Abstract:
Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.
Abstract:
Lateral cathode field emission devices and methods of fabrication are set forth. Conventional integrated circuit fabrication techniques are advantageously used to produce the lateral FEDs. Cathode tips on the order of several hundred angstroms are consistently obtained as well as exact spacing of the cathode to gate and cathode to anode. Various cathode and device configurations are described, including a circular field emission device. A single integrated structure having multiple cathodes and multiple gates is possible to perform various logic operations and/or enhance current output from the device. Multiple field effect devices, with cathodes disposed parallel or perpendicular to the substrate, are integrally coupled through a sharing of one or more metallization layers definitive of the elements of the devices. Significant advantages in current density and circuit layout can be obtained. Methods for fabricating the various devices are also explained.
Abstract:
A system for sensing a presence and/or a concentration of a target substance in a fluid has a sensor and a processor coupled to the sensor. The sensor has a test probe having at least first and second test electrodes, wherein at least the first test electrode is functionalized to create a permittivity change in the area between the first and second test electrodes in the presence of the target substance. The sensor also has a reference probe having at least first and second reference electrodes. The processor is configured to determine at least one permittivity-based metric for the test probe; determine the at least one permittivity-based metric for the reference probe; and determine the presence and/or the concentration of the target substance based on the at least one permittivity-based metric for the test probe and the at least one permittivity-based metric for the reference probe. Related methods are disclosed.
Abstract:
A method and system for injecting charge includes providing a first material on a second material and injecting charge into the first material to trap charge at an interface between the first and second materials. The thickness of the first material is greater than a penetration depth of the injected charge in the first material.
Abstract:
A power system includes a housing with a chamber, a member with a stored static electrical charge, and a pair of electrodes. The member is connected to the housing and extends at least partially across the chamber. The electrodes are connected to the housing, are spaced from and on substantially opposing sides of the member from each other, and are at least partially in alignment with each other. The member is movable with respect to the pair of electrodes or one of the pair of electrodes is movable with respect to the member.
Abstract:
A pressure transducer system includes a housing with a chamber, a member with a stored electrical charge, and a pair of electrodes that are at least partially in alignment with each other. At least a portion of the chamber is at a reference pressure. The member is connected to the housing and extends across at least a portion of the chamber. Each of the pair of electrodes is connected to the housing and is spaced from and on substantially opposing sides of the member. The member is movable with respect to the pair of electrodes or one of the pair of electrodes is movable with respect to the member in response to a monitored pressure.
Abstract:
A varactor includes a first capacitor plate, a second capacitor plate, at least one fixed charge holder, and a control electrode. The second capacitor plate is spaced from and movable towards and away from the first capacitor plate. At least one fixed charge holder with an imbedded charge is on at least a portion of the second capacitor plate. The control electrode is spaced from the second capacitor plate. Applying a bias to the control electrode moves the second capacitor plate towards or away from the first capacitor plate depending on the polarity of the applied bias.
Abstract:
This invention relates to methods for isolating highly-purified mixtures of natural type I interferons from white blood cells. The invention also relates to highly-purified mixtures of natural type I interferons which resemble natural type I interferon in that it includes 9 subtypes, i.e., alpha-1, alpha-2, alpha-5, alpha-7, alpha-8, alpha-10, alpha-14, alpha-21 and omega, giving rise to possibly 20 molecular species, including alpha-1a, alpha-1new, alpha-2a, alpha-2b, alpha-2c, alpha-5, alpha-5LG, alpha-7, alpha-8a, alpha-8c, alpha-10a, alpha-14a, alpha14-b, alpha 14-c, alpha-14LG, alpha-21a, alpha-21b, alpha-21c, omega and omega LG.
Abstract:
A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
Abstract:
An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed which are stimulable by electrons of very low energy. The display cell structures may also have gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A preferred fabrication process integrates an etch stop with an in situ phosphor formation process. The etch stop precisely defines the depth of an opening in the display cell structure. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations thereof to make phosphors of various chromaticities, which may also include dopants, such as a lanthanide rare earth element, manganese, chromium, or stoichiometrically excess zinc, copper, tin, or indium. A blue-light-emitting phosphor embodiment is based on ZnO treated with refractory metals, e.g. Ta, to prepare cathodoluminescent phosphor compositions, e.g. Ta.sub.2 Zn.sub.3 O.sub.8. Selective arrangement of various color phosphors may be made by selective deposition of suitable dopants. The selective deposition may be done, e.g. by chemical vapor deposition with appropriate masking, or by selective ion implantation.