thermal conductivity and coming into contact with at least a part of the inner surface 113.
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