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    실리콘 기판을 채용한 발광소자 패키지의 절단 방법
    3.
    发明公开
    실리콘 기판을 채용한 발광소자 패키지의 절단 방법 无效
    具有硅衬底的发光元件封装的切割方法

    公开(公告)号：KR1020140009890A

    公开(公告)日：2014-01-23

    申请号：KR1020120076939

    申请日：2012-07-13

    Applicant: 삼성전자주식회사

    Inventor： 김의석 ,  김추호 ,  조수현 ,  지원수

    IPC: H01L33/48 ,  H01L21/78

    CPC classification number: H01L33/48 ,  H01L24/97 ,  H01L33/0095 ,  H01L2224/48091 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: According to one embodiment of the present invention, a method for cutting a light emitting diode package comprises the steps of: preparing a silicon substrate on which a plurality of light emitting diode chips are loaded on the surface thereof and a transparent material layer for covering the light emitting diode chips is formed; removing the transparent material layer between the light emitting diode chips along the cutting line by a mechanical cutting method; forming, on the silicon substrate, a scribing line corresponding to the cutting line by a laser processing method; and cutting the silicon substrate along the scribing line by applying mechanical impact to the silicon substrate so that the silicon substrate is divided into individual light emitting diode packages, thereby improving the productivity of the light emitting diode package cutting process and preventing the transparent material layer from being damaged or deformed.

    Abstract translation: 根据本发明的一个实施例，一种用于切割发光二极管封装的方法包括以下步骤：制备其上在其表面上装载有多个发光二极管芯片的硅衬底和用于覆盖 形成发光二极管芯片; 通过机械切割方法沿着切割线去除发光二极管芯片之间的透明材料层; 在硅基板上通过激光加工方法形成对应于切割线的划线; 以及通过对硅衬底施加机械冲击来沿着划刻线切割硅衬底，使得硅衬底被分成单独的发光二极管封装，从而提高发光二极管封装切割工艺的生产率并防止透明材料层 被损坏或变形

    반도체 발광장치, 발광모듈 및 조명장치
    4.
    发明公开
    반도체 발광장치, 발광모듈 및 조명장치 审中-实审
    半导体发光装置，发光模块和照明装置

    公开(公告)号：KR1020130095054A

    公开(公告)日：2013-08-27

    申请号：KR1020120016456

    申请日：2012-02-17

    Applicant: 삼성전자주식회사

    Inventor： 이진현 ,  김범준 ,  채승완 ,  임찬묵 ,  이종호 ,  김진환 ,  조수현

    IPC: H01L33/48 ,  H01L33/62

    CPC classification number: H01L33/08 ,  F21K9/23 ,  F21V3/00 ,  F21V29/507 ,  F21V29/74 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: PURPOSE: A semiconductor light emitting device, a light emitting module and an illumination apparatus are provided to minimize the decrease of an effective light emitting area by forming a middle separation layer of electric insulation in a semiconductor laminate. CONSTITUTION: A semiconductor laminate is divided by an isolation area. The semiconductor laminate includes light emitting cells. A middle separation layer (53) is formed between a base semiconductor layer and a first conductivity type semiconductor layer. First and second electrodes are connected to the first conductivity type semiconductor layer and a second conductive semiconductor layer respectively. A line part (57) connects the first and second electrodes of different light emitting cells.

    Abstract translation: 目的：提供半导体发光器件，发光模块和照明设备，以通过在半导体层叠体中形成电绝缘的中间分离层来最小化有效发光面积的减小。 构成：半导体层压板被隔离区划分。 半导体层叠体包括发光单元。 中间分离层（53）形成在基底半导体层和第一导电型半导体层之间。 第一和第二电极分别连接到第一导电类型半导体层和第二导电半导体层。 线部分（57）连接不同发光单元的第一和第二电极。

    레이저 어블레이션을 이용한 관통 실리콘 비아 형성방법
    5.
    发明公开
    레이저 어블레이션을 이용한 관통 실리콘 비아 형성방법 无效
    通过使用激光消除形成硅的方法

    公开(公告)号：KR1020130083721A

    公开(公告)日：2013-07-23

    申请号：KR1020120004508

    申请日：2012-01-13

    Applicant: 삼성전자주식회사

    Inventor： 김의석 ,  방상규 ,  조수현 ,  지원수 ,  김추호

    IPC: H01L33/48 ,  H01L23/045

    CPC classification number: H01L21/2633 ,  H01L21/76898 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: PURPOSE: A method of forming a through-silicon via by using laser ablation is provided to form a long groove firstly and form a through-hole by using a grinding process secondly, thereby simplifying a process of forming the through-silicon via. CONSTITUTION: A method of forming through-silicon vias by using laser ablation comprises the steps of: preparing a silicon wafer (210); laser drilling to form a plurality of grooves (220) by irradiating a laser beam (L) onto a first surface (211) of the silicon wafer; and grinding a second surface (212) of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the second surface of the silicon wafer. The step of laser drilling comprises using an ultrashort pulse laser (230). In the step of grinding, an upper surface of the silicon wafer is ground.

    Abstract translation: 目的：提供通过使用激光烧蚀形成贯通硅通孔的方法，以首先形成长沟槽，然后通过使用研磨工艺形成通孔，从而简化了形成硅通孔的工艺。 构成：通过使用激光烧蚀形成穿硅通孔的方法包括以下步骤：制备硅晶片（210）; 激光钻孔以通过将激光束（L）照射到硅晶片的第一表面（211）上形成多个凹槽（220）; 以及研磨所述硅晶片的第二表面（212）以通过暴露所述硅晶片的所述第二表面上的凹槽来形成多个穿硅通孔。 激光钻孔的步骤包括使用超短脉冲激光器（230）。 在研磨步骤中，研磨硅晶片的上表面。

    에어나이프 장치와 이를 포함하는 기판건조장치
    6.
    发明公开
    에어나이프 장치와 이를 포함하는 기판건조장치 无效
    具有相同功能的空气刀具和底盘干燥装置

    公开(公告)号：KR1020070087433A

    公开(公告)日：2007-08-28

    申请号：KR1020060017830

    申请日：2006-02-23

    Applicant: 삼성전자주식회사

    Inventor： 조수현 ,  천영진

    IPC: H01L21/304

    Abstract: An air knife apparatus and a substrate dry apparatus including the same are provided to remove and dry liquid of a substrate surface efficiently by using a liquid controlling unit. An air spraying unit(4) is formed on a body portion(1). A liquid controlling portion(2) is located on a front of the body portion to define a liquid dry space(3). The liquid dry space is extended. The liquid controlling portion includes a driving portion controlling volume of the liquid dry space. The driving portion includes a first driving portion and a second driving portion. The first driving portion controls a width(X) of the liquid dry space. The second driving portion controls a height(Z) of the liquid dry unit. The liquid controlling portion includes an X extending portion(220) defining the width of the liquid dry space. The X extending portion includes plural sub-extending portion.

    Abstract translation: 提供一种气刀装置和包括该气刀装置的基片干燥装置，通过使用液体控制装置有效地去除和干燥基片表面的液体。 空气喷射单元（4）形成在主体部分（1）上。 液体控制部分（2）位于主体部分的前部以限定液体干燥空间（3）。 液体干燥空间延长。 液体控制部分包括控制液体干燥空间的体积的驱动部分。 驱动部分包括第一驱动部分和第二驱动部分。 第一驱动部控制液体干燥空间的宽度（X）。 第二驱动部分控制液体干燥单元的高度（Z）。 液体控制部分包括限定液体干燥空间宽度的X延伸部分（220）。 X延伸部分包括多个子延伸部分。

    청음 위치 적정도 표시장치
    7.
    实用新型
    청음 위치 적정도 표시장치 无效
    聆听位置正确性指标

    公开(公告)号：KR2019960015488U

    公开(公告)日：1996-05-17

    申请号：KR2019940026173

    申请日：1994-10-05

    Applicant: 삼성전자주식회사

    Inventor： 조수현

    IPC: G11B27/36

    Abstract: 본고안은다채널을다스피커로재생하는음향재생시스템에서청음자의청음위치를감지하여청음위치의적정여부를표시해주어최적의위치에서청음이가능하도록하는청음위치적동도표시장치에관한것으로청음자의위치가부적절하여최적의청음조건을만족시키지못하는문제점을없앤것이다. 이러한본 고안은음향재생시스템구동시각 스피커에설치된청음위치감지수단에서스피커와청음자사이의거리를감지하고청음위치감지수단에서감지된출력을세트에설치된비교판단수단에서비교하여청음자의적정위치를판단한후 비교판단수단의판단결과를표시수단에서표시시켜주어청음자의청음위치적정여부를인식하도록하므로써청음자의위치를변화시켜가장적절한위치에서의청음이가능하도록한다.

    영상기기의 시청각도 자동조절장치 및 방법
    9.
    发明公开
    영상기기의 시청각도 자동조절장치 및 방법 失效

    公开(公告)号：KR1019930008567A

    公开(公告)日：1993-05-21

    申请号：KR1019910017948

    申请日：1991-10-12

    Applicant: 삼성전자주식회사

    Inventor： 조수현

    IPC: H04N5/64

    Abstract: 본 발명은 모니터를 구비하는 영상기기의 시청각도 자동조절장치에 관한 것이다. 본 시청각도 자동조절장치는 원격제어신호발생기에서 발하여진 제어신호를 감지하여 그 신호발생기의 위치를 검출하는 검출기와, 검출위치에대해 기존위치로부터의 각변위량의 산출수단 및 모니터의 회전구동수단을 포함한다. 본 발명은 또한 모니터의 시청각도 자동조절방법에도 관련한다.

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