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公开(公告)号：KR1020110088953A
公开(公告)日：2011-08-04
申请号：KR1020100008710
申请日：2010-01-29
Applicant: (주)티피에스 , 재단법인 대구테크노파크
IPC: H01L21/66
Abstract: PURPOSE: A wafer surface inspection is provided to improve the accuracy of a surface analysis in wafer by emitting the right which is emitted from a light source of an optical microscope as an angle of incidence of a prescribed range which is not perpendicularity. CONSTITUTION: A supporting plate(10) is located at the lower part of a projection lens of an optical microscope. A search point controlling part(20) is connected to the upper part of the supporting plate. A wafer which inspects a surface is horizontally arranged on the search point controlling part. The search point controlling part controls a search point about a wafer surface of the right which is emitted from the optical microscope through the projection lens. A search angle controlling part(30) is connected to between the search spot controlling part and the supporting plate and controls a search angle about a search spot of the right.
Abstract translation: 目的：提供晶片表面检查，通过发射从光学显微镜的光源发射的权利作为不是垂直度的规定范围的入射角来提高晶片中的表面分析的精度。 构成：支撑板（10）位于光学显微镜的投影透镜的下部。 搜索点控制部分（20）连接到支撑板的上部。 检查表面的晶片水平地布置在搜索点控制部分上。 搜索点控制部分控制通过投影透镜从光学显微镜发射的关于右侧的晶片表面的搜索点。 搜索角度控制部分（30）连接到搜索点控制部分和支撑板之间，并控制关于右侧搜索点的搜索角度。
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Patent Agency Ranking
公开(公告)号：KR101524748B1
公开(公告)日：2015-06-02
申请号：KR1020130166721
申请日：2013-12-30
Applicant: (주)티피에스
Abstract: 본발명은단결정성장로히터용전극냉각용냉각수관로구조에관한것으로서, 구체적으로는일반적인단결정성장로에서공정조건으로중요한위치를차지하는관로내 온도분포를단결정공정에맞게개선하기위한것으로단결정성장로의도가니온도분포개선을위해히터용전극내 냉각수관로구조를새로이구성한단결정성장로히터용전극냉각용냉각수관로구조에관한것이다. 본발명은단결정성장로의히터용전극내 냉각수관로구조의개선을통해전극의온도분포개선을통해히터의온도분포를일정하게유지하도록함으로써단결정성장에필요한도가니의온도분포를고르게형성시키도록할 수있다는장점이있다.
Abstract translation: 本发明涉及一种用于冷却单晶生长炉加热器的电极的冷却剂管结构，更具体地说，涉及一种用于冷却用于单晶生长炉加热器的电极的冷却剂管结构，其电极中的冷却剂管结构用作加热器 改进以改善单晶生长炉的坩埚中的温度分布，并且根据单晶工艺改善管中的温度分布，因为冷却剂管是单晶生长炉的工艺条件中的重要位置。 用于单晶生长炉的加热器的电极中的冷却剂管的结构改进被允许改善电极的温度分布并保持加热器中的温度分布，从而均匀地形成加热器的温度分布，这是需要增长的 单晶生长。
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公开(公告)号：KR101426388B1
公开(公告)日：2014-08-05
申请号：KR1020130066508
申请日：2013-06-11
Applicant: (주)티피에스
Abstract: The present invention relates to an alumina sintering furnace structure that sinters high purity alumina used for single crystal growth, and the alumina sintering furnace structure includes: a chamber; a pot furnace for receiving alumina powder to the chamber to conduct the sintering for the alumina powder; heating means having a heating material adapted to emit high temperature heat for the alumina sintering to the pot furnace, the heating material producing the heat if power is supplied thereto by means of a terminal; a first reflection plate adapted to reflect the high temperature heat emitted from the heating means around the heating means onto the pot furnace; and vacuum means connected to the interior of the chamber to maintain the interior of the chamber to a vacuum state and to accelerate the alumina sintering. Accordingly, through the formation of the heating means formed of the heating material made of tungsten or molybdenum and the first reflection plate made of yttria-stabilized zirconia, the alumina powder can be sintered to a high temperature within a short period of time, thus remarkably reducing the work time, improving the productivity and minimizing the production cost, without having any separate high expensive equipment. Further, the alumina powder can be sintered at the high temperature, thus achieving tight tissues to suppress the formation of bubbles acting as a main defect upon the formation of single crystal, improving the purity of the alumina itself to remove the impurities from the single crystal, and providing a high quality aluminum product advantageous to the single crystal growth.
Abstract translation: 本发明涉及烧结用于单晶生长的高纯度氧化铝的氧化铝烧结炉结构，氧化铝烧结炉结构包括：室; 用于将氧化铝粉末接收到所述室以进行氧化铝粉末的烧结的锅炉; 加热装置，其具有适于向用于氧化铝烧结到锅炉的高温热量的加热材料，所述加热材料在通过端子供电的情况下产生热量; 第一反射板，其适于将来自加热装置的加热装置发出的高温热量反射到加热装置上; 以及连接到室的内部的真空装置，以将室的内部保持在真空状态并加速氧化铝烧结。 因此，通过形成由钨或钼制成的加热材料形成的加热装置和由氧化钇稳定的氧化锆制成的第一反射板，氧化铝粉末可以在短时间内烧结到高温，因此显着地 减少工作时间，提高生产率和最小化生产成本，而不需要任何单独的昂贵的设备。 此外，氧化铝粉末可以在高温下烧结，从而获得紧密的组织以抑制在形成单晶时作为主要缺陷的气泡的形成，提高氧化铝本身的纯度以从单晶中除去杂质 ，并提供有利于单晶生长的高品质铝产品。
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公开(公告)号：KR1020100125746A
公开(公告)日：2010-12-01
申请号：KR1020090044594
申请日：2009-05-21
Applicant: (주)티피에스 , 한국산업기술대학교산학협력단
IPC: B21F17/00 , B21F19/00 , C09D133/08 , B26F3/00
CPC classification number: B21F19/00 , B05D3/061 , C09D133/08
Abstract: PURPOSE: A method of manufacturing a diamond wire for processing semiconductor materials and a diamond wire manufactured by the same are provided to minimize the contamination of materials due to slurry by employing a diamond wire in which diamond abrasive particles used in multi-wire saw cutting are attached to a wire. CONSTITUTION: A method of manufacturing a diamond wire for processing semiconductor materials comprises steps of: feeding a wire(S1), coating a UV hardener on the surface of a wire(S2), attaching diamond particles to the surface of the wire in which the UV hardener is spread(S3), and hardening the UV hardener(S5). The wire feed step includes a cleaning process for removing organic materials or other foreign substances from the surface of a wire, a heat treatment process for heat-treating the wire at 100°C-130°C, and a surface activation process for passing the wire through diluted acid solution of 5%-20%.
Abstract translation: 目的：提供一种制造用于处理半导体材料的金刚丝线和由其制造的金刚石线的方法，以通过使用金刚石线来最小化由于浆料而导致的材料的污染，其中用于多线锯切割的金刚石磨粒是 附在电线上。 构成：制造用于处理半导体材料的金刚丝线的方法包括以下步骤：馈送线（S1），在线表面上涂覆UV固化剂（S2），将金刚石颗粒附着到线的表面，其中 紫外线固化剂扩散（S3），硬化紫外线硬化剂（S5）。 送丝步骤包括从线材表面除去有机材料或其它异物的清洁工艺，用于在100℃-130℃下对线材进行热处理的热处理工艺和用于使线 电线通过稀酸溶液5％-20％。
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公开(公告)号：KR1020130003354A
公开(公告)日：2013-01-09
申请号：KR1020110064659
申请日：2011-06-30
Applicant: (주)티피에스
Abstract: PURPOSE: An apparatus for growing a single crystal is provided to maintain a proper temperature for growing the single crystal in a chamber for growing the single crystal by automatically controlling the flow of cooling water inputted to the chamber. CONSTITUTION: A cooling water manufacturing device(100) constantly controls the temperature of cooling water and discharges the cooling water. A cooling water distributing unit(200) distributes cooling water supplied from the cooling water manufacturing device. A chamber(400) for growing a single crystal includes one or more water cooling tubes. A cooling water supply tube(300) transfers the distributed cooling water to the water cooling tube. A flow control device(320) is buried in the cooling water supply tube.
Abstract translation: 目的：提供用于生长单晶的装置，以通过自动控制输入到室的冷却水的流动来维持用于在用于生长单晶的室中生长单晶的适当温度。 构成：冷却水制造装置（100）不断控制冷却水的温度并排出冷却水。 冷却水分配单元（200）分配从冷却水制造装置供给的冷却水。 用于生长单晶的室（400）包括一个或多个水冷却管。 冷却水供给管（300）将分配的冷却水输送到水冷却管。 流量控制装置（320）埋在冷却水供给管中。
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公开(公告)号：KR101092203B1
公开(公告)日：2011-12-09
申请号：KR1020090044594
申请日：2009-05-21
Applicant: (주)티피에스 , 한국산업기술대학교산학협력단
IPC: B21F17/00 , B21F19/00 , C09D133/08 , B26F3/00
Abstract: 본발명은, 반도체재료가공용다이아몬드와이어제조방법및 이를통해제작된다이아몬드와이어에관한것으로서, 와이어의표면에 UV 경화제를도포하고, UV 경화제가도포된와이어의표면에다이아몬드입자를부착한다음, UV 경화제를경화시키는방식으로다이아몬드와이어를제작함으로써, 종래슬러리로인한피절단재와기자재오염을최소화할 수있고, 폐슬러리의처리문제도해소할수 있으며, 특히다이아몬드입자가이탈되지않도록하여부착강도를높일수 있고, 이에따라전체다이아몬드와이어의성능향상에기여할수 있음은물론사용수명도보다길게할 수있는효과를갖는다.
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