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公开(公告)号：KR101404353B1
公开(公告)日：2014-06-12
申请号：KR1020120118070
申请日：2012-10-23
Applicant: 전남대학교산학협력단
IPC: H01L31/042 , C09K11/08 , H01L31/18
CPC classification number: Y02E10/542 , Y02P70/521
Abstract: 형광체를 포함하는 태양전지 및 이의 제조방법이 제공된다. 형광체를 포함하는 태양전지는 후면 전극, 광흡수층, 버퍼층, 윈도우층 및 전면 전극이 순차 적층된 구조를 채용하되, 광흡수층은 일정한 비율로 형광체를 포함하여 태양전지의 광전류 밀도가 증가되고, 태양전지의 광전 변환효율이 향상될 수 있다. 또한, 형광체를 포함하는 태양전지의 제조방법은 기판 상에 후면 전극을 형성하는 단계, 후면 전극 상에 형광체가 포함된 광흡수층을 형성하는 단계, 광흡수층 상에 버퍼층을 형성하는 단계, 버퍼층 상에 윈도우층을 형성하는 단계 및 윈도우층 상에 전면 전극을 형성하는 단계를 포함하여 형광체를 포함하는 별도의 층을 배치하지 않고, 직접 광흡수층에 형광체를 포함시키는 간단하고 용이한 방법으로 태양전지의 광전 변환효율을 향상시킬 수 있다.
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公开(公告)号：KR1020130126289A
公开(公告)日：2013-11-20
申请号：KR1020120050293
申请日：2012-05-11
Applicant: 전남대학교산학협력단
Abstract: A gas sensor and a method for manufacturing the gas sensor are provided. The gas sensor according to the present invention is able to rapidly detect detection target gas stably in terms of chemistry by employing a p-type thin film compound semiconductor layer, to cause the chemical reaction of the gas molecules on a p-n bonding interface by using accurate characteristics of the p-type thin film compound semiconductor layer and the porosity of a porous compound semiconductor layer, and to reduce the reaction and hour time. Also, the method for manufacturing the gas sensor is able to sputter and deposit a precursor thin film for a p-type compound semiconductor on a substrate, to form a p-type thin film compound semiconductor layer through a step for heat-treating the precursor thin film, and to manufacture a gas sensor that easily and simply gets excellent characteristics by forming an n-type porous compound semiconductor layer on the p-type thin film compound semiconductor layer through a step for growing an n-type metal oxide nanorod using a chemical bath deposition (CBD).
Abstract translation: 提供气体传感器和制造气体传感器的方法。 根据本发明的气体传感器能够通过使用p型薄膜化合物半导体层，在化学上稳定地快速检测检测目标气体，通过使用精确的方式使气体分子在pn键合界面上发生化学反应 p型薄膜化合物半导体层的特性和多孔化合物半导体层的孔隙率，并且减少反应和时间。 此外，制造气体传感器的方法能够在衬底上溅射沉积p型化合物半导体的前体薄膜，通过用于热处理前体的步骤形成p型薄膜化合物半导体层 并且通过在p型薄膜化合物半导体层上形成n型多孔化合物半导体层，通过用于生长n型金属氧化物纳米棒的步骤，制造气体传感器，其容易且简单地获得优异的特性， 化学浴沉积（CBD）。
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公开(公告)号：KR1020120113604A
公开(公告)日：2012-10-15
申请号：KR1020110031389
申请日：2011-04-05
Applicant: 전남대학교산학협력단
Abstract: PURPOSE: A manufacturing method of zinc oxide thin film using group III salt and oxidation zinc thin film manufactured by the same are provided to manufacture oxidized zinc thin film having a plurality of nano-rods with high aspect ratio. CONSTITUTION: A manufacturing method of zinc oxide thin film using group III salt comprises the following steps: providing a solution for zinc oxide hydrothermal synthesis including the group III salt; placing a substrate(10) in the solution for zinc oxide hydrothermal synthesis; and growing the oxidation zinc thin film(30) by heating the solution for zinc oxide hydrothermal synthesis. The oxidized zinc thin film includes a plurality of nano-rods grown up in the upper direction of the substrate. The nano-rods have the aspect ratio of 5-20. The group III salt which is included in the solution for zinc oxide hydrothermal synthesis includes one or more of Al, Ga and In.
Abstract translation: 目的：提供使用其制造的III族盐和氧化锌薄膜的氧化锌薄膜的制造方法，以制造具有高纵横比的多个纳米棒的氧化锌薄膜。 构成：使用III族盐的氧化锌薄膜的制造方法包括以下步骤：提供包括III族盐的氧化锌水热合成溶液; 将基底（10）放置在氧化锌水热合成溶液中; 并通过加热氧化锌水热合成溶液来生长氧化锌薄膜（30）。 氧化锌薄膜包括在基板的上方生长的多个纳米棒。 纳米棒的长宽比为5-20。 包含在氧化锌水热合成溶液中的III族盐包括Al，Ga和In中的一种或多种。
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