公开(公告)号：KR100364026B1

公开(公告)日：2002-12-11

申请号：KR1020010008859

申请日：2001-02-22

Applicant: 삼성전자주식회사

Inventor： 조영주 ,  홍은기 ,  이주범

IPC: H01L21/31

CPC classification number: H01L21/02222 ,  H01L21/02164 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/3125

Abstract: 본발명은층간절연막형성방법에관한것으로서, 특히본 발명의방법은금속배선패턴이형성된반도체기판상에절연막을형성하고, 금속배선패턴의상면이노출되도록상기절연막을풀 CMP공정으로연마하고, 코팅막을형성하기위하여상기결과물상에폴리실라잔을포함하는스핀온 글래스코팅용액을도포하고, 코팅막을 50 내지 350℃정도로프리베이킹하고, 이어서, 300 내지 500℃정도로하드베이킹하고, 코팅막을산화분위기에서열처리한다. 따라서, 본발명에서는하드베이킹공정을수행함으로써아웃가싱되는양을최소화하여파티클발생을억제함으로써후속공정에서열처리이후코팅막의크랙발생을방지할수 있다.

公开(公告)号：KR1020000073221A

公开(公告)日：2000-12-05

申请号：KR1019990016386

申请日：1999-05-07

Applicant: 삼성전자주식회사

Inventor： 조영주

IPC: H01L27/108

Abstract: PURPOSE: A method for manufacturing a capacitor is provided to improve a conduction characteristic of a plate poly and to reduce a malfunction, by preventing the plate poly from being oxidized without reducing a reflow characteristic of a BPSG(Boron Phosphorous Silicate Glass) layer. CONSTITUTION: A storage electrode(10) of a capacitor is formed in a cell region. A conductive layer(12) for a plate electrode of the capacitor is formed on the entire surface. A first insulating layer(14) is evaporated on the conductive layer. The first insulating layer and the conductive layer in a peripheral region except the cell region are etched to expose sidewalls of the first insulating layer and conductive layer. A second insulating layer is evaporated on the entire surface of a substrate. The second insulating layer is etched to form a spacer(18a) on the sidewalls of the first insulating layer and conductive layer. A BPSG(Boron Phosphorous Silicate Glass) layer is formed on the entire surface of the substrate by a reflow process.

Abstract translation: 目的：提供一种用于制造电容器的方法，通过防止板聚氧化而不降低BPSG（硼磷酸硅酸盐玻璃）层的回流特性来改善板状聚合物的导电特性并减少故障。 构成：在电池区域形成电容器的存储电极（10）。 在整个表面上形成用于电容器的平板电极的导电层（12）。 第一绝缘层（14）在导电层上蒸发。 蚀刻除了单元区域之外的周边区域中的第一绝缘层和导电层，以暴露第一绝缘层和导电层的侧壁。 在基板的整个表面上蒸发第二绝缘层。 第二绝缘层被蚀刻以在第一绝缘层和导电层的侧壁上形成间隔物（18a）。 通过回流工艺在基板的整个表面上形成BPSG（硼磷酸硅酸盐玻璃）层。