公开(公告)号：KR1020160069598A

公开(公告)日：2016-06-17

申请号：KR1020140175195

申请日：2014-12-08

Applicant: 삼성전자주식회사

Inventor： 조수현 ,  김기석 ,  양성석 ,  김용일 ,  이승환

IPC: H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: 본발명의일 실시예에따른반도체발광소자는, 제1 도전형반도체층, 활성층및 제2 도전형반도체층을포함하는메사구조의발광구조물; 상기발광구조물의주변의상기제1 도전형반도체층상에구비되며, 규칙적으로배열된마이크로구조물들; 및적어도일부의상기마이크로구조물들상에배치되는상기제1 도전형반도체층의굴절률보다작은굴절률을갖는경사굴절층을포함할수 있다.

Abstract translation: 提供一种提高光提取效率的半导体发光器件及其制造方法。 根据本发明的实施例，半导体发光器件包括：具有包括第一导电半导体层，有源层和第二导电半导体层的台面结构的发光结构; 设置在发光结构周围的第一导电半导体层上的规则排列的微结构; 以及具有比第一导电半导体层的折射率小的折射率并且布置在至少一部分微结构上的倾斜折射层。

公开(公告)号：KR1020140006485A

公开(公告)日：2014-01-16

申请号：KR1020120073511

申请日：2012-07-05

Applicant: 삼성전자주식회사

Inventor： 조수현 ,  이종호 ,  이진현 ,  임찬묵 ,  김진환

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/22 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/20 ,  H01L2933/0016

Abstract: A method for manufacturing a multicell array semiconductor light emitting device according to an embodiment of the present invention includes the steps of: successively forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the upper side of a substrate; etching and removing the second conductive semiconductor layer and the active layer to expose the upper side of the first conductive semiconductor layer in each area which is regularly separated on the second conductive semiconductor layer; and separating a unit light emitting cell by etching a part of the exposed part of the first conductive semiconductor layer. The step of separating the unit light emitting cell by etching the first conductive semiconductor layer is not performed on the outer side of the substrate.

Abstract translation: 根据本发明实施例的多芯体阵列半导体发光器件的制造方法包括以下步骤：在衬底的上侧依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除第二导电半导体层和有源层，以在第二导电半导体层上规则分离的每个区域中露出第一导电半导体层的上侧; 以及通过蚀刻所述第一导电半导体层的暴露部分的一部分来分离单位发光单元。 通过蚀刻第一导电半导体层分离单位发光单元的步骤不在基板的外侧进行。

公开(公告)号：KR1020000042645A

公开(公告)日：2000-07-15

申请号：KR1019980058895

申请日：1998-12-26

Applicant: 삼성전자주식회사

Inventor： 조수현

IPC: G09G1/00

Abstract: PURPOSE: A spot removing circuit of an image display apparatus is provided to remove a spot at a screen by applying a high voltage to a first grid according to a switch operation of a switch device at power-off or at a mode change. CONSTITUTION: A spot removing circuit of an image display apparatus comprises an FBT(100) and a first grid voltage control part(200). The first grid voltage control part(200) consists of a switching control part(210), a switching device(220) and a voltage supply part(230). The switching control part(210) generates a drive signal by charging a negative high voltage supplied from the FBT(100) when the image display apparatus is normally operated, and by discharging the charged voltage at power-off or at a mode change. The switching device(220) is switched on according to the drive signal. When the negative high voltage is inputted from the FBT(100), the voltage supply part(230) charges the inputted voltage and applies the inputted voltage to a first grid(G1). When the negative high voltage is not inputted, the voltage supply part(230) discharges the charged voltage, and makes the discharged voltage at an activation of the switching device be applied directly to the first grid(G1).

Abstract translation: 目的：提供图像显示装置的去斑电路，以便在断电或模式改变时根据开关装置的开关操作向第一栅格施加高电压以去除屏幕上的点。 构成：图像显示装置的去斑电路包括FBT（100）和第一电网电压控制部（200）。 第一电网电压控制部分（200）包括开关控制部分（210），开关装置（220）和电压供应部分（230）。 开关控制部分（210）通过在图像显示装置正常工作时对从FBT（100）提供的负高电压进行充电，并且在断电或模式改变时放电充电电压来产生驱动信号。 切换装置（220）根据驱动信号被接通。 当从FBT（100）输入负高电压时，电压供给部（230）对输入的电压进行充电，并将输入的电压施加到第一栅极（G1）。 当未输入负高电压时，电压供给部（230）对充电电压进行放电，使切换装置的启动时的放电电压直接施加到第一栅极（G1）。

公开(公告)号：KR200123653Y1

公开(公告)日：1998-10-01

申请号：KR2019930032184

申请日：1993-12-30

Applicant: 삼성전자주식회사

Inventor： 조수현

IPC: H04R1/10

Abstract: 본 고안은 써라운드 음향효과가 가능한 헤드폰에 관한 것이다.
종래의 오디오 시스템에서 3차원의 음향효과를 청취하기 위해서는 청취자를 중심으로 해서 주변에 고출력의 스피커를 배치하였기 때문에 많은 비용이 들고 설치장소도 많이 차지하였다.
본 고안은 이를 감안하여 헬멧 또는 헤드기어와 같은 구조와 같은 스피커 형성부를 형성하여 그 내측에 적절한 위치에 적절한 갯수의 스프커를 형성하여 써라운드 입체음향을 들을 수 있게 한 것이다.