Abstract:
PROBLEM TO BE SOLVED: To inexpensively provide a melted quartz glass which is suitably usable for various optical materials that use ultraviolet rays, visible rays and infrared rays, a member for manufacturing a semiconductor, a member for manufacturing a liquid crystal, a member for manufacturing MEMS, and a glass substrate for a liquid crystal, has a high transmittance to ultraviolet rays, visible rays and infrared rays, has high purity and high heat resistance, and a low diffusion speed of a Cu ion.SOLUTION: In a melted quartz glass, an internal transmittance to ultraviolet light having a wavelength of 245 nm in a thickness of 10 mm is 95% or more, an OH content is 5 ppm or less, and each content of Li, Na, K, Mg, Ca and Cu is less than 0.1 ppm. Preferably, Al is contained therein in weight ratio of 2 ppm or less, the viscosity at 1,215°C is 10Pa s or more, and a diffusion coefficient of a Cu ion in a depth of 20 to 100 μm from the surface in thermal diffusion of the Cu ion at 1,050°C in the atmosphere is 1×10cm/sec or less. Such a melted quartz glass can be obtained by previously converting raw material silica powder into cristobalite, and then melting the cristobalitized silica powder in a non-reducing atmosphere.
Abstract:
PROBLEM TO BE SOLVED: To inexpensively provide quartz glass usable for various kinds of optical material, a member for manufacturing a semiconductor and a member for manufacturing a liquid crystal and having high transmittance to ultraviolet light, visible light and infrared light, high purity and high heat resistance and the low diffusion rate of Cu ion. SOLUTION: The quartz glass has Cu concentration of ≤0.01 ppm at the depth of 5 mm from the exposed surface when exposed to Cu oxide vapor at 1,050°C for four hours under the atmosphere, contains ≤0.2 ppm in total of Li and Na and 11.5 Pa s coefficient of viscosity at 1,215°C and the coefficient of viscosity increased to ≥10 12.0 Pa s by containing ≤3 ppm Al by weight. The quartz glass is obtained by forming raw material silica powder into cristobalite and melting in a non-reducing atmosphere. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for efficiently producing doped silica glass in which a dopant element exists uniformly and which has excellent uniformity. SOLUTION: The doped silica glass is produced by vitrifying a silica glass precursor, obtained by incorporating the dopant element into silica, by heating it by the irradiation with electromagnetic waves. The doped silica glass contains no aggregated particle of the dopant element, having a particle diameter of ≥1 μm. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a quartz glass having a high purity and exhibiting enhanced durability while keeping good processability and machinability, and reduced dusting property as a member of a semiconductor production apparatus or a liquid crystal display production apparatus using a halide gas and/or its plasma; and to provide a device equipped with such excellent quartz glass. SOLUTION: The highly durable quartz glass is characterized by containing aluminum and at least one element (M) selected from the group consisting of group 2A elements, group 3A elements and group 4A elements of the periodic table. A method for manufacturing the quartz glass, and the quartz glass member and the device using the quartz glass are also provided. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a low cost synthetic quartz glass for vacuum ultraviolet light which has excellent properties and is manufactured using an existing general equipment without carrying out excessive and needless modification of a quartz glass synthesized by the soot method (VAD method) using a glass forming raw material such as SiCl 4 and a manufacturing method of the same and a mask substrate for vacuum ultraviolet light using the same. SOLUTION: The synthetic quartz glass for vacuum ultraviolet light contains 5-20 ppm OH group and ≤50 ppm halogen element and has ≤0.1 cm -1 absorption coefficient to the vacuum ultraviolet light having 163 nm wave length and ≤0.01 cm -1 variation of the absorption coefficient in 163 nm wave length when the vacuum ultraviolet light is emitted. The manufacturing method of the same and the mask substrate for vacuum ultraviolet light using the same are provided. COPYRIGHT: (C)2004,JPO