플라즈마 전해 산화법에 사용되는 전해질 내SiO₂농도의 분석방법 및 이를 이용한 전해질의수명연장방법
    36.
    发明授权
    플라즈마 전해 산화법에 사용되는 전해질 내SiO₂농도의 분석방법 및 이를 이용한 전해질의수명연장방법 有权
    用于等离子体电解氧化的电解质中的SIO2浓度的分析方法和使用该电解质的电解质的寿命延长方法

    公开(公告)号:KR100758895B1

    公开(公告)日:2007-09-17

    申请号:KR1020060094430

    申请日:2006-09-27

    CPC classification number: C25D21/14 C25D11/06

    Abstract: A method for analysis of the SiO2 concentration in an electrolyte for plasma electrolytic oxidation and a method for life extension of an electrolyte using the same are provided to supplement an accurate amount of SiO2 into the electrolyte by promptly analyzing Si anions polymerized in an electrolyte in which a plasma electrolytic oxidation process is carried out. A method for analysis of the SiO2 concentration in an electrolyte for plasma electrolytic oxidation comprises: a step(a) of preparing a plurality of electrolyte samples having different SiO2 concentrations; a step(b) of obtaining a calibration line showing the change of plasma anode voltage relative to the change of the SiO2 concentration in the electrolyte by measuring respective plasma anode voltages of the plurality of electrolyte samples; a step(c) of measuring a plasma anode voltage of an electrolyte collected in the same conditions as the step(b) by collecting an electrolyte on which an actual plasma electrolytic oxidation process is conducted; and a step(d) of obtaining a current concentration of SiO2 that is not polymerized in the actual plasma electrolytic oxidation process-performed electrolyte by comparing the calibration line obtained in the step(b) with the voltage measured in the step(c).

    Abstract translation: 提供了用于等离子体电解氧化的电解质中的SiO 2浓度的分析方法和使用其的电解质的寿命延长方法,以通过迅速地分析在电解质中聚合的硅阴离子来补充电解质中的精确量的SiO 2,其中 进行等离子体电解氧化处理。 用于等离子体电解氧化的电解质中的SiO 2浓度的分析方法包括:制备多个具有不同SiO 2浓度的电解质样品的步骤(a) 步骤(b)通过测量所述多个电解质样品的各个等离子体阳极电压来获得示出等离子体阳极电压相对于所述电解质中SiO 2浓度变化的变化的校准线; (c)通过收集在其上进行实际的等离子体电解氧化处理的电解质来测量在与步骤(b)相同的条件下收集的电解质的等离子体阳极电压; 以及步骤(d),通过将步骤(b)中获得的校准线与步骤(c)中测量的电压进行比较,获得在实际的等离子体电解氧化工艺执行的电解质中未聚合的SiO 2的当前浓度。

    마이크로 플라즈마법을 이용한 알루미늄 합금의 보호막형성 방법
    37.
    发明授权
    마이크로 플라즈마법을 이용한 알루미늄 합금의 보호막형성 방법 有权
    마이크로플라즈마법을이용한알루미늄합금의보호막형성방

    公开(公告)号:KR100730776B1

    公开(公告)日:2007-06-21

    申请号:KR1020060012244

    申请日:2006-02-08

    Abstract: A microplasma technology for forming a coating layer without containing an alkali metal, and a microplasma technology for removing a porous external coating layer or minimizing thickness of the porous external coating layer are provided. A method for forming a protection film on an aluminium alloy using microplasma process comprises applying an alternating current of an alternating component and a cathode component into an aqueous alkali solution of 30 to 50 deg.C at 60 Hz to form a ceramic coating layer on the aluminum surface using microplasma formed on an aluminum surface, wherein the aqueous alkali solution is 0.0136 to 0.136 M of a quarternary organic aqueous ammonium solution, and comprises a principal component of tetraethyl ammonium hydroxide, (C2H5)4NOH, as a quarternary organic aqueous ammonium-based solution, or a principal component of tetrabutyl ammonium hydroxide, [CH3(CH2)3]NOH, as the quarternary organic aqueous ammonium-based solution.

    Abstract translation: 提供了用于形成不含碱金属的涂层的微等离子体技术,以及用于去除多孔外涂层或使多孔外涂层的厚度最小化的微等离子体技术。 一种使用微等离子体工艺在铝合金上形成保护膜的方法,包括将交流组分和阴极组分的交流电施加到30至50℃的60Hz的碱性水溶液中,以形成陶瓷涂层, 使用在铝表面上形成的微等离子体的铝表面,其中所述碱性水溶液为四元有机铵水溶液0.0136至0.136M,并且包含四乙基氢氧化铵的主要成分为(C2H5)4NOH作为四元有机铵水溶液, 或四丁基氢氧化铵[CH 3(CH 2)3] NOH的主要组分作为四元有机铵基水溶液。

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