公开(公告)号：WO2006007142A2

公开(公告)日：2006-01-19

申请号：PCT/US2005/017703

申请日：2005-05-19

Applicant: FREESCALE SEMICONDUCTOR, INC. ,  MANCINI, David, P. ,  CHUNG, Young ,  DAUKSHER, William, J. ,  WESTON, Donald, F. ,  YOUNG, Steven, R. ,  BAIRD, Robert, W.

Inventor： MANCINI, David, P. ,  CHUNG, Young ,  DAUKSHER, William, J. ,  WESTON, Donald, F. ,  YOUNG, Steven, R. ,  BAIRD, Robert, W.

IPC: H01L21/301 ,  H01L21/46

CPC classification number: H01L21/3065 ,  H01L21/78 ,  Y10S438/977

Abstract: In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions (42, 43) are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.

Abstract translation: 根据具体实施例，公开了一种处理半导体衬底的方法，由此衬底被减薄，并且通过常规工艺将在衬底上形成的裸片分割。 沟槽区域（42,43）形成在衬底的背面上。 背面的各向同性蚀刻导致衬底变薄，同时保持沟槽的深度，从而促进晶粒的分割。

公开(公告)号：US2641890A

公开(公告)日：1953-06-16

申请号：US2597148

申请日：1948-05-08

Applicant: BAIRD ROBERT W

Inventor： BAIRD ROBERT W

IPC: A01D46/12

CPC classification number: A01D46/12