中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

167 records (took 0.054 seconds)

    Method for producing an acceleration sensor
    22.
    发明授权
    Method for producing an acceleration sensor 失效
    加速度传感器的制造方法

    公开(公告)号：US5525549A

    公开(公告)日：1996-06-11

    申请号：US49801

    申请日：1993-04-21

    Applicant: Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    Inventor： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    IPC: B81B3/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/3063 ,  H01L21/78 ,  H01L21/64

    CPC classification number: B81C1/00888 ,  B81C1/00158 ,  G01L9/0055 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/3063 ,  H01L21/78 ,  B81B2201/0235 ,  B81C2201/0114 ,  B81C2201/053 ,  Y10S148/028 ,  Y10S148/159 ,  Y10S438/977

    Abstract: A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.

    Abstract translation: 一种能够解决与用于电化学蚀刻的金属薄膜切割相关的问题的半导体器件的制造方法。 根据该方法，在p型单晶硅晶片上形成n型外延薄层。 在外延层上的划线区域中形成n +型扩散层。 在对应于晶片的预定部分的外延层的区域中形成n +型扩散层。 在扩散层上形成铝膜。 铝膜具有用于通过切割刀片的间隙。 通过供电通过铝膜和扩散层对晶片的一部分进行电化学蚀刻，以留下外延层的部分。 晶片沿着划线区切成芯片。 每个芯片形成单独的半导体器件。 通过将晶片浸入KOH水溶液中并通过铝膜供电，在形成铝膜之后进行晶片的电化学蚀刻。 在蚀刻电流从峰值水平变为恒定水平的拐点处终止电化学蚀刻。 在电化学蚀刻期间，扩散层减小外延层中的水平电阻，使得蚀刻部分具有足够的电位进行蚀刻。

    ">
    23.
    发明申请
    "LOW POWER SILICON THERMAL SENSORS AND MICROFLUIDIC DEVICES BASED ON THE USE OF POROUS SILICON SEALED AIR CAVITY TECHNOLOGY OR MICROCHANNEL TECHNOLOGY" 审中-公开
    “基于使用多孔硅密封空气技术或微型通道技术的低功率硅传感器和微流体设备”

    公开(公告)号：WO2003062134A1

    公开(公告)日：2003-07-31

    申请号：PCT/GR2003/000003

    申请日：2003-01-16

    Applicant: NCSR "DEMOKRITOS" ,  NASSIOPOULOU, Androula, G. ,  KALTSAS, Grigoris ,  PAGONIS, Dimitrios, Nickolaos

    Inventor： NASSIOPOULOU, Androula, G. ,  KALTSAS, Grigoris ,  PAGONIS, Dimitrios, Nickolaos

    IPC: B81B3/00

    CPC classification number: B81C1/00071 ,  B81B2201/058 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  G01F1/6845 ,  G01K7/028

    Abstract: This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples (6, 7) on each side of a heater (4), all integrated on a porous silicon membrane (2) on top of a cavity (3). Porous silicon (2) with the cavity (3) underneath provides very good thermal isolation for the sensor elements, so as the power needed to maintain the heater (4) at a given temperature is very low. The formation process of the porous silicon membrane (2) with the cavity (3) underneath is a two-step single electrochemical process. It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon (2) and it is then turned into electropolishing conditions to form the cavity (3) underneath.Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels (16) using the same technique of porous silicon (17) and cavity (16) formation.

    Abstract translation: 本发明提供了一种基于在加热器（4）的每一侧上使用两个集成的热电偶（6,7）的系列，具有改进的特性的小型化硅热流量传感器，它们全部集成在顶部的多孔硅膜（2）上 的腔（3）。 具有下面的空腔（3）的多孔硅（2）为传感器元件提供了非常好的热隔离，因此将加热器（4）保持在给定温度所需的功率非常低。 多孔硅膜（2）与下面的腔（3）的形成过程是两步单电化学过程。 这是基于以下事实：当阳极电流相对较低时，我们处于多孔硅形成的状态，而如果该电流超过一定值，则我们变成电解抛光的方式。 该过程以低电流开始以形成多孔硅（2），然后转化为电抛光条件以形成下面的空腔（3）。各种热传感器装置，例如流量传感器，气体传感器，IR检测器，湿度传感器 并使用所提出的方法来描述热电发电机。 此外，本发明提供了使用与多孔硅（17）和空腔（16）相同的技术形成微流体通道（16）的方法。

    METHOD FOR ELECTROCHEMICALLY ETCHING A P-TYPE SEMICONDUCTING MATERIAL, AND A SUBSTRATE OF AT LEAST PARTLY POROUS SEMICONDUCTING MATERIAL
    25.
    发明申请
    METHOD FOR ELECTROCHEMICALLY ETCHING A P-TYPE SEMICONDUCTING MATERIAL, AND A SUBSTRATE OF AT LEAST PARTLY POROUS SEMICONDUCTING MATERIAL 审中-公开
    电化学蚀刻P型半导体材料的方法和至少一部分多孔半导体材料的基板

    公开(公告)号：WO99045583A1

    公开(公告)日：1999-09-10

    申请号：PCT/NL1999/000111

    申请日：1999-03-02

    IPC: B81C1/00 ,  C25F3/14 ,  H01L21/3063 ,  H01L21/306

    CPC classification number: H01L21/3063 ,  B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25F3/14

    Abstract: The invention relates to a method of electrochemically etching a p-type semiconductor material, characterized by the following steps: a) the application of mask material on a substrate of the p-type semiconductor material; b) the local removal of the mask material; and c) placing the substrate with the mask into a corrosive electrolytic solution while simultaneously applying a current density through the substrate; wherein the current density during step c) is adjusted alternatingly to a high value causing the semiconductor material to be completely etched away, and a low value corroding the semiconductor material such as to become porous.

    Abstract translation: 本发明涉及一种电化学蚀刻p型半导体材料的方法，其特征在于以下步骤：a）掩模材料在p型半导体材料的衬底上的应用; b）局部去除面罩材料; 以及c）将具有所述掩模的所述基板放置在腐蚀性电解溶液中，同时施加电流密度通过所述基板; 其中步骤c）中的电流密度被交替地调节到高值，导致半导体材料被完全蚀刻掉，并且低值腐蚀半导体材料以变得多孔。

    TUNABLE MEMS ETALON
    26.
    发明申请
    TUNABLE MEMS ETALON 审中-公开

    公开(公告)号：WO2017009850A1

    公开(公告)日：2017-01-19

    申请号：PCT/IL2016/050772

    申请日：2016-07-14

    Applicant: TECHNOLOGY INNOVATION MOMENTUM FUND (ISRAEL) LIMITED PARTNERSHIP

    Inventor： KRYLOV, Viacheslav ,  RAZ, Ariel ,  MENDLOVIC, David

    IPC: G02B26/00 ,  H01S5/022 ,  H01L23/02

    CPC classification number: H04N9/045 ,  B81B3/0056 ,  B81B2201/042 ,  B81C1/00507 ,  B81C2201/0114 ,  G02B26/001

    Abstract: Disclosed herein is a novel a tunable Micro-Electro-Mechanical (MEMS) Etalon system including: a functional layer patterned to define a suspension structure for suspending a first mirror being an aperture mirror of the Etalon, an aperture mirror coupled to the suspension structure, and a back layer including a second mirror, being a back mirror of the Etalon. The functional layer may be located above the back layer and the back layer may include spacer structures protruding therefrom towards the aperture mirror to define a minimal gap between the aperture mirror and the back mirror and prevent collision between them. The aspect ratio between the width of the etalon/mirrors may be high (e.g. at least 500), and the minimal gap/distance between the mirrors may be small in the order of tens of nanometers (nm). Accordingly, in some implementations the parallelism between the aperture mirror and the back mirror is adjustable to avoid chromatic artifacts associated with spatial variations in the spectral transmission profile across the etalon.

    Abstract translation: 本文公开了一种新颖的可调谐微机电系统，其包括：图案化以限定悬挂结构的功能层，用于悬挂作为Etalon的孔径反射镜的第一反射镜，耦合到悬架结构的孔径镜， 以及包括作为Etalon的后视镜的第二反射镜的背层。 功能层可以位于背层之上，并且背层可以包括从其向孔径反射镜突出的间隔结构，以限定孔径镜和后反射镜之间的最小间隙并防止它们之间的碰撞。 标准具/反射镜的宽度之间的纵横比可以是高的（例如至少500），并且反射镜之间的最小间隙/距离可以是几十纳米（nm）的数量级。 因此，在一些实施方案中，孔径镜和后视镜之间的平行度是可调节的，以避免与跨越标准具的光谱透射曲线的空间变化相关联的色差。

    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES
    27.
    发明申请
    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES 审中-公开
    纳米和纳米级器件尺寸反馈控制

    公开(公告)号：WO2012059251A2

    公开(公告)日：2012-05-10

    申请号：PCT/EP2011064085

    申请日：2011-08-16

    Applicant: IBM ,  WAGGONER PHILIP SUTTON ,  HARRER STEFAN ,  ROSSNAGEL STEPHEN

    Inventor： WAGGONER PHILIP SUTTON ,  HARRER STEFAN ,  ROSSNAGEL STEPHEN

    IPC: B81C1/00

    CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

    Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

    Abstract translation: 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到选定的尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

    INERTIA FORCE SENSOR AND METHOD FOR PRODUCING INERTIA FORCE SENSOR
    28.
    发明申请
    INERTIA FORCE SENSOR AND METHOD FOR PRODUCING INERTIA FORCE SENSOR 审中-公开
    惯性力传感器及其生成惯性力传感器的方法

    公开(公告)号：WO00042666A1

    公开(公告)日：2000-07-20

    申请号：PCT/JP1999/000078

    申请日：1999-01-13

    IPC: B81C1/00 ,  G01L1/00 ,  G01L9/00 ,  G01P15/00 ,  G01P15/08 ,  G01P15/09 ,  G01P15/12 ,  G01P15/125 ,  H01L29/84 ,  G01L9/04

    CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C2201/0114 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0817 ,  G01P2015/0828

    Abstract: An inertia force sensor comprising a mass body (11) displaced when a force is applied to the mass body (11), at least one holding beam (12) holding the mass body (11), and a fixing section (13) fixing one end of the holding beam (12) so as to sensing the inertia force acting on the mass body (11) based on the displacement of the mass body (11), characterized in that the mass body (11) has a hollow structure made by removing the inside of a silicon substrate (1) by one process of etching, and the fixing section (13) is at least a part of the main body of the silicon substrate (1). Since the inertia force sensor is made of single crystal silicon, the mechanical characteristics and reliability are greatly imporoved.

    Abstract translation: 1.一种惯性力传感器，包括：质量体（11），其在向所述质量体（11）施加力时移动的质量体（11）;保持所述质量体（11）的至少一个保持梁（12）;以及固定部 基于所述质量体（11）的位移来感测作用在所述质量体（11）上的惯性力的所述保持梁（12）的端部，其特征在于，所述质量体（11）具有由 通过一个蚀刻工艺去除硅衬底（1）的内部，并且固定部分（13）是硅衬底（1）的主体的至少一部分。 由于惯性力传感器由单晶硅制成，所以机械特性和可靠性受到极大的关注。

Patent Agency Ranking