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公开(公告)号：KR1020150055869A
公开(公告)日：2015-05-22
申请号：KR1020130138393
申请日：2013-11-14
Applicant: (주)아이씨디
Inventor： 이승호
Abstract: 곡면유리몰딩장치개시된다. 이러한곡면유리몰딩장치는상부플레이트히터와하부플레이트히터에설치되어유리판을작업온도로유지한상태에서성형동작을수행한다. 상부플레이트히터와하부플레이트히터에는각각승강구동부가연결되어, 플레이트히터들과몰드들을승강시킨다. 상부몰드부에는진공라인부가연결되고, 하부몰드부에는고온기체분사라인부가연결된다. 이송장치가유리판을와이어망지그로지지한상태에서작업위치로진입시키면, 상부몰드부가하강하여유리판을흡착하여들어올리고, 지그는작업위치에서벗어난다. 그리고나서, 하부몰드부가상승하여고온기체를유리판에분사하여유리판을원하는형상으로성형한다.
Abstract translation: 本发明公开了一种弯曲玻璃成型装置。 弯曲玻璃成型装置安装在上板加热器和下板加热器上，以在保持操作温度的同时进行玻璃板的成型操作。 升降机驱动单元分别连接到上板和下板加热器以提升板加热器和模具。 真空管路单元连接到上模单元，高温气体喷射管单元连接到下模单元。 当转印单元用丝网夹具支撑玻璃板并将玻璃板输入到操作区域时，上模被提起以通过抽吸附接玻璃板，并且夹具离开操作区域。 然后，将下模单元提起以向玻璃板喷射高温气体，以将玻璃板成型为期望的形状。
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公开(公告)号：KR101299902B1
公开(公告)日：2013-08-23
申请号：KR1020110071475
申请日：2011-07-19
Applicant: (주)아이씨디
IPC: H01L21/3065 , H01L21/205 , H01L21/66
Abstract: 유도결합형 플라즈마 균일도 측정 장치 및 이를 이용한 측정 방법을 제공한다. 유도결합형 플라즈마 균일도 측정 장치 및 이를 이용한 측정 방법은 유도결합형 플라즈마 발생장치의 유전체 창의 상부에 연결되는 복수개의 측광 케이블 및 상기 복수개의 측광 케이블에 연결된 광량 측정기를 포함하는 유도결합형 플라즈마 소스의 공간 균일도 측정 장치를 포함한다. 따라서 간접 측정 방식을 이용하여 대면적의 유도 결합형 플라즈마 소스의 기판 전체 면에 대한 공간적인 플라즈마 균일도를 평가할 수 있다. 또한, 공간적인 플라즈마 균일도 측정이 직접 진공 챔버 내에서 측정되는 것이 아닌 관계로 플라즈마 턴온시의 플라즈마 균일도를 거의 실시간에 가깝게 평가 할 수 있다. 따라서, 유도 결합형 플라즈마 소스의 공간적인 균일도 조정을 용이하게 수행할 수 있다.
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公开(公告)号：KR100856552B1
公开(公告)日：2008-09-04
申请号：KR1020070061046
申请日：2007-06-21
Applicant: (주)아이씨디
Inventor： 이혁범
IPC: H01L21/027 , H01L21/3065
CPC classification number: H01L21/0274 , G03F7/36 , H01L21/0275 , H01L21/30655
Abstract: A plasma processing apparatus is provided to remove effectively photoresist from a substrate by reducing non-uniformity of a substrate or a substrate holding unit. A decompression vessel(210) is formed to define an internal space for generating plasma. A plasma generator(220) is formed to generate the plasma. An upper plate(230) is positioned under the plasma generator. The upper plate includes at least two or more dielectric plates(235). A substrate holding unit(240) is positioned in the inside of the decompression vessel in order to prevent non-uniformity of temperature caused by the separation of the dielectric plates. The substrate holding unit includes a lower electrode(242) arranged on a substrate, a heating part(246) arranged in a space between the dielectric plates in order to compensate the non-uniformity of the temperature of the lower electrode, and a base part(244) positioned under the lower electrode.
Abstract translation: 提供等离子体处理装置，通过降低基板或基板保持单元的不均匀性而有效地从基板去除光致抗蚀剂。 减压容器（210）被形成以限定用于产生等离子体的内部空间。 形成等离子体发生器（220）以产生等离子体。 上板（230）位于等离子体发生器下方。 上板包括至少两个或更多个电介质板（235）。 衬底保持单元（240）位于减压容器的内部，以防止电介质板分离引起的温度不均匀。 基板保持单元包括布置在基板上的下电极（242），布置在电介质板之间的空间中的加热部分（246），以补偿下电极的温度的不均匀性;以及基部 （244）位于下电极下方。
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公开(公告)号：KR100849394B1
公开(公告)日：2008-07-31
申请号：KR1020070021792
申请日：2007-03-06
Applicant: (주)아이씨디
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01J37/32532 , H01J37/32651
Abstract: A plasma processing apparatus having an insulating member capable of adjusting a height is provided to freely control a height of a horizontal insulating member by forming one or more taps in the horizontal insulating member. An RF(Radio Frequency) power source for plasma generation is electrically connected to an upper electrode. A lower electrode(14) is arranged to be opposite to the upper electrode. An RF power source for a bias generation is electrically connected to the lower electrode. A horizontal insulating member(24) is arranged at an upper side of an edge of the lower electrode. The horizontal insulating member includes one or more taps for controlling a height. A first vertical insulating member(26) is arranged to be adjacent to a side of the lower electrode. A second vertical insulating member(28) is arranged to be separated from the first vertical insulating member in a direction apart from the lower electrode. One or more coupling units inserted into the tap are extended toward the first vertical insulating member.
Abstract translation: 提供具有能够调节高度的绝缘构件的等离子体处理装置，以通过在水平绝缘构件中形成一个或多个抽头来自由地控制水平绝缘构件的高度。 用于等离子体产生的RF（射频）电源电连接到上电极。 下电极（14）布置成与上电极相对。 用于偏置产生的RF电源电连接到下电极。 水平绝缘构件（24）布置在下电极的边缘的上侧。 水平绝缘构件包括用于控制高度的一个或多个抽头。 第一垂直绝缘构件（26）布置成与下电极的一侧相邻。 第二垂直绝缘构件（28）布置成在与下电极分开的方向上与第一垂直绝缘构件分离。 插入到龙头中的一个或多个联接单元朝向第一垂直绝缘构件延伸。
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公开(公告)号：KR1020080016136A
公开(公告)日：2008-02-21
申请号：KR1020060077838
申请日：2006-08-17
Applicant: (주)아이씨디
CPC classification number: H05H1/46 , H01J37/321 , H01J37/32165
Abstract: An antenna of a plasma processing apparatus is provided to form plasma having a uniform density required in a plasma process of a substrate. An antenna of a plasma processing apparatus includes a first wiring group(100) formed from an internal region(10) to a middle region(20). A second wiring group(200) is formed from the middle region to an outline region(30). The first wiring group transmits an electric power of a first radio frequency power source from the middle region to the internal region. The second wiring group transmits an electric power of a second radio frequency power source from the middle region to the outline region. The first wiring group includes a first wiring(110) formed from the middle region to the internal region. A second wiring(120) is arranged according to a center point of the antenna for the first wiring to be rotated by 180°.
Abstract translation: 提供等离子体处理装置的天线，以形成在基板的等离子体工艺中所需的均匀密度的等离子体。 等离子体处理装置的天线包括从内部区域（10）到中间区域（20）形成的第一布线组（100）。 第二配线组（200）从中间区域形成为轮廓区域（30）。 第一配线组将第一射频电源的电力从中间区域发送到内部区域。 第二配线组将第二射频电源的电力从中间区域发送到轮廓区域。 第一布线组包括从中间区域到内部区域形成的第一布线（110）。 根据天线的中心点将第二布线（120）布置成使第一布线旋转180°。
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Patent Agency Ranking
公开(公告)号：KR1020060110046A
公开(公告)日：2006-10-24
申请号：KR1020050032184
申请日：2005-04-19
Applicant: (주)아이씨디
IPC: H01L21/306 , H01L21/205
CPC classification number: H01J37/3244 , H01J37/32513
Abstract: A shower head and a plasma processing apparatus using the same are provided to improve the uniformity of reaction without over-etching or over-ashing by controlling the density of plasma using an improved position of a gas spraying hole. A shower head(33) for a plasma processing apparatus comprises a spraying hole forming region(H). The spraying hole forming region is composed of a plurality of spraying holes. The plurality of spraying holes are arranged under a base electrode and a baffle electrode to spray a reaction gas onto an object substrate. The spraying hole forming region is smaller than the object substrate. A first peripheral portion of the spraying hole forming region is arranged within a second peripheral portion of the object substrate.
Abstract translation: 提供一种喷头和使用其的等离子体处理装置，以通过使用改进的气体喷射孔的位置来控制等离子体的密度来提高反应的均匀性而不会过度蚀刻或过度灰化。 用于等离子体处理装置的喷淋头（33）包括喷孔形成区域（H）。 喷孔形成区域由多个喷孔构成。 多个喷射孔布置在基底电极和挡板电极下方以将反应气体喷射到对象基板上。 喷射孔形成区域比对象基板小。 喷射孔形成区域的第一周边部分布置在对象基板的第二周边部分内。
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公开(公告)号：KR1020060010125A
公开(公告)日：2006-02-02
申请号：KR1020040058720
申请日：2004-07-27
Applicant: (주)아이씨디
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01J37/32467 , H01J37/32477 , H01J37/32743 , H01J37/32788
Abstract: 본 발명은 알루미늄 플라즈마 챔버 및 그 제조 방법에 관한 것으로서, 챔버를 구성하는 챔버 뚜껑, 챔버 벽, 및 챔버 바닥을 별도로 가공하여 볼트와 같은 체결부재에 의해 체결함과 동시에, 상기 챔버 뚜껑, 벽, 및 바닥간의 결합부분에는 오링과 같은 실링부재와 전도성부재를 삽입함으로써 챔버의 기밀성과 전기전도성을 유지하면서 동시에 알루미늄 챔버 제조 비용 및 제조 시간을 줄이며, 표면 처리를 더 좋게 할 수 있는 알루미늄 플라즈마 챔버 및 그 제조 방법에 관한 것이다.
플라즈마, 진공장치, 알루미늄 챔버, 오링, 스파이럴 쉴드-
38.发明公开플라즈마를 이용하여 네가티브 포토레지스트가 형성된글라스 기판 위에 도포된 폴리이미드 유기 배향막을선택적으로 제거하고 글라스 기판을 재생하는 방법 无效用于选择性地去除聚酰亚胺有机配对层的方法，该方法适用于透明玻璃基板上使用等离子体形成阴离子的玻璃基材
公开(公告)号：KR1020040074428A
公开(公告)日：2004-08-25
申请号：KR1020030010183
申请日：2003-02-18
Applicant: (주)아이씨디
IPC: G02F1/13
CPC classification number: G02F1/133723 , G02F2001/1316
Abstract: PURPOSE: A method for selectively removing a polyimide organic alignment layer applied to a glass substrate where a negative photoresist is formed by using plasma while reproducing the glass substrate is provided to selectively remove a polyimide organic alignment layer only applied to a negative photoresist by using dry plasma, thereby effectively reproducing a substrate. CONSTITUTION: A polyimide organic alignment layer(102) is applied to a negative photoresist forming glass substrate. The negative photoresist forming glass substrate is injected into a reaction chamber(10) while maintaining pressure at 100 to 900mTorr. The pressure is maintained by injecting O2/N2 mixed gases within the reaction chamber(10). Plasma is generated by applying power to an electrode of a plasma reaction device. The polyimide organic alignment layer(102) is selectively dissolved.
Abstract translation: 目的：提供一种用于选择性去除涂覆在玻璃基板上的聚酰亚胺有机取向层的方法，其中通过在再生玻璃基板时使用等离子体形成负性光致抗蚀剂，以选择性地除去仅通过使用干燥的涂料施加到负性光致抗蚀剂上的聚酰亚胺有机取向层 等离子体，从而有效地再现基板。 构成：将聚酰亚胺有机取向层（102）施加到负成像玻璃基板上。 将负性光致抗蚀剂形成用玻璃基板注入反应室（10），同时保持压力为100〜900mTorr。 通过在反应室（10）内注入O 2 / N 2混合气体来维持压力。 通过向等离子体反应装置的电极施加电力而产生等离子体。 选择性地溶解聚酰亚胺有机取向层（102）。
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公开(公告)号：KR1020030085932A
公开(公告)日：2003-11-07
申请号：KR1020020024239
申请日：2002-05-02
Applicant: (주)아이씨디
Inventor： 이승호
IPC: H05H1/34
Abstract: PURPOSE: A structure of a plasma generation antenna including an inductive antenna and a plasma generator using an inductive antenna are provided to form uniformly the non-uniform RF(Radio Frequency) field due to a coil antenna by using additionally an inductive antenna. CONSTITUTION: A structure of a plasma generation antenna including an inductive antenna includes a coil antenna(110), an inductive antenna(120), and a dielectric. The coil antenna(110) is installed nearly to the outside of a vacuum chamber in order to generate RF(Radio Frequency) signals by means of RF power. The inductive antenna(120) is used for covering a part of the coil antenna(110) in order to induct the RF signals. The dielectric is used for filling a gap between the coil antenna(110) and the inductive antenna(120). The structure of the plasma generation antenna including the inductive antenna further includes a compensation antenna(130). The compensation antenna(130) is installed at the outside of the coil antenna(110) to receive the induced RF power.
Abstract translation: 目的：提供一种包括感应天线和使用感应天线的等离子体发生器的等离子体发生天线的结构，以通过另外使用感应天线由线圈天线均匀地形成不均匀的RF（射频）场。 构成：包括感应天线的等离子体产生天线的结构包括线圈天线（110），感应天线（120）和电介质。 线圈天线（110）几乎安装在真空室的外部，以通过RF功率产生RF（射频）信号。 感应天线（120）用于覆盖线圈天线（110）的一部分以便感应RF信号。 电介质用于填充线圈天线（110）和感应天线（120）之间的间隙。 包括感应天线的等离子体生成天线的结构还包括补偿天线（130）。 补偿天线（130）安装在线圈天线（110）的外部，以接收感应的RF功率。
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