公开(公告)号：KR100725938B1

公开(公告)日：2007-06-11

申请号：KR1020050045768

申请日：2005-05-30

Applicant: 삼성전자주식회사

Inventor： 김용규 ,  전진호 ,  권경수

IPC: H01L21/762

CPC classification number: H01L21/76224

Abstract: 본 발명은 신뢰성있는 갭 필 공정을 진행할 수 있는 반도체 제조 장치 및 이를 이용한 반도체 제조 공정 방법에 관한 것이다. 개시된 본 발명은 웨이퍼가 놓이는 척이 배치되고 상기 웨이퍼에 대한 에칭 공정에 사용되는 에칭 가스로 이루어진 플라즈마가 발생되는 챔버와, 상기 웨이퍼에 대한 에칭 공정의 완료점을 검출하는 센서와, 상기 센서와 연결되어 상기 에칭 공정의 완료점을 결정하는 제어부를 포함하는 것을 특징으로 한다. 이에 의하면, 엔드포인트 디텍션 방식으로 산화막을 에칭함으로써 산화막 증착 두께가 다르더라도 균일한 에칭 효과를 얻을 수 있게 된다. 이에 따라, 에칭의 불균일성에 의해 나타날 수 있는 갭 필 공정의 불안정성을 제거하여 신뢰성 있는 갭 필 공정을 실현할 수 있는 효과가 있다.
반도체, 에칭, 고밀도플라즈마(HDP), 엔드포인트디텍션(EPD), 갭필

公开(公告)号：KR100578136B1

公开(公告)日：2006-05-10

申请号：KR1020040005085

申请日：2004-01-27

Applicant: 삼성전자주식회사

Inventor： 하민호 ,  전진호 ,  정이하

IPC: H01L21/205

CPC classification number: C23C16/45578

Abstract: 플라즈마 강화된 화학기상 증착 장비를 제공한다. 이 장비는 공정 챔버을 관통하는 가스 분사관을 포함한다. 가스 분사관에는 그것의 측벽일부로 이루어진 분사 영역이 배치된다. 분사 영역 내에는 복수개의 분사 슬롯들이 배치된다. 분사 슬롯들에 의하여 공정 챔버의 내부에 유도된 플라즈마력이 가스 분사관 내로 침투하는 현상을 최소화하여 파티클성 오염을 최소화할 수 있다.

公开(公告)号：KR100397889B1

公开(公告)日：2003-09-19

申请号：KR1020010002814

申请日：2001-01-18

Applicant: 삼성전자주식회사

Inventor： 최철환 ,  전진호 ,  김용갑 ,  이종승 ,  이민우 ,  김경태 ,  조찬형

IPC: H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/42 ,  C23C16/45561 ,  F17D1/04

Abstract: A residual gas removing device for a gas supply apparatus in a semiconductor fabricating facility, includes a low stress valve disposed between a mass flow controller and a chamber. The low stress valve alternately supplies or cuts off a gas from the mass flow controller to the chamber. A WF6 gas removing apparatus is in flow communication with a gas inlet line of the low stress valve to remove a residual WF6 gas in the gas inlet line, before proceeding with a subsequent deposition step.

Abstract translation: 用于半导体制造设备中的气体供应设备的残留气体去除装置包括设置在质量流量控制器和腔室之间的低应力阀。 低应力阀交替地将来自质量流量控制器的气体供应或切断至腔室。 在进行随后的沉积步骤之前，WF6气体去除装置与低应力阀的气体入口管线流动连通以去除气体入口管线中的残留WF6气体。

公开(公告)号：KR100397177B1

公开(公告)日：2003-09-06

申请号：KR1020010021067

申请日：2001-04-19

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  임전식 ,  이종승

IPC: H01L21/316

CPC classification number: C23C16/401 ,  C23C16/56

Abstract: A semiconductor device and the methods used in production, particularly the insulating layer comprising creating a process atmosphere in a chamber for forming a fluidal insulating layer by: flowing an oxidising gas at an oxidising gas flow rate for forming an oxidising atmosphere, flowing a first carrier gas at a first carrier gas flow rate and flowing a second carrier gas at a second carrier gas flow rate, the second carrier gas flow rate being greater then the first carrier gas flow rate, forming the fluidal insulating layer on a substrate positioned in the chamber by flowing the oxidising gas at the oxidising gas flow rate, flowing the first carrier gas at the first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, flowing the second carrier gas at the second carrier gas flow rate while carrying a second impurity including phosphorous flowing at a second impurity flow rate, the second carrier gas flow rate being greater than the first carrier gas flow rate, and flowing a silicon source material at a silicon source flow rate.

Abstract translation: 一种半导体器件和生产中使用的方法，特别是绝缘层，包括：在用于形成流体绝缘层的腔室中产生工艺气氛，通过：以氧化气体流速流动氧化气体以形成氧化气氛，使第一载体 气体以第一载气流速流动并且以第二载气流速流动第二载气，所述第二载气流速大于所述第一载气流速，在位于所述腔室中的基板上形成所述流体绝缘层 通过使氧化气体以氧化气体流量流动，使第一载气以第一载气流量流动，同时载送包含以第一杂质流率流动的硼的第一杂质，使第二载气在第二载气流 同时承载包括以第二杂质流量流动的磷的第二杂质，第二载气流量大于 第一载气流量，并且使硅源材料以硅源流量流动。

公开(公告)号：KR1020020044209A

公开(公告)日：2002-06-15

申请号：KR1020000073191

申请日：2000-12-05

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  임전식 ,  이종승 ,  김경태

IPC: H01L21/20

CPC classification number: H01L21/02274 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/3145

Abstract: PURPOSE: A method for fabricating a PE-SiON thin film is provided to prevent an abnormal reaction of NH3 gas and to remarkably reduce particles generated in forming the PE-SiON thin film, by making SiH4 gas not bypassed and by simultaneously making the SiH4 gas and the other reaction gas like N2, NH3 and N2O flow to the inside of a chamber before radio frequency(RF) power turns on. CONSTITUTION: A plurality of reaction gas like SiH4, N2, NH3 and N2O flows to the inside of the chamber at the same time without bypassing the SiH4 gas. The PE-SiON thin film is deposited in the chamber by turning on the RF power. The RF power turns on three seconds after the plurality of reaction gas starts to flow.

Abstract translation: 目的：提供一种制造PE-SiON薄膜的方法，以防止NH 3气体的异常反应，并且通过使SiH 4气体不被旁路并同时制造SiH 4气体而显着降低在形成PE-SiON薄膜时产生的颗粒 在射频（RF）电源打开之前，像N2，NH3和N2O这样的其他反应气体流到室内。 构成：像SiH4，N2，NH3和N2O这样的多个反应气体同时流到室内，而不会绕过SiH4气体。 通过接通RF功率将PE-SiON薄膜沉积在室中。 在多个反应气体开始流动之后，RF功率开启三秒钟。

公开(公告)号：KR1020020035978A

公开(公告)日：2002-05-16

申请号：KR1020000065821

申请日：2000-11-07

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  최병덕 ,  김경태

IPC: H01L21/00

Abstract: PURPOSE: A vacuum pressure system is provided to improve driving efficiency of a vacuum pump and shorten an interval of time for forming a vacuum pressure, by making a vacuum pressure state inside a chamber have more than a predetermined value and by supplying gas corresponding to an excessive vacuum pressure. CONSTITUTION: Sealing is selectively maintained in a chamber(12a,12b). The vacuum pump(33) selectively supplies a vacuum pressure, connected to the chamber through an exhaust pipe having a throttle valve(32). A sensor(34) measures the vacuum pressure state inside the chamber. A gas supply unit(36) supplies predetermined gas to the inside of the chamber, connected to the chamber by a connection pipe(41). An intercepting unit(42) controls the flow rate of the predetermined gas to the chamber, installed on the connection pipe. A controller controls driving of the throttle valve, the vacuum pump and the intercepting unit through a measured signal of the sensor.

Abstract translation: 目的：提供一种真空压力系统，以提高真空泵的驱动效率，缩短形成真空压力的时间间隔，通过使室内的真空压力状态达到预定值以上，并通过供给对应于 真空度过高。 构成：选择性地将密封保持在腔室（12a，12b）中。 真空泵（33）选择性地通过具有节流阀（32）的排气管提供连接到室的真空压力。 传感器（34）测量室内的真空压力状态。 气体供给单元（36）通过连接管（41）向室内供给预定的气体。 拦截单元（42）控制安装在连接管上的预定气体到腔室的流量。 控制器通过传感器的测量信号来控制节气门，真空泵和拦截单元的驱动。

公开(公告)号：KR1020010103979A

公开(公告)日：2001-11-24

申请号：KR1020000025325

申请日：2000-05-12

Applicant: 삼성전자주식회사

Inventor： 이종승 ,  서태욱 ,  전진호 ,  송래형

IPC: H01L21/205

Abstract: 본 발명은 반응기로 원료 물질 기체들을 공급하기 위한 기체 공급 시스템을 갖는 화학 기상 증착 장비에 관한 것이다. BPSG 막을 증착하기 위한 화학 기상 증착 장비에 있어서, 공정 기체들이 유입되어 증착 공정이 진행되는 반응기, 액체 상태인 원료 물질들을 기화시켜 반응기로 공급하는 증발 장치, 증발 장치에서 기화된 원료 물질들을 배출시키기 위한 운반 기체를 공급하는 운반 기체 공급원 및 증발 장치 각각에 독립적으로 연결된 진공 펌프가 구비된다. 유량이 불안정하게 조절되는 동안에는 원료 물질 기체들이 진공 펌프를 통해 배기되고, 기체 흐름이 안정화되면 반응기로 주입된다. 따라서, 불순물의 함량이 균일한 BPSG 막을 형성할 수 있다.

公开(公告)号：KR1020010077412A

公开(公告)日：2001-08-17

申请号：KR1020000005206

申请日：2000-02-02

Applicant: 삼성전자주식회사

Inventor： 전진호 ,  김종욱 ,  최병덕 ,  서태욱

IPC: H01L21/316

Abstract: PURPOSE: A method for manufacturing an insulation layer using an oxygen carrier is provided to improve uniformity of a layer in a deposition process, by using oxygen gas as carrier gas in a process for depositing the insulation layer so that the number of times particles of reaction gas collide with each other is increased. CONSTITUTION: Tetraethoxysilane(TEOS) of a liquid state is vaporized to generate TEOS gas. Oxygen gas is analyzed by using an apparatus for generating ozone, and O2 gas and O3 gas are generated. The TEOS gas, the O3 gas and the O2 gas are inserted into a process chamber(100). The TEOS gas, the O3 gas and the O2 gas react with one after another in a high temperature state to form a silicon oxide layer on a semiconductor substrate(102).

Abstract translation: 目的：提供一种使用氧载体制造绝缘层的方法，以便在沉积绝缘层的工艺中，通过使用氧气作为载气来提高沉积工艺中的层的均匀性，使得反应粒子的次数 气体相互碰撞增加。 构成：将液态的四乙氧基硅烷（TEOS）蒸发以产生TEOS气体。 通过使用产生臭氧的装置分析氧气，产生O 2气体和O 3气体。 将TEOS气体，O 3气体和O 2气体插入处理室（100）中。 TEOS气体，O 3气体和O 2气体在高温状态下一个接一个地反应，以在半导体衬底（102）上形成氧化硅层。

公开(公告)号：KR1020010027268A

公开(公告)日：2001-04-06

申请号：KR1019990038947

申请日：1999-09-13

Applicant: 삼성전자주식회사

Inventor： 전진호

IPC: H01L21/31

Abstract: PURPOSE: A vacuum apparatus for manufacturing a semiconductor is provided to form a uniform thickness of a layer and to minimize a process defect, by making gas pumped through a pumping screen settled in an upper portion of a chamber base flow at uniform speed so that a reaction rate of the gas on a wafer becomes uniform. CONSTITUTION: A plurality of pumping holes is installed in a chamber base. A wafer(31) is settled in an upper portion of the chamber base. A pumping screen(40) having a plurality of holes is settled in the upper portion of the chamber base. Holes of the pumping screen formed in a position corresponding to the pumping hole of the chamber base are larger than holes located in other positions.

Abstract translation: 目的：提供一种用于制造半导体的真空装置，以形成均匀的层厚度，并且通过使气体泵浦通过沉积在室底部的上部的泵送屏幕中的气体以均匀的速度流动，从而使得 晶片上的气体的反应速率变得均匀。 构成：多个抽吸孔安装在腔室底座中。 晶片（31）沉积在室底部的上部。 具有多个孔的抽水筛（40）沉淀在室底部的上部。 形成在与腔室基座的泵送孔对应的位置的泵送孔的孔大于位于其他位置的孔。

公开(公告)号：KR1020000051272A

公开(公告)日：2000-08-16

申请号：KR1019990001612

申请日：1999-01-20

Applicant: 삼성전자주식회사

Inventor： 전진호 ,  김훈기 ,  박태융

IPC: H01L21/205

Abstract: PURPOSE: An apparatus for loading a wafer in a chemical vapor deposition(CVD) system is provided to improve productivity and is adaptable to a highly integrated semiconductor device, by having the wafer receive uniform heat through a susceptor in a CVD process. CONSTITUTION: An apparatus for loading a wafer(36) in a chemical vapor deposition(CVD) system comprises a susceptor(20), a first heater(22), a second heater(24) and a pocket(26). The susceptor has a top surface, a bottom surface(30) and an external surface(28) on which a loop-type groove(32) from the bottom surface is formed. The first heater positioned in the center of the bottom surface of the susceptor transfers heat to the susceptor. The second heater positioned in the groove of the susceptor transfers heat to the susceptor. The pocket is formed to a predetermined depth in the direction from the top surface of the susceptor to the bottom surfaced and is loaded with the wafer.

Abstract translation: 目的：提供一种用于在化学气相沉积（CVD）系统中加载晶片的装置，以通过使CVD晶片在CVD工艺中通过基座承受均匀的热量来提高生产率并且适用于高度集成的半导体器件。 构成：用于将化学气相沉积（CVD）系统中的晶片（36）装载的装置包括基座（20），第一加热器（22），第二加热器（24）和凹穴（26）。 基座具有顶表面，底表面（30）和外表面（28），从底表面形成环形凹槽（32）。 位于基座底面中心的第一个加热器将热量传递到基座。 定位在基座的凹槽中的第二个加热器将热量传递到基座。 在从基座的顶表面到底部的方向上形成预定深度的凹坑，并将其装载到晶片。