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公开(公告)号：KR1020080073511A
公开(公告)日：2008-08-11
申请号：KR1020070012215
申请日：2007-02-06
Applicant: 삼성전자주식회사 , 인하대학교 산학협력단
CPC classification number: G06T15/005 , H04N19/42 , H04N19/423 , H04N19/436 , H04N19/63
Abstract: A high-speed image processing method based on a graphics accelerator and an apparatus thereof are provided to assign an input texture and an output texture equally in at least one FBO to use an output result as input data without an additional process, thereby shortening a process time and reducing the usage of a memory. A pixel shader(30) of a GPU(Graphic Processing Unit) receives and processes texture data(302) of 32-bit floating-point data, and has at least one FBO(Frame Buffer Object)(333). An input image, an image processing target, is loaded to a video memory as the texture data. The pixel shader performs a specific algorithm for image processing for the input image, and outputs a result to at least one FBO as the texture data. An application performs rectangular rendering matching the entire screen and performs the binding of the contents of the FBOs to a texture. Finally, the image processing result performed by the pixel shader is rendered to a viewport. Floating-point data generated in image processing is represented by assigning the type of input and output textures to the type of a 32-bit real number.
Abstract translation: 提供了一种基于图形加速器及其装置的高速图像处理方法，用于在至少一个FBO中均匀地分配输入纹理和输出纹理，以使用输出结果作为输入数据，而不需要额外的处理，从而缩短处理 时间和减少内存的使用。 GPU（图形处理单元）的像素着色器（30）接收并处理32位浮点数据的纹理数据（302），并且具有至少一个FBO（帧缓冲器对象）（333）。 输入图像，图像处理目标，作为纹理数据被加载到视频存储器。 像素着色器对输入图像执行图像处理的特定算法，并将结果输出到至少一个FBO作为纹理数据。 应用程序执行与整个屏幕匹配的矩形渲染，并执行FBO内容与纹理的绑定。 最后，由像素着色器执行的图像处理结果被呈现给视口。 通过将输入和输出纹理的类型分配给32位实数的类型来表示图像处理中生成的浮点数据。
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公开(公告)号：KR1020070033114A
公开(公告)日：2007-03-26
申请号：KR1020050087363
申请日：2005-09-20
Applicant: 삼성전자주식회사
Inventor： 이민우
IPC: H01L21/02
Abstract: Semiconductor manufacturing equipment and a controlling method thereof are provided to prevent the contamination of a chamber and to reduce the loss of wafers by using a controller. Semiconductor manufacturing equipment includes a chamber(10), a vacuum line connected with the chamber, a dry pump(20), a roughing valve between the chamber and the dry pump, a predetermined valve between the roughing valve and the dry pump, a turbo pump on the vacuum line, a high vacuum valve, and a controller. The high vacuum valve is installed on the vacuum line. The high vacuum valve is located between the turbo pump and the chamber. The controller(80) is used for detecting an abnormal state of the dry pump.
Abstract translation: 提供半导体制造设备及其控制方法以防止腔室的污染并且通过使用控制器来减少晶片的损失。 半导体制造设备包括腔室（10），与腔室连接的真空管线，干泵（20），腔室和干泵之间的粗加工阀，粗加工阀和干泵之间的预定阀，涡轮 真空管上的泵，高真空阀和控制器。 高真空阀安装在真空管路上。 高真空阀位于涡轮泵和腔室之间。 控制器（80）用于检测干泵的异常状态。
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公开(公告)号：KR1020060027549A
公开(公告)日：2006-03-28
申请号：KR1020040076391
申请日：2004-09-23
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45563 , C23C16/402 , C23C16/45508 , C23C16/507
Abstract: 양질의 박막을 균일하게 형성할 수 있는 박막 형성 방법 및 이를 수행하기 위한 장치에 있어서, 프로세스 챔버 내측면을 따라서 제1 및 제2 가스 공급 라인들이 교호적으로 그리고 등간격으로 배치된다. 제1 및 제2 가스 공급 라인들은 동일한 규격을 가지며, 전단면에 분사구가 형성된다. 제1 및 제2 가스 공급 라인들은 반도체 기판보다 큰 직경의 원주선 상을 따라 배치된다. 제1 가스 공급 라인은 제1 소스 가스, 반응 가스 및 보조 가스를 공급하고, 제2 가스 공급 라인은 제2 소스 가스를 공급한다. 이 경우, 보조 가스는 제1 소스 가스를 반도체 기판의 중심부로 유도하여 프로세스 챔버 내부의 가스 분포도를 향상시킨다. 이로써, 파티클이 반도체 기판으로 낙하되는 것을 방지할 수 있고, 정비 공정의 효율을 증대시킬 수 있으며, 재 세팅 시 소요 시간을 크게 단축할 수 있고, 반도체 기판 상에 양질의 박막을 균일하게 형성할 수 있다.
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公开(公告)号：KR100443122B1
公开(公告)日：2004-08-04
申请号：KR1020010064808
申请日：2001-10-19
Applicant: 삼성전자주식회사
IPC: H01L21/02
CPC classification number: H01L21/6835 , H01L21/67103 , H01L2924/3025
Abstract: A susceptor (400) and a support (300) respectively support a wafer (500) and heating elements that are isolated thermally from one another. The support includes a heat- shielding portion (330) which restricts heat conduction between the heating elements.
Abstract translation: 基座（400）和支撑件（300）分别支撑晶片（500）和彼此热隔离的加热元件。 支撑件包括限制加热元件之间的热传导的隔热部分（330）。
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公开(公告)号：KR1020020094512A
公开(公告)日：2002-12-18
申请号：KR1020010032777
申请日：2001-06-12
Applicant: 삼성전자주식회사
IPC: H01L21/30
Abstract: PURPOSE: A heating apparatus for manufacturing semiconductor devices is provided to prevent a fuse fail and an arcing due to overload by independently connecting power lines to an inner heater and an outer heater. CONSTITUTION: The heating apparatus comprises a susceptor for loading a semiconductor wafer, a heating unit formed at lower of the susceptor, and a pair of power lines(201,202). The heating unit further includes an inner heater(131) and an outer heater(132). At this time, the power lines(201,202) for supplying power source are independently connected to the inner heater(131) and the outer heater(132) via connection members(133), respectively. Also, the outer heater(132) has a relatively big diameter compared to the inner heater(131).
Abstract translation: 目的：提供一种用于制造半导体器件的加热装置，用于通过独立地将电源线连接到内部加热器和外部加热器来防止保险丝故障和由于过载引起的电弧。 构成：加热装置包括用于加载半导体晶片的基座，形成在基座的下部的加热单元和一对电力线（201,202）。 加热单元还包括内部加热器（131）和外部加热器（132）。 此时，用于供电的电力线（201,202）分别经由连接构件（133）独立地连接到内加热器（131）和外加热器（132）。 此外，与内部加热器（131）相比，外部加热器（132）具有相对较大的直径。
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Patent Agency Ranking
公开(公告)号：KR1020020061803A
公开(公告)日：2002-07-25
申请号：KR1020010002814
申请日：2001-01-18
Applicant: 삼성전자주식회사
IPC: H01L21/02
CPC classification number: C23C16/4408 , C23C16/42 , C23C16/45561 , F17D1/04
Abstract: PURPOSE: An apparatus for eliminating residual gas of a gas supplying apparatus is provided to prevent WF6 gas remaining in a gas line from being injected to the inside of a chamber together with carrier gas like argon, by supplying the WF6 gas to the chamber in a main deposition step and by eliminating the WF6 gas remaining in the gas line connected to a low stress valve. CONSTITUTION: The low stress valve(100) supplies or intercepts the gas supplied from a plurality of mass flow controllers(MFC's)(60) through the gas line(81). A WF6 gas eliminating unit eliminates the remaining WF6 gas in the gas line connected to a gas introducing line of the low stress valve.
Abstract translation: 目的：提供一种用于消除气体供应装置的残留气体的装置，用于防止气体管线中留下的WF6气体与诸如氩气的载气一起注入到室内，通过将WF 6气体以 主沉积步骤，并且通过消除残留在连接到低应力阀的气体管线中的WF6气体。 构成：低应力阀（100）通过气体管线（81）供给或截取从多个质量流量控制器（MFC）（60）供给的气体。 WF6气体消除单元消除了连接到低应力阀的气体导入管线的气体管线中的剩余WF6气体。
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公开(公告)号：KR1020020037130A
公开(公告)日：2002-05-18
申请号：KR1020000067136
申请日：2000-11-13
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: PURPOSE: An apparatus for depositing a silicide layer and a method for preventing generation of particles are provided to prevent the generation of particles by connecting a silane gas supply tube to a process chamber. CONSTITUTION: A process chamber(210) is used for depositing a tungsten silicide layer on a wafer by reacting supplied reaction gases. A gas supply system(220) is connected with the process chamber(210). The gas supply system(220) is used for supplying a reaction gas and an inert gas into an inside of the process chamber(210). A pump(290) is connected with the process chamber(210) by a vacuum tube(295). The pump(290) is used for controlling an internal pressure of the process chamber(210) in order to optimize an internal state of the process chamber(210). The gas supply system(220) is formed with three inert gas supply tubes(230,234,238), a silane gas supply tube(240), a DCS gas supply tube(250), a WF6 gas supply tube(255), and an NF3 gas supply tube(260). A multitude of opening/shutting valve(232,236,239,242,252,256,262), a filter(222), a gas flow controller(224) are installed at each gas supply tube(230,234,238,240,250,255,260).
Abstract translation: 目的：提供一种用于沉积硅化物层的装置和用于防止产生颗粒的方法，以通过将硅烷气体供应管连接到处理室来防止产生颗粒。 构成：处理室（210）用于通过反应所提供的反应气体在晶片上沉积硅化钨层。 气体供给系统（220）与处理室（210）连接。 气体供给系统（220）用于将反应气体和惰性气体供应到处理室（210）的内部。 泵（290）通过真空管（295）与处理室（210）连接。 泵（290）用于控制处理室（210）的内部压力，以便优化处理室（210）的内部状态。 气体供给系统（220）由三个惰性气体供给管（230,234,238），硅烷气体供给管（240），DCS气体供给管（250），WF6气体供给管（255）和NF3气体 供应管（260）。 多个开/关阀（232,236,239,242,252,256,262），过滤器（222），气流控制器（224）安装在每个气体供应管（230,234,238,240,250,255,260）处。
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公开(公告)号：KR102205898B1
公开(公告)日：2021-01-21
申请号：KR1020130106309
申请日：2013-09-04
Applicant: 삼성전자주식회사 , 사회복지법인 삼성생명공익재단
Abstract: 본발명의일 측면에따라서의료영상들을정합(registration)하는방법은, 비실시간으로획득된제1 의료영상에서적어도하나의지점을선택받는단계; 상기제1 의료영상으로부터, 상기선택된지점을포함하는해부학적개체및 상기선택된지점의인근에위치하는해부학적개체를각각추출하는단계; 실시간으로획득되는제2 의료영상으로부터, 상기제1 의료영상에서추출된해부학적개체들에대응되는해부학적개체들을추출하는단계; 및상기제1 의료영상과상기제2 의료영상으로부터추출된해부학적개체들간의기하학적관계를이용하여, 상기제1 의료영상과상기제2 의료영상을정합하는단계를포함한다.
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