Abstract:
A heated laser package generally includes a laser diode, a heating resistor and a transistor in a single laser package. The heating resistor and transistor form a heating circuit and may be located on a submount adjacent to the laser diode. The transistor is configured to control the drive current to the heating resistor and any additional heat generated by the transistor may contribute to the heating of the laser diode and thus increase the thermal efficiency of the system. The heated laser package may be used in a temperature controlled multi-channel transmitter optical subassembly (TOSA), which may be used in a multi-channel optical transceiver. The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).
Abstract:
A temperature controlled multi-channel transmitter optical subassembly (TOSA) may be used in a multi-channel optical transceiver. The temperature controlled multi-channel TOSA generally includes an array of lasers optically coupled to an optical multiplexer, such as an arrayed waveguide grating (AWG), to combine multiple optical signals at different channel wavelengths. The lasers may be thermally tuned to the channel wavelengths by establishing a global temperature for the array of lasers and separately raising local temperatures of individual lasers in response to monitored wavelengths associated with the lasers. A temperature control device, such as a TEC cooler coupled to the laser array, may provide the global temperature and individual heaters, such as resistors adjacent respective lasers, may provide the local temperatures. The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).
Abstract:
A distortion compensation circuit including a configurable delay may be used with one or more non-linear elements, such as a laser, to compensate for distortion generated by the non-linear element(s), for example, in broadband RF applications. Embodiments of the distortion compensation circuit may include a primary signal path with a configurable delay segment and a secondary signal path including at least one distortion generator. The configurable delay segment may be selectively configured to provide different delay settings to accommodate different RF loading conditions such that the delayed RF signal on the primary signal path is aligned with the distortion products generated on the secondary signal path when combined to form an RF signal with distortion compensation.
Abstract:
An optical transmission system and method may control optical signal transmission in an optical network, such as a passive optical network (PON), to reduce degradation of one or more optical signals traveling over the same optical waveguide. In particular, optical signal transmission may be controlled to reduce carrier to noise ratio (CNR) degradation of an optical signal (e.g., a multichannel video signal) resulting from the effects of stimulated Raman scattering (SRS) and/or double Rayleigh backscattering (DRBS). The CNR degradation may be reduced by controlling transmission of one or more of a plurality of optical signals in the optical network based on various parameters affecting the contribution to CNR degradation by SRS and/or DRBS and affecting the performance of the optical transmission system. The optical signal transmission may be controlled by adjusting a preemphasis and/or transmitted power of the optical signal(s).
Abstract:
An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation.
Abstract:
A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3 % less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.
Abstract:
The present invention is directed to a method and VCSEL (200, 300) for improved heat removal/dispersion. The VCSEL comprises a bottom mirror, an active region disposed on the bottom mirror (203, 303), a heat spreading layer (207, 307) disposed on the active region (204, 304), and a top mirror (215, 315) disposed above the heat spreading layer. The heat spreading layer may be composed of InP.
Abstract:
An optical transceiver assembly includes a thermal dual arrayed waveguide grating (AWG) for both multiplexing and demultiplexing optical signals. The thermal dual AWG may be used as an optical multiplexer/demultiplexer with an array of laser emitters and an array of photodetectors to provide a transmitter optical subassembly (TOSA) and a receiver optical subassembly (ROSA) in the optical transceiver assembly. The thermal dual AWG may be formed as a single chip, and a temperature control device, such as thermoelectric cooler (TEC), may be used in the transceiver to stabilize the temperature of the AWG. In an embodiment, an external reflector may be used at a transmit output of the dual AWG to complete the lasing cavities after the AWG, thereby providing a laser array mux assembly. The optical transceiver device may also be part of a larger system, such as a wavelength division multiplexed (WDM) passive optical network (PON).
Abstract:
A multi-channel transmitter optical subassembly (TOSA) including staggered transistor outline (TO) can laser package placement to provide enhanced coupling and optical power is disclosed, and may be used in an optical transceiver for transmitting an optical signal. The TOSA comprises a housing that includes plurality of sidewall openings with each sidewall opening configured to couple to a TO can laser package to provide coarse wavelength division multiplexing. The housing includes at least first and second sidewall openings on a first sidewall, and a third sidewall opening disposed on a sidewall opposing the first sidewall and being positioned at generally a mid-point between the first and second sidewall openings. This staggered and opposing sidewall opening arrangement allows an increased distance between adjacent sidewall openings, and thus, the TOSA may increase optical power and yield by providing additional space for performing post-attachment alignment of TO can laser packages.
Abstract:
A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.