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公开(公告)号：KR1020160136766A
公开(公告)日：2016-11-30
申请号：KR1020150070748
申请日：2015-05-21
Applicant: (주)티피에스
IPC: C04B35/48
Abstract: 본발명은나노분말을이용한초고온용지르코니아내화재에관한것으로, 지르코니아(ZrO) 100중량부에대하여산화규소(SiO) 1 ~ 2중량부를함유하는입자크기 325mesh(0.043㎜) 이하의원료분말 70 ~ 99.9중량%에대하여, 입자크기가 10 ~ 1,000nm인지르코니아(ZrO) 나노분말을 0.1 ~ 30중량% 범위로포함하고있으며, 상기원료분말은큐빅지르코니아(Cubic-ZrO) 상태로이루어지고, 상기지르코니아내화재는밀도가 3.2 ~ 4.0g/㎤정도의범위로소결되는것을특징으로한다. 본발명의나노분말을이용한초고온용지르코니아내화재는입도가 325mesh(0.043㎜) 이하의지르코니아분말에계면에너지가불안한지르코니아나노분말을바인더로사용하여다양한모양의내화재를성형및 소결함으로써 2,000℃이상의초고온에서도낮은열전도도와우수한내열성, 내화성및 경량성등을발휘하는효과가있다. 또한, 본발명은내화재제작시에액상소결되는유기또는무기바인더및 탄소성분을함유하지않고모상과동일한성분인지르코니아나노분말이모상을결합해주는역할을하기때문에저융점성분이고온에서휘발하여로(爐) 내의오염원으로작용하는문제점을원천적으로방지하는장점이있다.
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公开(公告)号：KR1020160048378A
公开(公告)日：2016-05-04
申请号：KR1020140144820
申请日：2014-10-24
Applicant: (주)티피에스
IPC: C01B31/04
CPC classification number: C01B32/184 , C01B2204/00
Abstract: 본발명은초음파를이용하여반응시간을획기적으로단축시키는것을특징으로하는그래핀옥사이드의제조방법및 그제조장치에관한것으로서, 더욱구체적으로는반응기에그래파이트(Graphite) 및산을투입하고 1차반응시킨후, 초음파진동을가함으로써단시간내에그래핀옥사이드를생산하는방법에관한것이다. 본발명에따른그래핀옥사이드의제조방법은초음파진동막대가구비된장치를이용하여반응시간을획기적으로단축시킴으로써그래핀옥사이드의생산당생산량이증가하여대량생산이가능한장점이있다. 또한, 필터를이용하여간단하게반응물의정제가가능함으로써종래기술에비해비용이저렴한경제적특징이있다.
Abstract translation: 本发明涉及用于制造氧化石墨烯的方法和装置，其能够通过使用超声波来显着地减少反应时间。 更具体地，该方法包括：将石墨和酸进料到反应器中以进行第一反应; 并施加超声波振动以在短时间内制造氧化石墨烯。 根据本发明的方法可以通过使用设置有超声波振动棒的装置来显着地减少反应时间，以增加每次生产中的氧化石墨烯的输出，从而可以实现批量生产。 此外，由于通过使用过滤器简单地改进反应物，所以与常规技术相比，该方法可以以低成本经济地进行。
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公开(公告)号：KR101426388B1
公开(公告)日：2014-08-05
申请号：KR1020130066508
申请日：2013-06-11
Applicant: (주)티피에스
Abstract: The present invention relates to an alumina sintering furnace structure that sinters high purity alumina used for single crystal growth, and the alumina sintering furnace structure includes: a chamber; a pot furnace for receiving alumina powder to the chamber to conduct the sintering for the alumina powder; heating means having a heating material adapted to emit high temperature heat for the alumina sintering to the pot furnace, the heating material producing the heat if power is supplied thereto by means of a terminal; a first reflection plate adapted to reflect the high temperature heat emitted from the heating means around the heating means onto the pot furnace; and vacuum means connected to the interior of the chamber to maintain the interior of the chamber to a vacuum state and to accelerate the alumina sintering. Accordingly, through the formation of the heating means formed of the heating material made of tungsten or molybdenum and the first reflection plate made of yttria-stabilized zirconia, the alumina powder can be sintered to a high temperature within a short period of time, thus remarkably reducing the work time, improving the productivity and minimizing the production cost, without having any separate high expensive equipment. Further, the alumina powder can be sintered at the high temperature, thus achieving tight tissues to suppress the formation of bubbles acting as a main defect upon the formation of single crystal, improving the purity of the alumina itself to remove the impurities from the single crystal, and providing a high quality aluminum product advantageous to the single crystal growth.
Abstract translation: 本发明涉及烧结用于单晶生长的高纯度氧化铝的氧化铝烧结炉结构，氧化铝烧结炉结构包括：室; 用于将氧化铝粉末接收到所述室以进行氧化铝粉末的烧结的锅炉; 加热装置，其具有适于向用于氧化铝烧结到锅炉的高温热量的加热材料，所述加热材料在通过端子供电的情况下产生热量; 第一反射板，其适于将来自加热装置的加热装置发出的高温热量反射到加热装置上; 以及连接到室的内部的真空装置，以将室的内部保持在真空状态并加速氧化铝烧结。 因此，通过形成由钨或钼制成的加热材料形成的加热装置和由氧化钇稳定的氧化锆制成的第一反射板，氧化铝粉末可以在短时间内烧结到高温，因此显着地 减少工作时间，提高生产率和最小化生产成本，而不需要任何单独的昂贵的设备。 此外，氧化铝粉末可以在高温下烧结，从而获得紧密的组织以抑制在形成单晶时作为主要缺陷的气泡的形成，提高氧化铝本身的纯度以从单晶中除去杂质 ，并提供有利于单晶生长的高品质铝产品。
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公开(公告)号：KR101399120B1
公开(公告)日：2014-05-27
申请号：KR1020140029916
申请日：2014-03-13
Abstract: The present relates to a power converter including first and second capacitors connected in series between a DC positive line and a DC negative line. The power converter includes a T-type 3-level half-bridge PWM rectifier connected between the DC positive and negative lines and neutral points of the first and second capacitors to convert AC power from an AC power supply into DC power; a reference current generator connected with the T-type 3-level half-bridge PWM rectifier in parallel between the DC positive and negative lines and the neutral points of the first and second capacitors to converter the DC power into the AC power and to supply the AC power to a load; a DC output voltage controller of the T-type 3-level half-bridge PWM rectifier including an input current controller for receiving an output value of the reference current generator to generate a digital duty rate and a PWM combiner for receiving the digital duty rate to output the PWM signal; and an inverter controller of the T-type 3-level half-bridge PWM rectifier including an AC voltage controller for generating a digital duty rate value by using DC output voltage of the T-type 3-level half-bridge PWM rectifier and a PWM combiner for receiving the digital duty rate value of the AC voltage controller to output the PWM signal.
Abstract translation: 本发明涉及一种功率转换器，包括串联连接在DC正极线和直流负极线之间的第一和第二电容器。 电源转换器包括连接在直流正负极线和第一和第二电容器的中性点之间的T型3级半桥PWM整流器，用于将来自交流电源的交流电转换成直流电; 与T型3级半桥PWM整流器并联连接在直流正负极线和第一和第二电容器的中性点之间的参考电流发生器，以将直流电力转换成交流电源并提供 交流电源到负载; T型3级半桥PWM整流器的DC输出电压控制器包括输入电流控制器，用于接收参考电流发生器的输出值以产生数字占空比，以及PWM组合器，用于接收数字占空比 输出PWM信号; 以及T型3级半桥PWM整流器的逆变器控制器，其包括用于通过使用T型3电平半桥PWM整流器的直流输出电压产生数字占空比值的AC电压控制器和PWM 组合器，用于接收交流电压控制器的数字占空比值以输出PWM信号。
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公开(公告)号：KR1020140028918A
公开(公告)日：2014-03-10
申请号：KR1020120096299
申请日：2012-08-31
Applicant: (주)티피에스
IPC: C09K3/14
Abstract: The present invention relates to a composition for a polishing member, a polishing member comprising the same, and a method for manufacturing the same, and the composition for a polishing member according to an embodiment of the present invention comprises: a metal alloy matrix having a plurality of gaps on the surface and having hard particles attached to the gaps; and a polymer binder combined to the metal alloy matrix.
Abstract translation: 本发明涉及一种用于抛光部件的组合物，包含该组合物的抛光部件及其制造方法，以及根据本发明实施方式的用于抛光部件的组合物，其包括：金属合金基体，其具有 在表面上具有多个间隙，并且具有附着到间隙的硬质颗粒; 和与金属合金基体组合的聚合物粘合剂。
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Patent Agency Ranking
公开(公告)号：KR101329998B1
公开(公告)日：2013-11-15
申请号：KR1020120051265
申请日：2012-05-15
Applicant: (주)티피에스
CPC classification number: G01N27/125 , H01M10/48
Abstract: The invention relates to a gas sensor for detecting sulfur compounds at low temperatures and a desulfurization system for fuel cell having thereof and, particularly, to a desulfurization system for fuel cell having a gas sensor, which is operated at low temperatures, for detecting whether there is presence of organic sulfur compounds, which is included in a city gas etc. as an odorant, from a change of resistance and a current according to supply of gas, and for checking a life span of each absorption column and whether to replace each absorption column because the gas sensor is installed between multiple absorption columns. The gas sensor for detecting sulfur compounds in low temperatures according to the invention is capable of detecting easily sulfur compounds among sulfides used as an odorant at each interval between multiple absorption columns comprising the desulfurizer for low temperatures adhesion type fuel cell. Also, the desulfurization system for fuel cell having the gas sensor according to the invention is capable of performing a desulfurization process simply and economically by informing immediately information about whether to replace an absorber, and a limit absorption state of an absorber for a desulfurization, which is positioned inside the desulfurization absorption column.
Abstract translation: 本发明涉及一种用于在低温下检测硫化合物的气体传感器及其具有燃料电池的脱硫系统，特别涉及一种具有气体传感器的燃料电池的脱硫系统，该气体传感器在低温下运行，用于检测是否存在 存在作为气味剂的城市气体等中包含的有机硫化合物，根据气体供给的电阻和电流的变化，以及用于检查每个吸收塔的寿命以及是否取代每个吸收 因为气体传感器安装在多个吸收柱之间。 根据本发明的用于检测低温硫化合物的气体传感器能够容易地在包含用于低温粘附型燃料电池的脱硫器的多个吸收塔之间的每个间隔处用作用于气味剂的硫化物中的硫化合物。 此外，具有本发明的气体传感器的燃料电池用脱硫系统能够简单，经济地通过立即通知关于是否更换吸收器的信息和脱硫用吸收体的限制吸收状态来进行脱硫处理， 位于脱硫吸收塔内。
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公开(公告)号：KR101272209B1
公开(公告)日：2013-06-11
申请号：KR1020120030252
申请日：2012-03-23
Applicant: (주)티피에스
Inventor： 송제중
CPC classification number: B65F1/12 , A44C21/00 , B65F1/14 , B65F1/1638 , B65F2210/1085
Abstract: PURPOSE: A food waste disposal container equipped with a cover part having an automatic discharge device is provided to sanitarily discharge food waste without secondary contamination due to food waste. CONSTITUTION: A food waste disposal container comprises a body(100), a cover part body(200), and a cover part. The body is a container shape to collect food waste. A door(210) for accessing a collecting container is formed in the front side of the cover part body. The cover part body is coupled to the top of the body. The cover part is arranged inside the cover part body and comprises a support(340), an elastic body, and an automatic food waste discharge part.
Abstract translation: 目的：提供一种装有自动排放装置的盖部件的食物垃圾处理容器，以便对食物垃圾进行卫生排放，而不会由于食物废物而被二次污染。 构成：食物垃圾处理容器包括主体（100），盖部件主体（200）和盖部。 身体是收集食物垃圾的容器形状。 用于进入收集容器的门（210）形成在盖部件主体的前侧。 盖部件主体联接到主体的顶部。 盖部件布置在盖部件主体内部，并且包括支撑件（340），弹性体和自动食物垃圾排放部件。
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公开(公告)号：KR1020110123873A
公开(公告)日：2011-11-16
申请号：KR1020100043331
申请日：2010-05-10
Applicant: 한국산업기술대학교산학협력단 , (주)티피에스
IPC: H01L21/301 , H01L21/78
CPC classification number: B24B27/0633 , B28D5/045
Abstract: PURPOSE: A texturing apparatus of a wire for semiconductor material cutting is provided to prevent the occurrence of a disconnection by coating grinding particles in a state of forming texture on the wire. CONSTITUTION: The texturing apparatus of a wire comprises a base plate(20). Connection bolts are installed on the four corners of the base plate. A guide bar is installed on the four corners of the base plate in a vertical direction. A bottom plate(30) installed on the top of the base plate. A top bobbin frame(42) is pivotally installed on the top of the bottom plate. A top plate(40) is ascended and descended corresponding to the bottom plate. A bottom bobbin frame(32) is pivotally installed in the lower part of the top plate. A diamond cutter(60) is installed in a wire fitting groove. The diameter of the diamond cutter is 0.1-0.2mm.
Abstract translation: 目的：提供一种用于半导体材料切割的导线的纹理装置，以防止在线上形成纹理的状态下通过涂覆研磨颗粒而发生断开。 构成：电线的纹理装置包括基板（20）。 连接螺栓安装在底板的四个角上。 导杆在垂直方向安装在底板的四个角上。 安装在基板顶部的底板（30）。 顶部骨架框架（42）枢转地安装在底板的顶部上。 顶板（40）对应于底板上升和下降。 底架（32）枢转地安装在顶板的下部。 金刚石切割器（60）安装在线材嵌合槽中。 金刚石刀具的直径为0.1-0.2mm。
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公开(公告)号：KR1020110116918A
公开(公告)日：2011-10-26
申请号：KR1020100036597
申请日：2010-04-20
Applicant: (주)티피에스
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/04
Abstract: 본 발명은, 와이어 형상의 실리콘을 제작할 수 있는 와이어 형상의 태양전지용 실리콘 제작 장치 및 와이어 형상의 태양전지용 실리콘 제작 방법에 관한 것이다. 따라서, 본 발명에서는 태양전지의 효율이 향상되는 동시에 제작 공정이 더욱 단순해지고, 제작 비용이 절감되며, 태양전지의 대면적화가 용이한 이점이 있다. 그리고, 예를 들면, 단결정, 비정질, 다결정 등과 같은 상기 실리콘의 성질에 따라 가장 적합한 제작 장치 및 제작 방법이 사용될 수 있는 이점이 있다.
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公开(公告)号：KR1020100125746A
公开(公告)日：2010-12-01
申请号：KR1020090044594
申请日：2009-05-21
Applicant: (주)티피에스 , 한국산업기술대학교산학협력단
IPC: B21F17/00 , B21F19/00 , C09D133/08 , B26F3/00
CPC classification number: B21F19/00 , B05D3/061 , C09D133/08
Abstract: PURPOSE: A method of manufacturing a diamond wire for processing semiconductor materials and a diamond wire manufactured by the same are provided to minimize the contamination of materials due to slurry by employing a diamond wire in which diamond abrasive particles used in multi-wire saw cutting are attached to a wire. CONSTITUTION: A method of manufacturing a diamond wire for processing semiconductor materials comprises steps of: feeding a wire(S1), coating a UV hardener on the surface of a wire(S2), attaching diamond particles to the surface of the wire in which the UV hardener is spread(S3), and hardening the UV hardener(S5). The wire feed step includes a cleaning process for removing organic materials or other foreign substances from the surface of a wire, a heat treatment process for heat-treating the wire at 100°C-130°C, and a surface activation process for passing the wire through diluted acid solution of 5%-20%.
Abstract translation: 目的：提供一种制造用于处理半导体材料的金刚丝线和由其制造的金刚石线的方法，以通过使用金刚石线来最小化由于浆料而导致的材料的污染，其中用于多线锯切割的金刚石磨粒是 附在电线上。 构成：制造用于处理半导体材料的金刚丝线的方法包括以下步骤：馈送线（S1），在线表面上涂覆UV固化剂（S2），将金刚石颗粒附着到线的表面，其中 紫外线固化剂扩散（S3），硬化紫外线硬化剂（S5）。 送丝步骤包括从线材表面除去有机材料或其它异物的清洁工艺，用于在100℃-130℃下对线材进行热处理的热处理工艺和用于使线 电线通过稀酸溶液5％-20％。
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