公开(公告)号：WO1993008483A1

公开(公告)日：1993-04-29

申请号：PCT/US1992007169

申请日：1992-08-27

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  CHIN, Moshing, P. ,  SCHWARTZ, Douglas, N.

IPC: G01S07/40

CPC classification number: G01S7/4004

Abstract: A versatile, reconfigurable automated radar test system. The invention (200) includes a system controller (212) for providing a plurality of digital control signals. Circuitry (232, 234, 236) is provided for converting the digital control signals to static analog and digital test signals. In addition, a function generator (240) is included for generating a plurality of dynamic analog and digital test signals. An interfacing arrangement (239, 242) is included for applying the static and dynamic analog and digital test signals to a module (12) of a radar system (10) under test.

公开(公告)号：WO1993008137A1

公开(公告)日：1993-04-29

申请号：PCT/US1992008870

申请日：1992-10-16

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  PASTOR, Ricardo, C. ,  PASTOR, Antonio, C. +di ,  GORRE, Luisa, E. +di ,  FULLER, Keith, C.

IPC: C04B35/00

CPC classification number: H01L39/2464 ,  C04B35/45 ,  C04B35/64 ,  Y10S505/725 ,  Y10S505/742

Abstract: High temperature superconducting oxide materials can be taken to a higher, but stable, state of oxidation by removing H-impurities, such as OH , using I2/O2 mixtures in a reactive atmosphere process. A higher Tc and a narrower DELTA T-transition result.

Abstract translation: 通过在反应性气氛中使用I2 / O2混合物，可以通过除去H - 杂质（如OH - ），将高温超导氧化物材料置于更高但稳定的氧化态。 较高的Tc和较窄的DELTA T转换结果。

公开(公告)号：WO1993004356A1

公开(公告)日：1993-03-04

申请号：PCT/US1992005176

申请日：1992-06-22

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  PURCELL, Lauren, M. ,  LAWRENCE, Albert, F.

IPC: G01N13/00

CPC classification number: B09C1/02 ,  G01N13/02 ,  G01N33/24 ,  G01N2013/0275

Abstract: The physics of adhesion are applied to choosing surfactants that have Lewis acid-base and dispersion force interaction values which are required to optimally extract pollutants (10) from soils (12). This application is novel in predicting a surfactant's effectiveness in the removal of toxic contaminants. Additionally, Lewis acid-base and dispersion forces are applied to the selection of a co-surfactant to improve the adhesion between a surfactant and a pollutant.

Abstract translation: 粘附的物理学应用于选择具有路易斯酸碱和分散力相互作用值的表面活性剂，其需要从土壤（12）中最佳地提取污染物（10）。 该应用在预测表面活性剂去除有毒污染物的有效性方面是新颖的。 另外，将路易斯酸碱和分散力应用于辅助表面活性剂的选择以改善表面活性剂与污染物之间的粘附性。

公开(公告)号：WO1993002426A1

公开(公告)日：1993-02-04

申请号：PCT/US1992005039

申请日：1992-06-15

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  BROOKE, Kenneth, R.

IPC: G06F15/72

CPC classification number: G06T11/203

Abstract: According to the teachings of the present invention, a visual simulation system (10') and method for digital computer graphics processing is described whereby the system (10') reduces the undesirable effects of aliasing on the digital computer images (59) rendered in the simulation. Real-Time Pixel Mixing (RTPM) is accomplished by processing each pixel (Pf) of a digital computer foreground image (60, 62) generated in real-time with the corresponding pixel (Pb) of a previously generated background image (64). The effect of the processing is to overlay the foreground image (60, 62) on the background image (64) and cause the pixels on the periphery of each object rendered in the foreground image (60, 62) to be color blended with the corresponding pixels of the background image (64) in such a manner as to "soften" the transition between the foreground (60, 62) and background (64) images. This results in a display image (59) having a detailed background with a sharp foreground and a smooth transition between the two which achieves the visual result desired by the visual simulation system (10'). The present invention allows a relatively inexpensive visual simulation system (10') to possess the apparent features of high-cost, full feature system.

Abstract translation: 根据本发明的教导，描述了一种用于数字计算机图形处理的视觉模拟系统（10'）和方法，由此系统（10'）减少了在所述数字计算机图形处理中渲染的数字计算机图像（59）上的不期望的混叠效应 模拟。 通过处理与先前生成的背景图像（64）的对应像素（Pb）实时生成的数字计算机前景图像（60,62）的每个像素（Pf）来实现实时像素混合（RTPM）。 处理的效果是将前景图像（60,62）覆盖在背景图像（64）上，并且使得在前景图像（60,62）中呈现的每个对象的周边上的像素与相应的颜色混合 以使“前景”（60,62）和背景（64）图像之间的转变“软化”的方式，背景图像（64）的像素。 这导致具有锐利前景的详细背景的显示图像（59）和两者之间的平滑过渡，从而实现视觉模拟系统（10'）期望的可视化结果。 本发明允许相对便宜的视觉模拟系统（10'）具有高成本，全特征系统的明显特征。

公开(公告)号：WO1993002366A1

公开(公告)日：1993-02-04

申请号：PCT/US1992006046

申请日：1992-07-17

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  WOO, Steven, C.

IPC: G01S05/04

CPC classification number: G01S5/04

Abstract: First and second passive sensors (14, 16), which may be mounted on different earth orbiting satellites, provide relative azimuth and elevation coordinates to sensed objects (A, B, C) such as hostile missiles. Minimum and maximum possible ranges to the objects (A, B, C) along lines-of-sight (18a, 18b, 18c) from the first sensor (14) are predetermined, and used to calculate "range lines" (24, 26, 28) which are coincident with the lines-of-sight (18a, 18b, 18c) and extend from the respective minimum to maximum ranges respectively. The range lines (24, 26, 28) are transformed into the field of view of the second sensor (16), and matched to the azimuth and elevation coordinates of the respective objects (A, B, C) using a basic feasible solution (greedy) or global optimization algorithm. The approximate points of intersection of lines-of-sight (20a, 20b, 20c) from the second sensor (16) to the objects (A, B, C) and matched range lines (24, 26, 28), are calculated, and transformed into coordinates relative to a reference point (10) such as the center of the earth (12). The calculations for the individual objects (A, B, C) may be performed simultaneously using parallel processors (44a, 44b, 44c) in a single instruction stream - multiple data stream (SIMD) or similar computing arrangement (40).

Abstract translation: 可以安装在不同的地球轨道卫星上的第一和第二无源传感器（14,16）为诸如敌对导弹的感测对象（A，B，C）提供相对的方位角和仰角坐标。 预定来自第一传感器（14）的沿视线（18a，18b，18c）的对象（A，B，C）的最小和最大可能范围，并用于计算“范围线”（24,26 ，28），其与视线（18a，18b，18c）重合，并分别从相应的最小值到最大范围。 将范围线（24,26,28）变换为第二传感器（16）的视野，并且使用基本可行解（A，B，C）与各个对象（A，B，C）的方位角和仰角坐标相匹配 贪心）或全局优化算法。 计算从第二传感器（16）到对象（A，B，C）和匹配范围线（24,26,28）的视线（20a，20b，20c）的相交点的近似点， 并相对于诸如地球（12）的中心的参考点（10）变换为坐标。 单个对象（A，B，C）的计算可以在单个指令流 - 多数据流（SIMD）或类似的计算装置（40）中使用并行处理器（44a，44b，44c）同时执行。

公开(公告)号：WO1991014411A1

公开(公告)日：1991-10-03

申请号：PCT/US1991001496

申请日：1991-03-05

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  McCAHON, Stephen, W. ,  TUTT, Lee, W.

IPC: A61F09/04

CPC classification number: A61F9/023 ,  A61F9/067 ,  G02C7/104 ,  G02F1/3523 ,  H01S3/005

Abstract: A lens (12) converges a light beam (16) into a light absorbing body (14) having a material which exhibits reverse saturable optical absorption distributed therein with a non-uniform concentration. The concentration is maximum at the focal point (20) of the converged light beam (16), and decreases toward the lens (12) with a distribution selected in correspondance with the optical gain of the converged light beam (16) to limit the local fluence of the light beam (16) propagating through the absorbing body (14), and the output energy of the light beam (16), to predetermined maximum values. The non-uniform concentration further produces a self-protecting effect by causing the region of maximum fluence of the converged light beam (16) to shift toward the lens (12), thereby protecting the region of highest optical gain and highest molecular concentration, as the input energy of the light beam (16) increases.

公开(公告)号：WO1991004573A2

公开(公告)日：1991-04-04

申请号：PCT/US1990004899

申请日：1990-08-29

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  BREWER, Peter, D. ,  ZINCK, Jennifer, J.

IPC: H01L21/465

CPC classification number: H01L21/461 ,  H01L21/428

Abstract: A pulsed beam (14) from an excimer laser (10) is used for precision ablation of cadmium telluride (CdTe) and other material (16) to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material (16), such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask (32) and optical system (40) onto a material (34) to form an image for patterned ablation. The optical system (40) may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.

公开(公告)号：WO1990013141A1

公开(公告)日：1990-11-01

申请号：PCT/US1990001553

申请日：1990-03-23

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  CHANG, Chen-Chi, P. ,  LIAO, Kuan, Y. ,  FARB, Joseph, E.

IPC: H01L21/86

CPC classification number: H01L21/86 ,  H01L21/2255 ,  Y10S148/031 ,  Y10S148/044

Abstract: Methods of fabricating heavily doped edges of mesa structures in silicon-on-sapphire and silicon-on-insulator semiconductor devices. The methods are self-aligning and require a minimum of masking steps to achieve. The disclosed methods reduce edge leakage and resolve N-channel threshold voltage instability problems. Mesa structures are formed that comprise N-channel and P-channel regions having a thermal oxide layer deposited thereover. A doping layer of borosilicate glass, or alternatively, an undoped oxide layer that is subsequently implanted, is deposited over the mesa structures. In the first method, the doping layer is etched by means of an anisotropic plasma etching procedure to form oxide spacers at the edges of the mesa structures. The doping layer is removed from the N-mesa structures using an N-channel mask and wet oxide etching procedure. The structure is then heated to a relatively high temperature to drive the dopant into the edges of the N-channel mesa structures. The protective layers are then removed by a wet etching procedure. The semiconductor device is fabricated to completion in a conventional manner thereafter. In the second method, a nitride layer is deposited over the mesa structures and thermal oxide layer. A thin oxide layer, which is generally deposited by means of a chemical vapor deposition procedure, is deposited over the silicon nitride layer. The formed structure is then processed to expose the N-channel mesa structures. This is accomplished using an N-well mask, the oxide layer is etched to expose the silicon nitride layer over the N-channel, and the nitride layer covering the N-channel is removed by means of hot phosphoric acid using the oxide layer as a mask. The doping layer is then deposited over the mesa structures. This doping layer is then heated to drive the dopant/implant into the edges of the N-channel mesa structures. The doping layer is then removed by wet oxide etching, the nitride layer is removed by rinsing in hot phosphoric acid and the thermal oxide layer is removed by a wet oxide etching procedure. The semiconductor device is again fabricated to completion in a conventional manner thereafter.

公开(公告)号：WO1990011621A1

公开(公告)日：1990-10-04

申请号：PCT/US1990000811

申请日：1990-02-16

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  SHELTON, Everett, Keith

IPC: H01L29/788

CPC classification number: H01L29/7883

Abstract: A floating gate transistor structure (20) including a semiconductor substrate (11), an access gate (17) dielectrically separated from the substrate (11), and a floating gate (21) having a first portion (21a) dielectrically separated from the substrate by a floating gate oxide region (23) and a tunnel oxide region (24) and a second portion (21b) at least partially overlying and dielectrically separated from the access gate (17). A metal control gate (31) overlies and is dielectrically separated from the floating gate (17). Also disclosed is a precision capacitor (30) having a doped region (111) as a first capacitor plate and a metal gate (113) as a second capacitor plate. The floating gate transistor structure (20) can be made with a process which includes the steps of forming a gate oxide layer on semiconductor substrate (11), forming an access gate (17) on the gate oxide layer, and forming an interpoly oxide layer over the access gate (17) and a floating gate oxide layer on the subtrate laterally adjacent the gate oxide. A tunnel oxide region (24) is formed in the floating gate oxide layer (23), and a floating gate (21) is then formed on the interpoly oxide, the floating gate oxide, and the tunnel oxide. An oxide layer is formed over the floating gate (21), and a metal control gate (31) is formed thereon. The precision capacitor (30) is advantageously made pursuant to certain of the foregoing steps.

公开(公告)号：WO1990007766A1

公开(公告)日：1990-07-12

申请号：PCT/US1989005618

申请日：1989-12-15

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  WU, Wei-Yu ,  HSU, Tsung, Y. ,  LACKNER, Anna, M. ,  SMITH, Willis, H., Jr.

IPC: G09F13/18

CPC classification number: G02B6/0031 ,  B60Q1/44 ,  G02B6/0041 ,  G02B6/0071 ,  G09F9/35 ,  G09F19/205 ,  G09F2013/0472 ,  G09F2013/185 ,  G09F2013/1854 ,  G09F2013/1868

Abstract: A light emitting panel (42) is formed of a transparent plastic substrate doped with fluorescent dye which absorbs incident light through a relatively large surface area and emits light of a longer wavelength out through one edge. The incident light may be ambient or produced by a fluorescent light source. The edge emitted light is optically coupled into an edge of a display panel (44), which may be a polymer dispersed liquid crystal display or a plastic panel having a display surface formed with an etched or printed pattern (56), grating or hologram. The substrate materials of the emitting and display panels, as well as an optical adhesive (52) which joins the edges thereof, preferably have an essentially similar index of refraction which is larger than that of air causing light propagating through the panels to be internally reflected and exit the structure only through the pattern on the display surface. The display panel is preferably transparent in the absence of light incident on the emitting panel, and produces a display visible from only one direction upon application of incident light. The display panel may be constituted as a center-high-mounted stop light for an automotive vehicle.