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公开(公告)号：WO2011084139A1
公开(公告)日：2011-07-14
申请号：PCT/US2010/003209
申请日：2010-12-15
Applicant: LOS ALAMOS NATIONAL SECURITY, LLC , MOODY, Nathan, A. , LIZON, David, Charles , NGUYEN, Dinh, Cong
Inventor： MOODY, Nathan, A. , LIZON, David, Charles , NGUYEN, Dinh, Cong
CPC classification number: H01J1/34 , H01J3/021 , H01J2201/3426
Abstract: Self-healing photocathode device comprising a photoemissive multi-alkali semiconductor comprising a multi-alkali antimonide having the formula AxBy C2Sb, where A, B and C are Group I alkali metals and x+y+z = 3; a nanostructured porous membrane, one surface of which is in direct contact with the multi-alkali semiconductor and the opposing surface of which is disposed toward the inside of a sealed reservoir, such that the porous membrane and the sealed reservoir form a volume which is maintained at low pressure; a temperature control means in contact with the porous membrane, wherein the temperature control means regulates the temperature of the porous membrane at 2000C or less; a source comprising elemental cesium which is releasable into the enclosed volume; and, a current conducting means attached to the source.
Abstract translation: 包含具有式AxBy C2Sb的多碱锑化物的光发射多碱半导体的自愈合光电阴极装置，其中A，B和C是I族碱金属，x + y + z = 3; 纳米结构多孔膜，其一个表面与多碱半导体直接接触并且其相对表面设置在密封储存器的内部，使得多孔膜和密封储存器形成维持的体积 在低压下 与所述多孔膜接触的温度控制装置，其中所述温度控制装置将所述多孔膜的温度调节至200℃以下; 包含可释放到封闭容积中的元素铯的源; 以及附接到源的电流传导装置。
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公开(公告)号：JPWO2004066339A1
公开(公告)日：2006-05-18
申请号：JP2005508054
申请日：2004-01-16
Applicant: 浜松ホトニクス株式会社
IPC: H01J9/12 , C22B5/04 , C22B26/10 , C23C14/14 , C23C14/24 , H01J1/32 , H01J1/34 , H01J1/35 , H01J29/38 , H01J31/50 , H01J40/06 , H01J43/08 , H01J43/18
CPC classification number: C22B26/10 , C22B5/04 , C23C14/14 , C23C14/243 , H01J1/35 , H01J9/12 , H01J2201/32 , H01J2201/3426
Abstract: この発明は、アルカリ金属を安定的に発生させることのできる光電面又は二次電子放出面を形成するためのアルカリ金属発生剤等に関する。当該アルカリ金属発生剤(1)は、入射光に対応して光電子を放出する光電面、又は入射電子に対応して二次電子を放出する二次電子放出面の形成に使用される。特に、当該アルカリ金属発生剤(1)は、アルカリ金属イオンをカウンターカチオンとする少なくとも一種のバナジウム酸塩からなる酸化剤と、前記イオンを還元するための還元剤とを少なくとも含む。バナジウム酸塩はクロム酸塩よりも酸化力が弱いので、還元剤との酸化還元反応がクロム酸塩の場合に比べて緩やかに進行し、反応速度の制御が容易である。
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公开(公告)号：JPWO2004066338A1
公开(公告)日：2006-05-18
申请号：JP2005508050
申请日：2004-01-16
Applicant: 浜松ホトニクス株式会社
IPC: H01J9/12 , C22B5/04 , C22B26/10 , C23C14/14 , C23C14/24 , H01J1/32 , H01J1/34 , H01J1/35 , H01J29/38 , H01J31/50 , H01J40/06 , H01J43/08 , H01J43/18
CPC classification number: C22B26/10 , C22B5/04 , C23C14/14 , C23C14/243 , H01J1/35 , H01J9/12 , H01J2201/32 , H01J2201/3426
Abstract: この発明は、アルカリ金属を安定的に発生させることのできる光電面又は二次電子放出面を形成するためのアルカリ金属発生剤等に関する。当該アルカリ金属発生剤(1)は、入射光に対応して光電子を放出する光電面、又は入射電子に対応して二次電子を放出する二次電子放出面の形成に使用される。特に、当該アルカリ金属発生剤(1)は、アルカリ金属イオンをカウンターカチオンとする少なくとも一種のモリブデン酸塩からなる酸化剤と、前記イオンを還元するための還元剤とを少なくとも含む。モリブデン酸塩はクロム酸塩よりも酸化力が弱いので、還元剤との酸化還元反応がクロム酸塩の場合に比べて緩やかに進行し、反応速度の制御が容易である。
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公开(公告)号：JP6419572B2
公开(公告)日：2018-11-07
申请号：JP2014264384
申请日：2014-12-26
Applicant: 浜松ホトニクス株式会社
Inventor： 佐々木 達夫
CPC classification number: H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
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公开(公告)号：JP4440887B2
公开(公告)日：2010-03-24
申请号：JP2005508054
申请日：2004-01-16
Applicant: 浜松ホトニクス株式会社
IPC: H01J9/12 , C22B5/04 , C22B26/10 , C23C14/14 , C23C14/24 , H01J1/32 , H01J1/34 , H01J1/35 , H01J29/38 , H01J31/50 , H01J40/06 , H01J43/08 , H01J43/18
CPC classification number: C22B26/10 , C22B5/04 , C23C14/14 , C23C14/243 , H01J1/35 , H01J9/12 , H01J2201/32 , H01J2201/3426
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Patent Agency Ranking
公开(公告)号：KR1020170099934A
公开(公告)日：2017-09-01
申请号：KR1020177019010
申请日：2015-12-15
Applicant: 하마마츠 포토닉스 가부시키가이샤
Inventor： 사사키다츠오
CPC classification number: H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
Abstract: 광전면의자외선대역에있어서의감도를향상시킨다. 광전면(1)은자외선을투과시키는창재(2)와, 창재(2)에형성되고, 도전성을가지는도전막(3)과, 도전막(3)에형성되고, MgF로이루어지는중간막(4)과, 중간막(4)에형성되고, CsTe로이루어지는광전변환막(6)을구비한다. 광전면(1)은 MgF로이루어지는중간막(4)을구비하므로, 자외선대역의감도가향상된다.
Abstract translation: 从而提高了整个光表面的紫外波段的灵敏度。 光学正面1由用于透射紫外线的窗口部件2，形成在窗口部件2上并具有导电性的导电膜3，形成在导电膜3上的中间膜4， 并且，在中间膜4上形成由CsTe构成的光电转换膜6。 由于光学正面1包括由MgF制成的中间膜4，所以紫外线带的灵敏度得到改善。
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公开(公告)号：KR1019910001868B1
公开(公告)日：1991-03-28
申请号：KR1019880002888
申请日：1988-03-18
Applicant: 가부시끼가이샤 도시바
Inventor： 아라마끼요시미쯔
CPC classification number: H01J29/385 , H01J9/12 , H01J2201/3425 , H01J2201/3426
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公开(公告)号：US20060055322A1
公开(公告)日：2006-03-16
申请号：US10538642
申请日：2004-01-16
Applicant: Hiroyuki Sugiyama , Yoshiro Akai
Inventor： Hiroyuki Sugiyama , Yoshiro Akai
IPC: H01J40/06
CPC classification number: C22B26/10 , C22B5/04 , C23C14/14 , C23C14/243 , H01J1/35 , H01J9/12 , H01J2201/32 , H01J2201/3426
Abstract: The present invention relates to an alkali metal generating agent and others for formation of a photo-cathode or a secondary-electron emitting surface capable of stably generating an alkali metal. The alkali metal generating agent is used in formation of a photo-cathode for emitting a photoelectron corresponding to incident light, or in formation of a secondary-electron emitting surface for emitting secondary electrons corresponding to an incident electron. Particularly, the alkali metal generating agent contains at least an oxidizer comprising at least one tungstate with an alkali metal ion as a counter cation, and a reducer for reducing the ion. An alkali metal generating device comprises at least the alkali metal generating agent and a case housing it, and the case is provided with a discharge port for discharging the vapor of the alkali metal.
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29.发明授权Electron multiplier for forming a photomultiplier and cascade multiplying an incident electron flow using multilayerd dynodes 失效用于形成光电倍增管的电子倍增器，并使用多层倍增电极级联入射电子流
公开(公告)号：US5498926A
公开(公告)日：1996-03-12
申请号：US234142
申请日：1994-04-28
Applicant: Hiroyuki Kyushima , Koji Nagura , Yutaka Hasegawa , Eiichiro Kawano , Tomihiko Kuroyanagi , Akira Atsumi , Masuya Mizuide
Inventor： Hiroyuki Kyushima , Koji Nagura , Yutaka Hasegawa , Eiichiro Kawano , Tomihiko Kuroyanagi , Akira Atsumi , Masuya Mizuide
CPC classification number: H01J43/04 , H01J43/10 , H01J43/12 , H01J43/22 , H01J9/12 , H01J9/18 , H01J2201/32 , H01J2201/3426
Abstract: A photomultiplier which can be easily made compact has a dynode unit constituted by stacking a plurality of stages of dynode plates in an electron incident direction in a vacuum container constituted by a housing and a base member integrally formed with the housing. Each dynode plate has an engaging member engaged with a connecting pin for applying a voltage at a side surface thereof. Through holes for guiding the connecting pins from the outside of the container are formed in the base member. Each engaging member is arranged not to overlap the remaining engaging members in the stacking direction of the dynode plates. The arrangement position of each engaging member and the arrangement position of the through hole for guiding the corresponding connecting pin to be connected are matched with each other.
Abstract translation: 可以容易地制造的光电倍增器具有通过在由壳体和与壳体一体形成的基座构件构成的真空容器中沿电子入射方向堆叠多级倍增极板而构成的倍增电极单元。 每个倍增器板具有与用于在其侧表面施加电压的连接销接合的接合构件。 在基部构件上形成有用于从容器的外部引导连接销的通孔。 每个接合构件布置成在倍增极板的层叠方向上不与剩余的接合构件重叠。 每个接合构件的布置位置和用于引导要连接的相应连接销的通孔的布置位置彼此匹配。
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公开(公告)号：US5205902A
公开(公告)日：1993-04-27
申请号：US789975
申请日：1991-11-12
Applicant: Jerry R. Horton , G. William Tasker
Inventor： Jerry R. Horton , G. William Tasker
CPC classification number: H01J43/246 , H01J9/12 , H01J2201/32 , H01J2201/3423 , H01J2201/3426
Abstract: A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.
Abstract translation: 公开了一种微通道板和方法。 在优选实施例中，微通道板是各向异性可蚀刻材料的水，其已经在对应于微通道位置的选定区域中经过定向施加的反应性颗粒的流量抵靠晶片的至少一个面。 通量从选定区域去除材料，以根据施加的焊剂的方向性在晶片中产生微通道。
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