公开(公告)号：US08865599B2

公开(公告)日：2014-10-21

申请号：US13672527

申请日：2012-11-08

Applicant: Brewer Science Inc.

Inventor： Dongshun Bai ,  Xie Shao ,  Michelle Fowler ,  Tingji Tang

IPC: H01L21/31 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/027 ,  C09D127/18 ,  H01L29/02 ,  B81C1/00 ,  C08L33/16 ,  C08L33/14

CPC classification number: H01L21/31058 ,  B81C1/00611 ,  B81C2201/0119 ,  C08L33/14 ,  C08L33/16 ,  C09D127/18 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/0271 ,  H01L29/02 ,  Y10S438/958

Abstract: Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.

Abstract translation: 公开了由此形成的平面化方法和微电子结构。 方法和结构使用包含氟化化合物或乙酰乙酰化化合物的平面化材料。 材料是自流平的，并且在不使用蚀刻，接触平面化，化学机械抛光或其它常规平面化技术的情况下实现平面化。

公开(公告)号：US08629011B2

公开(公告)日：2014-01-14

申请号：US13161194

申请日：2011-06-15

Applicant: Brett M. Diamond ,  Franz Laermer ,  Andrew J. Doller ,  Michael J. Daley ,  Phillip Sean Stetson ,  John M. Muza

Inventor： Brett M. Diamond ,  Franz Laermer ,  Andrew J. Doller ,  Michael J. Daley ,  Phillip Sean Stetson ,  John M. Muza

IPC: H01L21/339

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0119 ,  B81C2201/0177 ,  B81C2203/0714 ,  B81C2203/075 ,  B81C2203/0778 ,  H04R19/04 ,  H04R31/00

Abstract: A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer.

Abstract translation: 使用外延生长硅制造麦克风的方法。 提供了一种单片晶圆结构。 该结构的晶片表面包括第一水平区域中的多晶硅和围绕第一水平区域的周边的第二水平区域中的单晶硅。 杂化硅层外延沉积在晶片表面上。 接触多晶硅的混合硅层的部分使用多晶硅作为种子材料，并且接触单晶硅的部分使用单晶硅作为种子材料。 这样，混合硅层在同一晶片结构的相同层中包括单晶硅和多晶硅两者。 然后将CMOS /膜层沉积在混合硅层的顶部。

公开(公告)号：US20120319219A1

公开(公告)日：2012-12-20

申请号：US13161194

申请日：2011-06-15

Applicant: Brett M. Diamond ,  Franz Laermer ,  Andrew J. Doller ,  Michael J. Daley ,  Phillip Sean Stetson ,  John M. Muza

Inventor： Brett M. Diamond ,  Franz Laermer ,  Andrew J. Doller ,  Michael J. Daley ,  Phillip Sean Stetson ,  John M. Muza

IPC: H01L21/20 ,  H01L29/84

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0119 ,  B81C2201/0177 ,  B81C2203/0714 ,  B81C2203/075 ,  B81C2203/0778 ,  H04R19/04 ,  H04R31/00

Abstract: A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer.

Abstract translation: 使用外延生长硅制造麦克风的方法。 提供了一种单片晶圆结构。 该结构的晶片表面包括第一水平区域中的多晶硅和围绕第一水平区域的周边的第二水平区域中的单晶硅。 杂化硅层外延沉积在晶片表面上。 接触多晶硅的混合硅层的部分使用多晶硅作为种子材料，并且接触单晶硅的部分使用单晶硅作为种子材料。 这样，混合硅层在同一晶片结构的相同层中包括单晶硅和多晶硅两者。 然后将CMOS /膜层沉积在混合硅层的顶部。

公开(公告)号：US08203776B2

公开(公告)日：2012-06-19

申请号：US12324259

申请日：2008-11-26

Applicant: Rosemary Urmese Anthraper ,  Lucius M. Sherwin ,  Irma Izzeth Annillo

Inventor： Rosemary Urmese Anthraper ,  Lucius M. Sherwin ,  Irma Izzeth Annillo

IPC: G02B26/08

CPC classification number: G02B26/0833 ,  B81B2201/042 ,  B81B2203/0181 ,  B81C1/00174 ,  B81C1/00611 ,  B81C2201/0119 ,  Y10S359/90

Abstract: A method of forming an electronic device includes providing a patterned lower metal layer over a substrate and a first sacrificial layer there between. A second sacrificial layer is formed over the metal layer, and a portion thereof is removed. A third sacrificial layer is formed over the second sacrificial layer, and an upper metal layer is formed over the third sacrificial layer. A portion of the upper metal layer is removed, and the first, second and third sacrificial layers are removed.

Abstract translation: 形成电子器件的方法包括在衬底之上提供图案化的下金属层和在其之间的第一牺牲层。 第二牺牲层形成在金属层的上方，并且其一部分被去除。 在第二牺牲层上形成第三牺牲层，并且在第三牺牲层上形成上金属层。 除去上部金属层的一部分，并且去除第一，第二和第三牺牲层。

公开(公告)号：US20100128338A1

公开(公告)日：2010-05-27

申请号：US12324259

申请日：2008-11-26

Applicant: Rosemary Urmese Anthraper ,  Lucius M. Sherwin ,  Irma Izzeth Annillo

Inventor： Rosemary Urmese Anthraper ,  Lucius M. Sherwin ,  Irma Izzeth Annillo

IPC: G02B26/08 ,  B29D11/00

CPC classification number: G02B26/0833 ,  B81B2201/042 ,  B81B2203/0181 ,  B81C1/00174 ,  B81C1/00611 ,  B81C2201/0119 ,  Y10S359/90

Abstract: A method of forming an electronic device includes providing a patterned lower metal layer over a substrate and a first sacrificial layer there between. A second sacrificial layer is formed over the metal layer, and a portion thereof is removed. A third sacrificial layer is formed over the second sacrificial layer, and an upper metal layer is formed over the third sacrificial layer. A portion of the upper metal layer is removed, and the first, second and third sacrificial layers are removed.

Abstract translation: 形成电子器件的方法包括在衬底之上提供图案化的下金属层和在其之间的第一牺牲层。 第二牺牲层形成在金属层的上方，并且其一部分被去除。 在第二牺牲层上形成第三牺牲层，并且在第三牺牲层上形成上金属层。 除去上部金属层的一部分，并且去除第一，第二和第三牺牲层。

公开(公告)号：US20060009038A1

公开(公告)日：2006-01-12

申请号：US10889437

申请日：2004-07-12

Applicant: Guy Cohen ,  Steven Cordes ,  Sherif Goma ,  Joanna Rosner ,  Jeannine Trewhella

Inventor： Guy Cohen ,  Steven Cordes ,  Sherif Goma ,  Joanna Rosner ,  Jeannine Trewhella

IPC: H01L21/311 ,  G03C5/00 ,  H01L21/31 ,  H01L21/44 ,  H01L21/302

CPC classification number: H01L21/31051 ,  B81C1/00611 ,  B81C2201/0119 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212 ,  H01L21/76838

Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.

公开(公告)号：WO2012065802A1

公开(公告)日：2012-05-24

申请号：PCT/EP2011/068371

申请日：2011-10-20

Applicant: THE SWATCH GROUP RESEARCH AND DEVELOPMENT LTD ,  BOURBAN, Stewes ,  RICHARD, David ,  GILOMEN, Beat ,  STEINMUELLER, Detlef ,  DREXEL, Herwig ,  STEINMUELLER, Doris ,  GHODBANE, Slimane

Inventor： BOURBAN, Stewes ,  RICHARD, David ,  GILOMEN, Beat ,  STEINMUELLER, Detlef ,  DREXEL, Herwig ,  STEINMUELLER, Doris ,  GHODBANE, Slimane

IPC: C23C16/27 ,  D04B15/14 ,  B81B3/00

CPC classification number: H01L21/02527 ,  B81B3/0075 ,  B81B2201/035 ,  B81C2201/0119 ,  C23C16/27 ,  C23C16/278 ,  C23C16/279 ,  G04B15/14

Abstract: Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate (4) component to be coated; providing said component with a first diamond coating (2) doped with boron; providing said component with a second diamond coating (3); wherein :said second diamond coating (3) is provided by CVD in a reaction chamber; during CVD deposition, during the last portion of the growth process, a controlled increase of the carbon content within the reaction chamber is provided, thereby providing an increase of the sp2/sp3 carbon (6) bonds up to an sp2 content substantially between 1% and 45%. Corresponding micromechanical components are also provided.

Abstract translation: 用于涂覆微机械系统的微机械部件的方法，特别是手表机芯，包括：提供待涂覆的基底（4）部件; 向所述部件提供掺杂有硼的第一金刚石涂层（2）; 向所述部件提供第二金刚石涂层（3）; 其中：所述第二金刚石涂层（3）通过CVD在反应室中提供; 在CVD沉积期间，在生长过程的最后部分期间，提供了反应室内碳含量的可控增加，从而提供sp2 / sp3碳（6）键的增加，直到sp2含量基本上在1％ 和45％。 还提供了相应的微机械部件。

公开(公告)号：WO2003038887A1

公开(公告)日：2003-05-08

申请号：PCT/US2002/034594

申请日：2002-10-29

Applicant: BREWER SCIENCE, INC.

Inventor： WU-SHENG, Shih ,  Lamb, James, E., III

IPC: H01L21/4763

CPC classification number: B81C1/0046 ,  B81C1/00611 ,  B81C2201/0119 ,  C08G59/68 ,  C08L63/00 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/312

Abstract: The present invention is directed towards planarization materials that produce little or no volatile byproducts during the hardening process when used in contact planarization process. The materials can be hardened by photo-orradiation or by heat during the planirization process, and they include one or more types of monomers, oligomers, or mixtures thereof, an optional cross-linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of the polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

Abstract translation: 本发明涉及在用于接触平面化处理的硬化过程中产生很少或不产生挥发性副产物的平面化材料。 这些材料可以在平面化过程中通过光照或加热来硬化，并且它们包括一种或多种类型的单体，低聚物或其混合物，任选的交联剂和任选的有机反应性溶剂。 溶剂（如果使用的话）与单体或低聚物发生化学反应，因此在固化过程中成为聚合物基质的一部分。 这些材料可用于镶嵌，双镶嵌，双层和多层应用，微机电系统（MEMS），封装，光学器件，光子学，光电子学，微电子学和传感器器件制造。

公开(公告)号：WO2003055789A1

公开(公告)日：2003-07-10

申请号：PCT/JP2002/013128

申请日：2002-12-16

Applicant: ソニー株式会社 ,  池田 浩一 ,  木下 隆

Inventor： 池田 浩一 ,  木下 隆

IPC: B81B3/00

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0119 ,  B81C2201/0125

Abstract: A method for manufacturing an MEMS element for flattening a drive side electrode surface, reducing irregularities of beam shape, improving performance, and improving performance uniformity. The method includes a step of forming a substrate side electrode on a substrate, a step of forming a fluid film before or after formation of a sacrificial layer, a step of forming a beam having a drive side electrode on a flattened surface, and a step of removing the sacrificial layer.

Abstract translation: 一种用于制造用于使驱动侧电极表面平坦化的MEMS元件的方法，减少光束形状的不规则性，提高性能并提高性能均匀性。 该方法包括在基板上形成基板侧电极的步骤，在形成牺牲层之前或之后形成流体膜的步骤，在平坦表面上形成具有驱动侧电极的光束的步骤，以及步骤 去除牺牲层。

公开(公告)号：WO01093997A1

公开(公告)日：2001-12-13

申请号：PCT/US2001/017985

申请日：2001-06-01

IPC: B01F5/04 ,  B01F13/00 ,  B01F15/02 ,  B81B3/00 ,  B81C1/00

CPC classification number: B01F13/0072 ,  B01F5/0403 ,  B01F13/0093 ,  B01F15/0201 ,  B01F15/024 ,  B01F15/0243 ,  B01F2005/0031 ,  B81C1/00611 ,  B81C2201/0119 ,  Y10T137/0329 ,  Y10T137/2185 ,  Y10T137/2196 ,  Y10T137/2224

Abstract: A micro-electromechanical system and method for continuous laminar fluid mixing. An embodiment of the invention described in the specification includes a mixing channel (22), a first delivery channel (24) that is connected to the mixing channel, and a second delivery channel (26) that is connected to the mixing channel. A first pump mechanism (30) produces pulses in the first delivery channel. A second pump mechanism (40) produces pulses in the second delivery channel. The first pulsed fluid stream and the second pulsed fluid stream merge in the mixing channel to form a mixed fluid. The pulses in the fluids operate to distort the interface between the fluids to facilitate diffusion between the fluids.

Abstract translation: 一种用于连续层流混合的微机电系统和方法。 在说明书中描述的本发明的实施例包括混合通道（22），连接到混合通道的第一输送通道（24）和连接到混合通道的第二输送通道（26）。 第一泵机构（30）在第一输送通道中产生脉冲。 第二泵机构（40）在第二输送通道中产生脉冲。 第一脉冲流体流和第二脉冲流体流在混合通道中合并形成混合流体。 流体中的脉冲操作以扭曲流体之间的界面，以促进流体之间的扩散。