Abstract:
A decoder and a decoding method are provided to raise throughput by using a double buffering structure and a pipelining technique. While a first code word is transmitted to the first memory, first syndrome values are calculated from the first code word(S1). While an error locator polynomial is calculated from the first syndrome values, a second coding word is transmitted to a second memory and second syndrome values are calculated from the second code word(S3).
Abstract:
A firmware download scheme capable of correcting error is provided to correct the error of firmware downloaded from a host to an electronic device based on an ECC(Error Checking and Correction) and CRC(Cyclic Redundancy Check) bits included in a firmware data signal packet received from the host, thereby increasing integrity of the firmware. An interface(210) receives a firmware data signal including an ECC(Error Correction Code) from the outside. An ECC unit(250) corrects error included in the firmware data signal and stores the corrected data signal to a non-volatile memory(260) such as a flash memory. A buffer(220) temporarily stores the firmware data signal received through the interface. The error correction circuit corrects the error included in the firmware data signal stored in the buffer by control of a CPU(240). A firmware data signal packet received from the outside includes data, and ECC and CRC(Cyclic Redundancy Check) bits.
Abstract:
A memory card system, a data transmitting method of the memory card system, and a semiconductor memory device are provided to transmit data to a host in synchronization with a read clock signal generated by an internal clock generator of a memory card to maintain a set-up time margin sufficient for a read operation. A memory card system(200) includes a host(210) and a memory card(220). The host generates a read command. The memory card generates an internal read clock signal in response to the read command and transmits data to the host in synchronization with the read clock signal. The memory card includes a read clock generator(224) for generating the read clock signal. The host includes a write clock generator. When the host stores data in the memory card, the memory card stores the data in synchronization with the write clock signal generated by the write clock generator.
Abstract:
A non-volatile memory device for generating a data strobe signal during data read operation and a method thereof are provided to assure proper data set-up time margin and data hold time margin even though read cycle time decreases. A non-volatile memory device comprises a latch unit(220), a non-volatile memory cell array(310) for storing data and a control unit. The control unit receives a read command and a read address outputted from a memory controller(200), and generates a data strobe signal on the basis of the received read command, and reads data corresponding to the received read address from the non-volatile memory cell array, and outputs the read-out data to the latch unit. The latch unit outputs data outputted from the control unit to the memory controller in response to the data strobe signal.