Abstract:
태양전지에사용되는광흡수층으로사용되는 CI(G)S박막제조공정에서 Chelating Agent가첨가하여, 광흡수층의원료로사용되는 CuI, InI및 NaSe의용해시 Cu 또는 In 과 complex를형성하여 Se 이온과결합을구조적으로방해함으로써, 크기가작은입자를만들수 있다. 따라서, 기공(Porosity)의크기를줄이고, 조성의균일도가향상된 CI(G)S박막을제조할수 있다. 또한, 크고각 공정별로셀렌화공정조건의변화시켜야하고, 또한, 공정조건의변화가적합하지않을경우, 제조된흡수층이나 CI(G)S박막의조성이균일도가떨어지는기존의흡수층이나 CI(G)S박막제조방법의문제점을해소할수 있다.
Abstract:
The present invention relates to a thin film solar cell and, specifically, to a method for manufacturing a thin film having an optical absorption layer including group Ib elements, group VIa elements, and group Va elements; and a thin film solar cell using the same. The present invention provides a method for manufacturing a transparent electrode of the solar cell, and particularly a method for manufacturing the optical absorption layer of the thin film solar cell, including: a substrate (100); a back side electrode layer (200) formed on the substrate; the optical absorption layer (300) formed on the back side electrode layer (200); a buffer layer (400) formed on the optical absorption layer; and a transparent electrode layer (500) formed on the buffer layer (400). The method for manufacturing the optical absorption layer of the thin film solar cell comprises the steps of: manufacturing binary nanoparticles of the group Ib elements-the group VIa elements (s100); adding a solvent, a binder, and a solution precursor including the group Va elements to the binary nanoparticles of the group Ib elements-the group VIa elements to manufacture binary nanoparticles slurry of the group Ib elements-the group VIa elements (s200); dispersing and mixing the binary nanoparticles slurry of the group Ib elements-the group VIa elements (s300); coating the binary nanoparticles slurry of the group Ib elements-the group VIa elements on the back side electrode layer (200) (s400); and heat-treating the coated nanoparticles slurry while supplying the group VIa elements (s500).