公开(公告)号：WO2014152903A3

公开(公告)日：2014-11-20

申请号：PCT/US2014028178

申请日：2014-03-14

Applicant: RF MICRO DEVICES INC

Inventor： CHIRON JEAN-FREDERIC ,  KHLAT NADIM

IPC: H03F1/02 ,  H03F3/189

CPC classification number: H03F1/02 ,  H03F1/0222 ,  H03F3/189 ,  H03F3/20

Abstract: A radio frequency (RF) system includes an RF power amplifier (PA), which uses an envelope tracking power supply voltage to provide an RF transmit signal, which has an RF envelope; and further includes an envelope tracking power supply, which provides the envelope tracking power supply voltage based on a setpoint. RF transceiver circuitry, which includes envelope control circuitry and an RF modulator is disclosed. The envelope control circuitry provides the setpoint, such that the envelope tracking power supply voltage is clipped to form clipped regions and substantially tracks the RF envelope between the clipped regions, wherein a dynamic range of the envelope tracking power supply voltage is limited. The RF modulator provides an RF input signal to the RF PA, which receives and amplifies the RF input signal to provide the RF transmit signal.

Abstract translation: 射频（RF）系统包括RF功率放大器（PA），其使用包络跟踪电源电压来提供具有RF包络的RF发射信号; 并且还包括包络跟踪电源，该包络跟踪电源基于设定值提供包络跟踪电源电压。 公开了包括包络控制电路和RF调制器的RF收发器电路。 包络控制电路提供设定点，使得包络跟踪电源电压被削波以形成削波区域并且基本上跟踪削波区域之间的RF包络，其中包络跟踪电源电压的动态范围被限制。 RF调制器向RF PA提供RF输入信号，RF PA接收并放大RF输入信号以提供RF发送信号。

公开(公告)号：WO2014152876A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/028089

申请日：2014-03-14

Applicant: RF MICRO DEVICES, INC

Inventor： CHIRON, Jean-Frederic

IPC: H03F1/02

CPC classification number: H03F1/26 ,  H03F1/0222 ,  H03F1/0266 ,  H03F3/189 ,  H03F3/20

Abstract: A radio frequency (RF) power amplifier (PA) and an envelope tracking power supply are disclosed. The RF PA receives and amplifies an RF input signal to provide an RF transmit signal using an envelope power supply voltage. The envelope tracking power supply provides the envelope power supply voltage based on a setpoint, which has been constrained so as to limit a noise conversion gain (NCG) of the RF PA to not exceed a target NCG.

Abstract translation: 公开了射频（RF）功率放大器（PA）和包络跟踪电源。 RF PA接收并放大RF输入信号，以使用包络电源电压提供RF发射信号。 信封跟踪电源基于设定点提供包络电源电压，该设定点已被约束，以便将RF PA的噪声转换增益（NCG）限制为不超过目标NCG。

公开(公告)号：WO2014145623A1

公开(公告)日：2014-09-18

申请号：PCT/US2014/030419

申请日：2014-03-17

Applicant: RF MICRO DEVICES, INC.

Inventor： MAXIM, George ,  SCOTT, Baker ,  TSAI, Ming ,  SHIRVANI, Alireza

IPC: H03F3/195 ,  H03F3/189 ,  H03F1/14 ,  H01L23/66 ,  H03F1/56 ,  H03F1/34

CPC classification number: H03F3/193 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/16 ,  H01L2223/6644 ,  H01L2224/16225 ,  H03F1/14 ,  H03F1/347 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/451

Abstract: This disclosure relates generally to radio frequency (RF) amplification devices and methods of operating the same. In one embodiment, an RF amplification device includes an RF amplification circuit and a stabilizing transformer network. The RF amplification circuit defines an RF signal path and is configured to amplify an RF signal propagating in the RF signal path. The stabilizing transformer network is operably associated with the RF signal path defined by the RF amplification circuit. Furthermore, the stabilizing transformer network is configured to reduce parasitic coupling along the RF signal path of the RF amplification circuit as the RF signal propagates in the RF signal path. In this manner, the stabilizing transformer network allows for inexpensive components to be used to reduce parasitic coupling while allowing for smaller distances along the RF signal path.

Abstract translation: 本公开一般涉及射频（RF）放大装置及其操作方法。 在一个实施例中，RF放大装置包括RF放大电路和稳定变压器网络。 RF放大电路定义RF信号路径并且被配置为放大在RF信号路径中传播的RF信号。 稳定变压器网络与由RF放大电路限定的RF信号路径可操作地相关联。 此外，稳定变压器网络被配置为当RF信号在RF信号路径中传播时减小沿着RF放大电路的RF信号路径的寄生耦合。 以这种方式，稳定变压器网络允许使用便宜的部件来减少寄生耦合，同时允许沿着RF信号路径的较小的距离。

公开(公告)号：WO2013063387A3

公开(公告)日：2014-05-30

申请号：PCT/US2012062110

申请日：2012-10-26

Applicant: RF MICRO DEVICES INC

Inventor： KHLAT NADIM ,  KAY MICHAEL R ,  GORISSE PHILIPPE

IPC: H02M1/15 ,  H02M3/156 ,  H03F1/02

CPC classification number: H02M3/156 ,  H02M1/15 ,  H02M2001/0045 ,  H02M2001/0048 ,  H03F1/0216 ,  H03F3/2171 ,  Y02B70/1491

Abstract: A direct current (DC)-DC converter, which includes a parallel amplifier and a switching supply, is disclosed. The switching supply includes switching circuitry, a first inductive element, and a second inductive element. The parallel amplifier has a feedback input and a parallel amplifier output. The switching circuitry has a switching circuitry output. The first inductive element is coupled between the switching circuitry output and the feedback input. The second inductive element is coupled between the feedback input and the parallel amplifier output.

Abstract translation: 公开了一种包括并联放大器和开关电源的直流（DC）-DC转换器。 开关电源包括开关电路，第一电感元件和第二电感元件。 并联放大器具有反馈输入和并行放大器输出。 开关电路具有开关电路输出。 第一电感元件耦合在开关电路输出和反馈输入之间。 第二电感元件耦合在反馈输入端和并行放大器输出端之间。

公开(公告)号：WO2011119460A1

公开(公告)日：2011-09-29

申请号：PCT/US2011/029136

申请日：2011-03-21

Applicant: RF MICRO DEVICES, INC.

Inventor： KHLAT, Nadim

IPC: H04B1/40

CPC classification number: H04B1/406

Abstract: A user equipment (UE) front end (FE) that is adapted for multiband simultaneous transmission and reception is provided. The UE FE includes a first multi-filter device having a transmit (TX) band-pass filter adapted to pass a first TX signal band associated with a first radio access technology type, and a receive (RX) band-pass filter adapted to pass a second RX signal band associated with a second radio access technology type. The UE FE also includes a second multi-filter device having a TX band-pass filter adapted to pass a second TX signal band associated with the second radio access technology type and an RX band-pass filter adapted to pass the first RX signal band associated with the first radio access technology type. The first radio access technology type and the second radio access technology type are preferably long term evolution (LTE) and code division multiple access 2000 (CDMA2000), respectively, or viceversa.

Abstract translation: 提供了适用于多频带同时发送和接收的用户设备（UE）前端（FE）。 UE FE包括具有适于通过与第一无线电接入技术类型相关联的第一TX信号频带的发射（TX）带通滤波器的第一多滤波器装置和适于传递的接收（RX）带通滤波器 与第二无线电接入技术类型相关联的第二RX信号频带。 UE FE还包括具有适于通过与第二无线电接入技术类型相关联的第二TX信号频带的TX带通滤波器的第二多滤波器设备和适于通过相关联的第一RX信号带的RX带通滤波器 具有第一种无线电接入技术类型。 第一无线电接入技术类型和第二无线电接入技术类型优选地分别是长期演进（LTE）和码分多址2000（CDMA2000），或者反之亦然。

公开(公告)号：WO2009003018A3

公开(公告)日：2009-01-29

申请号：PCT/US2008068153

申请日：2008-06-25

Applicant: RF MICRO DEVICES INC

Inventor： LEAHY DONALD JOSEPH ,  WARREN WAITE R JR ,  PARKER STEPHEN

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L24/97 ,  H01L25/0655 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1815 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/181 ,  H05K3/284 ,  H05K2203/0723 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49153 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49789

Abstract: In one embodiment, a meta-module having circuitry for two or more modules is formed on a substrate, which is preferably a laminated substrate. The circuitry for the different modules is initially formed on the single meta- module. Each module will have one or more component areas in which the circuitry is formed. A metallic structure is formed on or in the substrate for each component area to be shielded. A single body, such as an overmold body, is then formed over all of the modules on the meta-module. At least a portion of the metallic structure for each component area to be shielded is then exposed through the body by a cutting, drilling, or like operation. Next, an electromagnetic shield material is applied to the exterior surface of the body of each of the component areas to be shielded and in contact with the exposed portion of the metallic structures.

Abstract translation: 在一个实施例中，具有用于两个或更多个模块的电路的元模块形成在衬底上，衬底优选为层压衬底。 最初在单个元模块上形成不同模块的电路。 每个模块将具有其中形成电路的一个或多个组件区域。 对于要屏蔽的每个部件区域，在基板上或基板上形成金属结构。 然后在元模块上的所有模块上形成单体，例如包覆模体。 然后，通过切割，钻孔或类似操作将待屏蔽的每个部件区域的金属结构的至少一部分暴露通过主体。 接下来，将电磁屏蔽材料施加到要被屏蔽并与金属结构的暴露部分接触的每个部件区域的主体的外表面上。

公开(公告)号：WO2008089002A1

公开(公告)日：2008-07-24

申请号：PCT/US2008/050627

申请日：2008-01-09

Applicant: RF MICRO DEVICES, INC.

Inventor： BHATTACHARJEE, Kushal ,  ZHGOON, Sergei

IPC: H03H9/145 ,  H03H9/25

CPC classification number: H03H9/02614 ,  H03H9/02574 ,  Y10T29/42 ,  Y10T29/49155

Abstract: The present invention provides a composite structure having a supporting substrate between a piezoelectric substrate and a compensation layer. The materials used to form the piezoelectric substrate and the compensation layer in isolation, have higher thermal coefficients of expansion (TCE) relative to the TCE of the materials forming the supporting substrate. Once the composite structure is created, the piezoelectric substrate and compensation layer tend to expand and contract in a similar manner as temperature changes. The expansion and contraction forces applied to the supporting substrate by the piezoelectric substrate due to temperature changes are substantially countered by similar opposing forces applied by the compensation layer, resulting in the opposing forces substantially counteracting one another. Due to the counteraction, the composite structure resists bending or warping, reducing expansion and contraction and increasing stress of the piezoelectric substrate, and thus reducing the effective TCE and TCF of the piezoelectric substrate.

Abstract translation: 本发明提供了一种在压电基片和补偿层之间具有支撑基底的复合结构。 用于形成压电衬底和补偿层的隔离材料相对于形成支撑衬底的材料的TCE具有较高的热膨胀系数（TCE）。 一旦形成复合结构，压电基片和补偿层就会像温度变化一样膨胀和收缩。 由于温度变化而由压电基板施加到支撑基板的膨胀和收缩力通过由补偿层施加的相似的相反力基本抵消，导致相反的力基本相互抵消。 由于反作用，复合结构抵抗弯曲或翘曲，减小压电基板的膨胀和收缩并增加应力，从而降低压电基板的有效TCE和TCF。

公开(公告)号：WO2003073501A2

公开(公告)日：2003-09-04

申请号：PCT/US2003/003031

申请日：2003-02-03

Applicant: RF MICRO DEVICES, INC.

Inventor： GIBSON, Joel, Robert ,  KNADLER, Marnie, Ann

IPC: H01L23/495

CPC classification number: H01L24/49 ,  H01L23/49541 ,  H01L23/645 ,  H01L24/48 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45014 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: The present invention integrates an inductor into a semiconductor package by integrally forming inductive segments in the leadframe. The inductive segments may be connected directly to a lead of the leadframe, or indirectly to a lead or a bond pad on a semiconductor die via wirebonds to form an inductor. The inductance value for the resultant inductor is typically controlled by the point of contact for the wirebonds or the leads about the inductive segment. The inductance values may also be controlled by the shape and size of the inductive segments. The leadframe may be formed to support multiple inductive segments, and one or more configurations, including those using one or more die flags to support a like number of semiconductor die.

Abstract translation: 本发明通过在引线框中整合形成感应段来将电感器集成到半导体封装中。 感应段可以直接连接到引线框架的引线，或者通过引线键合到间接地连接到半导体管芯上的引线或焊盘，以形成电感器。 所得到的电感器的电感值通常由引线键或电感段周围的引线的接触点来控制。 电感值也可以由感应段的形状和尺寸来控制。 引线框可以形成为支撑多个感应段，以及一个或多个配置，包括使用一个或多个管芯标记支撑相同数量的半导体管芯的构造。

公开(公告)号：WO2002095815A2

公开(公告)日：2002-11-28

申请号：PCT/US2002/015345

申请日：2002-05-15

Applicant: RF MICRO DEVICES, INC.

Inventor： HOLYOAK, Howard, Joseph ,  BAILEY, John, Cody

IPC: H01L21/58

CPC classification number: H01L24/75 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/73253 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/00

Abstract: The present invention controls attachment of a first semiconductor material, such as a semiconductor die, to a second semiconductor material, such as a bond pad, substrate, or the like. A placement tool is used to pick up the first semiconductor material and move it to a defined position above the top surface of the second semiconductor material. The second semiconductor material will have an adhesive, such as epoxy, applied to its top surface. From the defined position above the second semiconductor material, the placement tool is allowed to fall for an amount of time previously determined to result in an adhesive layer of a defined thickness, within precise tolerances. The adhesive thickness is often referred to as bond line thickness (BLT) when bonding a semiconductor die to a bond pad, substrate, or the like.

Abstract translation: 本发明控制诸如半导体管芯的第一半导体材料对诸如接合焊盘，衬底等的第二半导体材料的附着。 放置工具用于拾取第一半导体材料并将其移动到第二半导体材料的顶表面上方的限定位置。 第二半导体材料将具有施加到其顶表面上的粘合剂，例如环氧树脂。 从第二半导体材料上方的限定位置，允许放置工具在精确的公差范围内下降预先确定的时间以产生具有规定厚度的粘合剂层。 当将半导体管芯接合到接合焊盘，衬底等时，粘合剂厚度通常被称为接合线厚度（BLT）。

公开(公告)号：WO2016100626A1

公开(公告)日：2016-06-23

申请号：PCT/US2015/066300

申请日：2015-12-17

Applicant: RF MICRO DEVICES, INC.

Inventor： BHATTACHARJEE, Kushal

IPC: H03H9/02 ,  H03H3/02

CPC classification number: H03H9/02244 ,  H01L41/047 ,  H01L41/312 ,  H01L41/33 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02275 ,  H03H9/02574 ,  H03H9/25 ,  H03H2003/027

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.

Abstract translation: 微电机械系统（MEMS）导波器件包括压电层，其包括多个不同厚度的薄化区域，每个部分具有不同的凹槽，不同的电极组在不同的稀薄区域上或邻近于不同的薄化区域并且被布置用于横向声学 在不同的薄化区域中的不同波长的波以及压电层和基底之间的至少一个键合界面。 可选地，可以在压电层和基板之间中间粘结缓冲层。 制造这种装置的方法包括局部减薄压电层以限定多个凹陷，将压电层粘合在基底层上或上方，以使凹陷部分地由衬底或任选的缓冲层界定，并且限定多组 在不同稀疏区域上或上方的电极。