公开(公告)号：KR100351047B1

公开(公告)日：2002-09-10

申请号：KR1019990012031

申请日：1999-04-07

Applicant: 삼성전자주식회사

Inventor： 강창석 ,  박홍배

IPC: H01L27/108

Abstract: 본발명은커패시터의상하부전극등 백금족금속을포함하는층에미량의산소를첨가하는방법을제공한다. 본발명은, 커패시터의상하부전극등 백금족금속을포함하는층을형성한후, 이에대해산소이온주입공정을수행한다. 본발명에따르면, 백금족금속을포함하는층에산소이온주입공정을수행함으로써, 이백금족금속을포함하는층에미량의산소를그 농도를정확히조절하면서첨가할수 있다. 또한, 종래전기도금방법에의해백금족금속층을형성하는경우불가능했던산소첨가가가능해진다.

公开(公告)号：KR1020020044000A

公开(公告)日：2002-06-14

申请号：KR1020000073484

申请日：2000-12-05

Applicant: 삼성전자주식회사

Inventor： 박홍배

IPC: H01L27/105

Abstract: PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to effectively improve a leakage current of the capacitor, by effectively improving a surface morphology of a ferroelectric layer and by using the ferroelectric layer of which the surface is plasma-processed. CONSTITUTION: A lower electrode(600) is formed on a semiconductor substrate(100). The surface of the ferroelectric layer(700) is plasma-processed. An upper electrode is formed on the plasma-processed ferroelectric layer. The plasma used in the plasma process is excited from a source in which argon gas is added to oxygen gas or fluorine gas.

Abstract translation: 目的：提供一种用于制造半导体器件的电容器的方法，通过有效地改善铁电层的表面形态和通过使用表面经等离子体处理的铁电层来有效地改善电容器的漏电流。 构成：在半导体衬底（100）上形成下电极（600）。 铁电层（700）的表面被等离子体处理。 在等离子体处理的铁电层上形成上电极。 在等离子体工艺中使用的等离子体从其中将氩气加入氧气或氟气的源中激发。

公开(公告)号：KR100319882B1

公开(公告)日：2002-01-10

申请号：KR1019990007503

申请日：1999-03-08

Applicant: 삼성전자주식회사

Inventor： 강창석 ,  박홍배

IPC: C23C16/30

Abstract: 본발명은챔버에소스가스들을공급시키기위한장치를갖는화학기상증착장비에관한것으로, 바리움(Ba)을함유하는소스물질, 스트론티움(Sr)을함유하는소스물질, 및타이타늄(Ti)을함유하는소스물질을기체상태로변화시키어밀폐된챔버내부로주입시키는소스가스공급장치를갖는화학기상증착장비에있어서, 소스가스공급장치는챔버에병렬접속된복수의기화기를구비하여, 바리움(Ba)을함유하는소스물질및 스트론티움(Sr)을함유하는소스물질은복수의기화기중하나의기화기를통하여기화되고타이차늄(Ti)을함유하는소스물질은다른기화기를통하여기화되는것을특징으로한다.

公开(公告)号：KR1020010086998A

公开(公告)日：2001-09-15

申请号：KR1020000011050

申请日：2000-03-06

Applicant: 삼성전자주식회사

Inventor： 황두섭 ,  박홍배 ,  유차영

IPC: H01L21/31

Abstract: PURPOSE: A vaporization system and a method for supplying a source gas using the same are provided to increase a vaporization ratio of a vaporization portion by accelerating a carrier gas. CONSTITUTION: A lower main heater(42) is covered by the first protective layer(44). A lower face of an upper main heater(40) is covered by the second protective layer(46). A barrier(48) is formed on a predetermined position of the second protective layer(46). A bottleneck portion(56) is formed between the upper and the lower main heaters(40,42). A speed of gas is accelerated by passing through the bottleneck portion(56). A vaporization portion(50) is formed at the lower main heater(42).

Abstract translation: 目的：提供蒸发系统和使用其的源气体的供给方法，以通过加速载气来提高蒸发部的蒸发率。 构成：下部主加热器（42）被第一保护层（44）覆盖。 上主加热器（40）的下表面被第二保护层（46）覆盖。 在第二保护层（46）的预定位置上形成有阻挡层（48）。 在上下主加热器（40,42）之间形成瓶颈部（56）。 通过瓶颈部分（56）加速气体的速度。 蒸发部分（50）形成在下主加热器（42）处。

公开(公告)号：KR1020010080816A

公开(公告)日：2001-08-25

申请号：KR1020000001996

申请日：2000-01-17

Applicant: 삼성전자주식회사

Inventor： 강창석 ,  황두섭 ,  유차영 ,  박홍배

IPC: H01L21/205

Abstract: PURPOSE: An apparatus for manufacturing semiconductor device is provided to prevent transmission of heat within the gas jet device by including a cooling section within a jet plate at the bottom of a sealing section and a heat insulated section within the cooling section. CONSTITUTION: The apparatus includes a reaction chamber(43) onto which a semiconductor wafer is loaded. A gas injection device has a plurality of through holes(47) for uniformly spraying a source gas on the reaction chamber. A gas injection section has a given space through which the source gas is injected into the gas injection device. The gas injection device includes upper and lower spray plates(49,51), that are located on the reaction chamber, one or more sealing sections(61,65) that face the spray plate and the chamber or the gas injection section and the spray plate at both sides of the spray plate, and a cooling section(63) located within the spray plate. A first gas injection line(55) is installed between the upper spray plate(51) and the lower spray plate(49).

Abstract translation: 目的：提供一种用于制造半导体器件的装置，以通过在密封部分的底部的喷射板和冷却部分内的隔热部分包括冷却部分来防止气体喷射装置内的热传递。 构成：该装置包括反应室（43），半导体晶片装载到该反应室。 气体注入装置具有用于在反应室上均匀喷射源气体的多个通孔（47）。 气体注入部分具有一定的空间，源气体通过该给定空间注入到气体注入装置中。 气体注入装置包括位于反应室上的上喷雾板和下喷射板（49,51），一个或多个密封部分（61,65）面对喷射板和腔室或气体喷射部分和喷雾 在喷雾板的两侧设有板，以及位于喷射板内的冷却部（63）。 第一气体注入管线（55）安装在上部喷射板（51）和下部喷射板（49）之间。

公开(公告)号：KR1020000074727A

公开(公告)日：2000-12-15

申请号：KR1019990018860

申请日：1999-05-25

Applicant: 삼성전자주식회사

Inventor： 박홍배 ,  강창석 ,  유차영 ,  황두섭

IPC: H01L27/10

Abstract: PURPOSE: A method for manufacturing a ferroelectric capacitor using an ozone annealing process is provided to improve an electrical characteristic of a ferroelectric layer, by performing an ozone annealing process before or after the ferroelectric layer is formed. CONSTITUTION: A storage electrode(12) is formed on a semiconductor substrate(10). A ferroelectric layer(14) is formed on the storage electrode. The ferroelectric layer is annealed at an ozone atmosphere. A plate electrode of a ferroelectric capacitor is formed on the ferroelectric layer. The ferroelectric is an oxide of a Perovskite structure or stacked structure of bismuth layers.

Abstract translation: 目的：提供一种使用臭氧退火工艺制造铁电电容器的方法，通过在形成铁电层之前或之后进行臭氧退火处理来提高铁电层的电特性。 构成：存储电极（12）形成在半导体衬底（10）上。 在存储电极上形成铁电体层（14）。 铁电层在臭氧气氛下退火。 在铁电层上形成铁电电容器的平板电极。 铁电体是钙钛矿结构的氧化物或铋层的叠层结构。

公开(公告)号：KR100275726B1

公开(公告)日：2000-12-15

申请号：KR1019970082093

申请日：1997-12-31

Applicant: 삼성전자주식회사

Inventor： 김병희 ,  박홍배

IPC: H01L27/10

CPC classification number: H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L27/11507 ,  H01L28/56

Abstract: PURPOSE: A ferroelectric memory device and a method for manufacturing the same are provided to prevent an imprint phenomenon generated in a ferroelectric capacitor by forming seed layers having the same surface characteristic on an upper portion and a lower portion of a ferroelectric layer, respectively. CONSTITUTION: A lower electrode(112) is formed on a semiconductor substrate(100). A lower seed layer(114) is formed on the lower electrode(112). A ferroelectric layer(116) is formed on the lower seed layer(114). An upper seed layer(118) is formed on the ferroelectric layer(116). The upper seed layer(118) is formed with the same material as the lower seed layer(114). An upper electrode(120) is formed on the upper seed layer(118).

Abstract translation: 目的：提供铁电存储器件及其制造方法，以分别在铁电层的上部和下部形成具有相同表面特性的种子层，以防止铁电电容器中产生的印痕现象。 构成：在半导体衬底（100）上形成下电极（112）。 在下电极（112）上形成下种子层（114）。 在下种子层（114）上形成铁电层（116）。 在强电介质层（116）上形成上部种子层（118）。 上种子层（118）由与下籽晶层（114）相同的材料形成。 在上种子层（118）上形成上电极（120）。

公开(公告)号：KR1020000065605A

公开(公告)日：2000-11-15

申请号：KR1019990012031

申请日：1999-04-07

Applicant: 삼성전자주식회사

Inventor： 강창석 ,  박홍배

IPC: H01L27/108

Abstract: PURPOSE: A method for forming a capacitor using oxygen ion injection, a semiconductor device with a metal layer of a platinum group including oxygen ions, and a method for manufacturing the same are provided to prevent the leakage current of a capacitor by injecting oxygen ions on a layer including a platinum group metal. CONSTITUTION: A method for forming a capacitor using oxygen ion injection comprises the step of injecting oxygen ions to an upper electrode or a lower electrode(12) between a process for forming a lower electrode and a process for forming a dielectric layer. In the oxygen ion injection process, the ion injection energy is 1 to 500keV and its density is 1.0 times 10¬15 to 1.0 times 10¬18 ion/cm¬2. The method further comprises the step of performing a heat process for results injected with the oxygen ions after performing the oxygen ion injection process.

Abstract translation: 目的：提供一种使用氧离子注入形成电容器的方法，具有包含氧离子的铂族金属层的半导体器件及其制造方法，以通过将氧离子注入到电容器的漏电流 包含铂族金属的层。 构成：使用氧离子注入形成电容器的方法包括在用于形成下电极的工艺和形成电介质层的工艺之间将氧离子注入上电极或下电极（12）的步骤。 在氧离子注入过程中，离子注入能量为1〜500keV，密度为10〜15〜1.0倍10〜18离子/ cm 2的1.0倍。 该方法还包括在执行氧离子注入处理之后对用氧离子注入的结果进行热处理的步骤。

公开(公告)号：KR1020000059696A

公开(公告)日：2000-10-05

申请号：KR1019990007503

申请日：1999-03-08

Applicant: 삼성전자주식회사

Inventor： 강창석 ,  박홍배

IPC: C23C16/30

CPC classification number: C23C16/4485 ,  C23C16/409 ,  Y10S261/65

Abstract: PURPOSE: A CVD(chemical vapor deposition) equipment with an apparatus for supplying source gas to a chamber is provided to prevent an evaporator from clogging or pollution without an additional cleaning process during CVD with at least two source materials. CONSTITUTION: A first evaporator(107a) vaporizes source materials containing Pb and Ti having similar thermal characteristics each other. A second evaporator(107b) vaporizes other source materials containing Zr having different thermal characteristics from the source materials containing Pb and Ti. The first evaporator(107a) keeps a temperature within 200-230°C while the second evaporator(107b) is kept within a range of 245-300°C.

Abstract translation: 目的：提供一种具有用于向腔室供应源气体的设备的CVD（化学气相沉积）设备，以防止蒸发器在具有至少两种源材料的CVD期间没有额外的清洁过程而堵塞或污染。 构成：第一蒸发器（107a）蒸发含有彼此具有相似热特性的Pb和Ti的源材料。 第二蒸发器（107b）从含有Pb和Ti的源材料蒸发含有不同热特性的Zr的其它源材料。 第一蒸发器（107a）在第二蒸发器（107b）保持在245-300℃的范围内时将温度保持在200-230℃内。

公开(公告)号：KR1019990024821A

公开(公告)日：1999-04-06

申请号：KR1019970046187

申请日：1997-09-08

Applicant: 삼성전자주식회사

Inventor： 박홍배 ,  유차영

IPC: H01L27/02

Abstract: 본 발명은 반도체장치의 커패시터 제조방법에 관해 개시한다. 본 발명은 하부전극을 형성한 다음, 유전막 특히, 강유전물질막을 형성하기 전에 상기 하부 전극을 소정의 온도에서 소정시간 동안 프리 베이크(prebake)한다. 이렇게 함으로써, 상기 하부 전극으로부터 수분이나 오염물질 등을 제거하여 상기 하부전극과 그 위에 형성되는 강유전물질막 예컨데, PZT막 사이에 부착력을 높여서 PZT막이 리프팅되는 것을 방지할 수 있음은 물론, 균일한 두께와 균일한 잔류분극 분포를 갖는 PZT막을 형성할 수 있다. 뿐만 아니라, 기판의 가장자리에 나타나는 PZT막의 코팅불량도 해소할 수 있다.