유기 유전박막을 구비한 분자 전자 소자 및 그 제조 방법
    31.
    发明公开
    유기 유전박막을 구비한 분자 전자 소자 및 그 제조 방법 失效
    具有有机介质薄膜的分子电子器件及其制造方法

    公开(公告)号:KR1020080022024A

    公开(公告)日:2008-03-10

    申请号:KR1020060103137

    申请日:2006-10-23

    Abstract: A molecular electronic device including an organic dielectric thin film and a method for fabricating the same are provided to block a penetrated electrode material from reaching a bottom electrode by increasing a distance from a molecular active layer to the bottom electrode. A molecular electronic device includes a substrate, an organic dielectric thin film(150) formed on the substrate, a molecular active layer(160) formed on the organic dielectric thin film and having a charge trap site, and an electrode(110) formed on the molecular active layer. The organic dielectric thin film comprises a molecular structure represented by M-R-T, wherein M is a sulfur-containing group or a silicon-containing group, R is a saturated or unsaturated C1 to C20 hydrocarbon group which is saturated or unsaturated with fluorine, and T is -SH, -NH2, or -COOH.

    Abstract translation: 提供了包括有机电介质薄膜的分子电子器件及其制造方法,以通过增加从分子活性层到底部电极的距离来阻止穿透的电极材料到达底部电极。 分子电子器件包括衬底,形成在衬底上的有机介电薄膜(150),形成在有机电介质薄膜上并具有电荷陷阱位置的分子活性层(160)和形成在电极 分子活性层。 有机电介质薄膜包含由MRT表示的分子结构,其中M为含硫基团或含硅基团,R为与氟饱和或不饱和的饱和或不饱和C1至C20烃基,T为 -SH,-NH2或-COOH。

    비대칭 디설파이드 정착기를 가지는 분자 전자소자용화합물 및 그 제조 방법과 그 화합물로부터 얻어지는 분자활성층을 가지는 분자 전자소자
    32.
    发明授权
    비대칭 디설파이드 정착기를 가지는 분자 전자소자용화합물 및 그 제조 방법과 그 화합물로부터 얻어지는 분자활성층을 가지는 분자 전자소자 有权
    具有非对称无定形锚固组的分子电子装置的化合物及其合成,以及具有从化合物获得的分子活性层的分子电子装置

    公开(公告)号:KR100809430B1

    公开(公告)日:2008-03-07

    申请号:KR1020060103694

    申请日:2006-10-24

    Abstract: A compound for a molecular electronic device, a method for preparing the compound, and a molecular electronic device using the compound are provided to improve the coverage of a self-assembled molecular monolayer and to allow the thickness of a molecular active layer. A compound for a molecular electronic device comprises a ruthenium-terpyridine disulfide complex represented by the formula 2, wherein R1 and R2 are a C1-C20 saturated or unsaturated hydrocarbon group substituted or unsubstituted with F, respectively. A molecular electronic device comprises a first electrode; a second electrode; and a molecular active layer which is interposed between the two electrodes and has a structure formed by the self-assembling of the compound of the formula 2 on the first electrode.

    Abstract translation: 提供分子电子器件的化合物,制备该化合物的方法和使用该化合物的分子电子器件,以改善自组装分子单层的覆盖范围并允许分子活性层的厚度。 用于分子电子器件的化合物包括由式2表示的钌 - 三联吡啶二硫化物络合物,其中R 1和R 2分别是被F取代或未取代的C 1 -C 20饱和或不饱和烃基。 分子电子器件包括第一电极; 第二电极; 以及插入在两个电极之间的分子活性层,并且具有通过在第一电极上自由组装式2的化合物而形成的结构。

    트리아진 유도체 화합물을 포함하는 유기 전계발광 소자
    33.
    发明授权
    트리아진 유도체 화합물을 포함하는 유기 전계발광 소자 失效
    包括三嗪衍生物化合物的有机电致发光元件

    公开(公告)号:KR100617324B1

    公开(公告)日:2006-08-30

    申请号:KR1020050004972

    申请日:2005-01-19

    Inventor: 이효영 추혜용

    Abstract: 트리아진 그룹으로 이루어지는 CF 화합물 (PFPT)로 구성되는 유기 화합물층을 포함하는 유기 전계발광 소자에 관하여 개시한다. 본 발명에 따른 유기 전계발광 소자는 2개의 전극과, 이들 사이에 형성된 적어도 하나의 유기 화합물층을 포함하고, 상기 유기 화합물층은 다음 식으로 표시되는 트리아진 유도체 화합물이 도핑되어 있다.

    식중, R
    1 , R
    2 , 및 R
    3 는 각각 퍼플루오로페닐렌 (perfluorophenylene) 유도체이다.
    퍼플루오로페닐 트리아진, 유기 전계발광 소자, PFPT, 도핑

    유기분자 소자의 제작 방법
    35.
    发明公开
    유기분자 소자의 제작 방법 失效
    制造有机分子装置的方法

    公开(公告)号:KR1020050025386A

    公开(公告)日:2005-03-14

    申请号:KR1020030062416

    申请日:2003-09-06

    Abstract: A method of manufacturing an organic molecular device is provided to improve the reproductivity of manufacturing processes by checking easily an adsorption degree of conductive organic molecules using the amount of current between an upper and a lower electrode. A lower electrode(43) is formed on a substrate(41). A sacrificial pattern(44) for enclosing the lower electrode is formed on the substrate. An upper electrode(45) is formed along an upper surface of the resultant structure. A nano gap(46) is formed between the lower and upper electrodes by removing the sacrificial pattern therefrom. Conductive organic molecules(47) are adsorbed onto the lower and upper electrodes within the nano gap.

    Abstract translation: 提供一种制造有机分子器件的方法,以通过使用上电极和下电极之间的电流量容易地检查导电有机分子的吸附度来提高制造工艺的再现性。 在基板(41)上形成下电极(43)。 在衬底上形成用于封闭下电极的牺牲图案(44)。 沿所得结构的上表面形成上电极(45)。 通过从其中去除牺牲图案,在下电极和上电极之间形成纳米间隙(46)。 导电有机分子(47)吸附在纳米间隙内的下电极和上电极上。

    알킬기를 갖는 스피로비플루오렌 화합물 및 그 제조방법
    36.
    发明授权
    알킬기를 갖는 스피로비플루오렌 화합물 및 그 제조방법 失效
    알킬기를갖는스피로비플루오렌화합물및그제조방알킬

    公开(公告)号:KR100449854B1

    公开(公告)日:2004-09-22

    申请号:KR1020010008989

    申请日:2001-02-22

    Abstract: PURPOSE: Provided are various spirobifluorene compounds with alkyl substituents at desired positions and their preparation method, thereby preparing derivatives each having different functions and excellent solubility to be used for polymer synthesis and as electronic materials. CONSTITUTION: Spirobifluorene compound is represented by the formula(1), wherein R1 and R2 are the same or different each other, and represent a C1-C20 linear or branched alkyl group or alkoxy group, or a thioalkyl group; and X1 and X2 are the same or different each other and represent hydrogen or halogen, or a hydroxyl group, or bone or boric ester, provided that X1 and X2 don't represent hydrogen simultaneously.

    Abstract translation: 目的:提供在所需位置具有烷基取代基的各种螺二芴化合物及其制备方法,由此制备各种具有不同功能和优异溶解性的用于聚合物合成的衍生物和作为电子材料。 构成:螺二芴化合物由式(1)表示,其中R 1和R 2彼此相同或不同,并且表示C 1 -C 20直链或支链烷基或烷氧基或硫代烷基; X1和X2彼此相同或不同,并且代表氢或卤素,或羟基,或骨或硼酸酯,条件是X1和X2不同时代表氢。

    4-설파닐알킬-3,5-디니트로-벤질 알콜 유도체 및 그의제조방법
    37.
    发明公开
    4-설파닐알킬-3,5-디니트로-벤질 알콜 유도체 및 그의제조방법 失效
    4-SULFANYLALKYL-3,5-DINITROBENZYL ALCOHOL衍生物及其制备方法

    公开(公告)号:KR1020040068677A

    公开(公告)日:2004-08-02

    申请号:KR1020030005174

    申请日:2003-01-27

    CPC classification number: C07C327/28 C07C323/16

    Abstract: PURPOSE: A novel 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol compound and its preparation method are provided, to obtain a compound useful as a molecular electron acceptor and applicable to a molecular electronic material. CONSTITUTION: The 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol compound is represented by the formula 1, wherein R is H, an alkyl group or an acetyl group; and n is an integer of 1-25. The method comprises the steps of reacting p-methylbenzoic acid with nitric acid to prepare p-methyl-3,5-dinitrobenzoic acid; reacting the p-methyl-3,5-dinitrobenzoic acid with an alkyl alcohol in the presence of a catalyst to prepare an alkyl p-methyl-3,5-dinitrobenzoate; reacting the alkyl p-methyl-3,5-dinitrobenzoate with an N-halosuccinimide to prepare an alkyl 4-halomethyl-3,5-dinitrobenzoate; converting the ester group of the alkyl 4-halomethyl-3,5-dinitrobenzoate into an alcohol group in the presence of a catalyst to prepare a 4-halomethyl-3,5-dinitrobenzyl alcohol; and reacting the 4-halomethyl-3,5-dinitrobenzyl alcohol with potassium thioacetate or an alkyl thiosodium to prepare a compound whose R is an alkyl or acetyl group or removing the alkyl or acetyl group to prepare a compound whose R is H.

    Abstract translation: 目的:提供一种新型的4-硫烷基烷基-3,5-二硝基苄醇化合物及其制备方法,以获得可用作分子电子受体的化合物并适用于分子电子材料。 构成:4-硫烷基烷基-3,5-二硝基苄醇化合物由式1表示,其中R是H,烷基或乙酰基; n为1-25的整数。 该方法包括使对甲基苯甲酸与硝酸反应制备对甲基-3,5-二硝基苯甲酸; 在催化剂存在下使对甲基-3,5-二硝基苯甲酸与烷基醇反应,制备对甲基-3,5-二硝基苯甲酸烷基酯; 使对 - 甲基-3,5-二硝基苯甲酸烷基酯与N-卤代琥珀酰亚胺反应制备4-卤代甲基-3,5-二硝基苯甲酸烷基酯; 在催化剂存在下将4-卤代甲基-3,5-二硝基苯甲酸烷基酯的酯基转化为醇基,制备4-卤代甲基-3,5-二硝基苯甲醇; 并使4-卤代甲基-3,5-二硝基苄醇与硫代乙酸钾或烷基硫代钠反应,制备R为烷基或乙酰基或除去烷基或乙酰基的化合物,制备其R为H的化合物。

    플라스틱 박막상의 인듐주석산화막 패턴 형성 방법과 그를 위한 회전 도포기
    38.
    发明授权
    플라스틱 박막상의 인듐주석산화막 패턴 형성 방법과 그를 위한 회전 도포기 失效
    플라스틱박막상의인듐주석산화막패턴형성방법과그를위한회전도포기

    公开(公告)号:KR100413971B1

    公开(公告)日:2004-01-07

    申请号:KR1020000080894

    申请日:2000-12-22

    Abstract: PURPOSE: A method of patterning an indium tin oxide layer on a plastic thin film and a rotary coater used for the method are provided to coat photoresist in uniform thickness and prevent undercut generated in the event of wet etching. CONSTITUTION: An ITO layer(11) is formed on a plastic substrate(10), and photoresist is coated on the ITO layer. Heat treatment is performed in order to remove a solvent contained in the coated photoresist. Ultraviolet rays are irradiated on a portion of the ITO layer, which is etched, using a patterned mask. The exposed portion of the photoresist is developed. Heat treatment is carried out to eliminate moisture and solvent left in the photoresist. The ITO layer is dipped in an ITO etchant using the patterned photoresist as a mask to wet-etch the ITO layer. The photoresist used as the mask is stripped.

    Abstract translation: 目的:提供一种在塑料薄膜上图案化铟锡氧化物层的方法和用于该方法的旋转涂布机,以均匀厚度涂布光致抗蚀剂并防止在湿法蚀刻的情况下产生底切。 构成:在塑料衬底(10)上形成ITO层(11),并在ITO层上涂覆光刻胶。 进行热处理以除去包含在涂覆的光致抗蚀剂中的溶剂。 使用图案化的掩模将紫外线照射在被蚀刻的ITO层的一部分上。 光刻胶的曝光部分被显影。 进行热处理以消除残留在光致抗蚀剂中的湿气和溶剂。 使用图案化的光致抗蚀剂作为掩模将ITO层浸入ITO蚀刻剂中以湿法蚀刻ITO层。 用作掩模的光刻胶被剥离。

    분자전자소자 제조방법
    39.
    发明公开
    분자전자소자 제조방법 失效
    制备分子电子器件的方法

    公开(公告)号:KR1020030089936A

    公开(公告)日:2003-11-28

    申请号:KR1020020027863

    申请日:2002-05-20

    Abstract: PURPOSE: A method for fabricating a molecular electronic device is provided to reduce a manufacturing cost by using a single crystal growth method and a selective etching method. CONSTITUTION: The first semiconductor layer(20), the second semiconductor layer, and the third semiconductor layer(40) are sequentially laminated on a substrate(10). A nanogap(35) is formed between the first semiconductor layer(20) and the third semiconductor layer(40) by etching a side of the second semiconductor layer. A metal layer is formed on a surface of the resultant. An upper part(50a) and a lower part(50b) of the resultant is electrically disconnected to each other by cutting vertically the substrate(10). A molecular electronic element(70) is coated on the upper part(50a) and the lower part(50b) near to the nanogap(35).

    Abstract translation: 目的:提供一种制造分子电子器件的方法,以通过使用单晶生长方法和选择性蚀刻方法来降低制造成本。 构成:第一半导体层(20),第二半导体层和第三半导体层(40)依次层叠在基板(10)上。 通过蚀刻第二半导体层的一侧,在第一半导体层(20)和第三半导体层(40)之间形成纳米隙(35)。 在所得物的表面上形成金属层。 通过垂直地切割基板(10),所得结果的上部(50a)和下部(50b)彼此电断开。 分子电子元件(70)涂覆在靠近纳米孔(35)的上部(50a)和下部(50b)上。

Patent Agency Ranking