SELECTED AREA ADHESION AND SURFACE PASSIVATION OF METAL FILMS
    22.
    发明申请
    SELECTED AREA ADHESION AND SURFACE PASSIVATION OF METAL FILMS 审中-公开
    选择区域金属膜的粘附和表面钝化

    公开(公告)号:WO1996017693A1

    公开(公告)日:1996-06-13

    申请号:PCT/US1995015605

    申请日:1995-12-08

    CPC classification number: G01M3/045 C23C8/10 C23C26/00 G01N27/12 G01N33/0052

    Abstract: A thin film device having a selectively passivated surface (16) is provided. An embodiment of the device is particularly suited to detection of chemical constituents by selective adsorption, where the selectively passivated surface (16) is inert to the chemical constituent being detected. A method of fabrication of the device is also provided in which the selective passivation is achieved by selectively applying the metallic adhesive (14) to the substrate (12). The migration of the metallic adhesive (14) through the thin film layer (16) is essentially normal to the surface of the substrate (12), thereby limiting the passivation of the thin film layer (16) to the surface areas directly overlying the metallic adhesive (14).

    Abstract translation: 提供了具有选择性钝化表面(16)的薄膜装置。 该装置的一个实施方案特别适用于通过选择性吸附来检测化学成分,其中选择性钝化的表面(16)对被检测的化学成分是惰性的。 还提供了一种制造该器件的方法,其中通过选择性地将金属粘合剂(14)施加到基底(12)来实现选择性钝化。 金属粘合剂(14)穿过薄膜层(16)的迁移基本上垂直于基底(12)的表面,由此限制薄膜层(16)的钝化直接覆盖金属 粘合剂(14)。

    METHOD OF FORMING METAL OXIDE COATINGS
    23.
    发明申请
    METHOD OF FORMING METAL OXIDE COATINGS 审中-公开
    形成金属氧化物涂层的方法

    公开(公告)号:WO1992019391A1

    公开(公告)日:1992-11-12

    申请号:PCT/US1992003505

    申请日:1992-04-28

    Abstract: A method is disclosed of forming thin uniform micron range and submicron range aberration-resistant and hole-free high-temperature thermally stable metal oxide coatings upon metal, insulating and other substrates, involving the application of a polymer metal complex precursor solution to the substrate and appropriate firing for oxidation of the metal and the coating while burning off all traces of the polymer. Insulating metal oxide coatings on conducting and semiconducting substrates are produced, and, if desired, conducting metal oxide coatings on insulating or semiconducting substrates.

    Abstract translation: 公开了一种在金属,绝缘和其它基底上形成薄的均匀微米范围和亚微米范围的抗像差和无孔高温热稳定金属氧化物涂层的方法,涉及将聚合物金属络合物前体溶液施加到基底上, 适当地烧制金属和涂层的氧化,同时燃烧聚合物的所有痕迹。 制造导电和半导体衬底上的绝缘金属氧化物涂层,如果需要,在绝缘或半导体衬底上导电金属氧化物涂层。

    ADDITIVE METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARDS USING AQUEOUS ALKALINE DEVELOPABLE AND STRIPPABLE PHOTORESISTS
    24.
    发明申请
    ADDITIVE METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARDS USING AQUEOUS ALKALINE DEVELOPABLE AND STRIPPABLE PHOTORESISTS 审中-公开
    使用水性碱性发光和剥离光电制造印刷电路板的添加剂方法

    公开(公告)号:WO1988008337A1

    公开(公告)日:1988-11-03

    申请号:PCT/US1988000077

    申请日:1988-01-15

    Abstract: An additive process for making printed circuit boards utilizing aqueous alkaline strippable resists, in which a suitable insulating substrate is patterned with the resist, the resist-patterned substrate catalyzed to electroless metal deposition, the resist then stripped completely from the substrate, utilizing an aqueous alkaline solution, preferably containing a reducing agent, and the electroless metal then deposited over the areas of the substrate catalyzed in the desired pattern.

    Abstract translation: 一种利用水性碱性可剥离抗蚀剂制造印刷电路板的添加方法,其中合适的绝缘衬底用抗蚀剂图案化,抗蚀剂图案化衬底被催化以进行无电金属沉积,然后使用碱性水溶液将抗蚀剂从衬底完全剥离 溶液,优选含有还原剂,然后将无电金属沉积在以所需图案催化的底物区域上。

    NITROGEN-BEARING CVD FILMS FROM NF3, AS A NITROGEN SOURCE
    26.
    发明申请
    NITROGEN-BEARING CVD FILMS FROM NF3, AS A NITROGEN SOURCE 审中-公开
    NF3作为硝态氮的氮离子CVD膜

    公开(公告)号:WO1998023389A1

    公开(公告)日:1998-06-04

    申请号:PCT/US1997021449

    申请日:1997-11-24

    Applicant: GENUS, INC.

    CPC classification number: C23C16/54 C23C16/34

    Abstract: Processes for forming nitride films in integrated circuit manufacture are accomplished by chemical vapor deposition using nitrogen fluoride (NF3) as a nitrogen-bearing gas providing nitrogen to the nitride film. The method includes the steps of placing a substrate in a CVD reactor chamber (11), heating the substrate (25), and flowing the precursors including nitrogen fluoride over the surface of the heated substrate to form the nitride films. Process examples are provided wherein the nitrided films are tungsten nitride, tungsten silicon nitride, and titanium silicon nitride. Process variations include film formation with and without plasma enhancement, and provision of silicon to films be either silane or disilane.

    Abstract translation: 在集成电路制造中形成氮化物膜的工艺通过使用氮氟化物(NF 3)作为向氮化物膜提供氮气的含氮气体的化学气相沉积来实现。 该方法包括以下步骤:将衬底放置在CVD反应器室(11)中,加热衬底(25),并使包含氮氟化物的前体在加热衬底的表面上流动以形成氮化物膜。 提供了其中氮化膜是氮化钨,氮化硅钨和氮化硅钛的工艺实例。 工艺变化包括具有和不具有等离子体增强的成膜,以及将硅提供为硅烷或乙硅烷。

    NOBLE METAL COATING METHOD BY IMMERSION
    27.
    发明申请
    NOBLE METAL COATING METHOD BY IMMERSION 审中-公开
    NOBLE金属涂层方法

    公开(公告)号:WO1996011751A1

    公开(公告)日:1996-04-25

    申请号:PCT/US1995013162

    申请日:1995-10-16

    CPC classification number: C23C18/42 H05K3/244

    Abstract: The invention features a composition for immersion plating comprising an aqueous solution of a noble metal salt and a complexing agent for ions of the noble metal, said solution having a pH of from about 0 to 5.5. The noble metal is preferably palladium in the form of palladium nitrate. The complexing agent is preferably oxalic acid. The composition is used in a method of immersion plating which comprises contacting a substrate which is preferably a copper or copper alloy component of a printed circuit board with the composition for a period of time sufficient to coat palladium onto the copper surface in a uniform manner. The methodology provides for a high degree of uniformity, good adhesion between the palladium and the copper as well as a relatively thin coating. Further, the palladium coating is carried out in a relatively short period of time and provides a longlived solderable finish.

    Abstract translation: 本发明的特征在于用于浸镀的组合物,其包含贵金属盐的水溶液和用于贵金属离子的络合剂,所述溶液的pH为约0至5.5。 贵金属优选为硝酸钯形式的钯。 络合剂优选为草酸。 该组合物用于浸镀方法中,该方法包括将印刷电路板的铜或铜合金组分的基底与该组合物接触足够长的时间以将铜以均匀的方式涂覆在铜表面上。 该方法提供了高度均匀性,钯和铜之间的良好粘合性以及较薄的涂层。 此外,钯涂层在相当短的时间内进行,并且提供了长期的可焊接光洁度。

    METHOD FOR DEPOSITING A THIN ANTISTATIC FILM ON THE SURFACE OF A SHAPED OBJECT
    30.
    发明申请
    METHOD FOR DEPOSITING A THIN ANTISTATIC FILM ON THE SURFACE OF A SHAPED OBJECT 审中-公开
    在形状对象表面沉积薄膜抗静电膜的方法

    公开(公告)号:WO1992010310A1

    公开(公告)日:1992-06-25

    申请号:PCT/FR1991001010

    申请日:1991-12-13

    CPC classification number: C08J7/123 B05D1/62 B05D5/12 C08J2325/04

    Abstract: The method involves producing a reactive gas flow of the cold plasma type by the action of a continuous, alternating or pulsed electric field having a frequency below 500 kHz, ranging in particular from 0 Hz to 100kHz, on a gas atmosphere made up in part or in its entirety from a hydrocarbon component, consisting of one or more C1 to C7 hydrocarbons, particularly methane, the said gas atmosphere being maintained at a pressure of between 1Pa and 60Pa. The shaped object is maintained below its softening point and kept in contact with the reactive gas flow for a sufficient time to allow deposition on its surface of a film between 10 nm and 1500 nm thick derived from the hydrocarbon component. The coated object has durable antistatic properties.

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