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    APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS
    31.
    发明申请
    APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    在半导体加工系统中感测目标气体物种的装置和工艺

    公开(公告)号：WO2005072161A3

    公开(公告)日：2005-12-29

    申请号：PCT/US2005001409

    申请日：2005-01-14

    Applicant: ADVANCED TECH MATERIALS ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

    Inventor： CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

    IPC: G01N9/00 ,  G01N27/12 ,  G01N33/00

    CPC classification number: G01N27/16

    Abstract: A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.

    Abstract translation: 一种用于检测目标气体种类的气体检测器和方法，例如含有其的气体中的含氟物质，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。一个方面的气体检测器 采用对含氟物质敏感的含镍丝，当需要高温检测时，它们既可以作为传感元件又可作为热源。 气体检测器在一个方面使用可以垂直安装在支撑结构上的细长的气体传感器元件。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应这种气体传感器元件的热膨胀/收缩的结构灵活性。

    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME
    35.
    发明申请
    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME 审中-公开
    高K薄膜材料及其制造方法和使用方法

    公开(公告)号：WO2012177642A2

    公开(公告)日：2012-12-27

    申请号：PCT/US2012043153

    申请日：2012-06-19

    Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    Inventor： HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    IPC: H01L21/31 ,  H01L21/205

    CPC classification number: H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

    Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

    Abstract translation: 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与在形成钙钛矿材料的金属前体中的金属物质具有更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; SR（锡，钌）O3; 和Sr（Sn，Ti）O 3。

    THE USE OF GE AS ISOLATION LAYER ON SBXTEY OR GEXTEY ALLOY TO PREVENT INTERACTION OF TE FROM SBXTEY AND GEXTEY RESULTING IN HIGH TE CONTENT AND FILM CRYSTALLINITY
    37.
    发明申请
    THE USE OF GE AS ISOLATION LAYER ON SBXTEY OR GEXTEY ALLOY TO PREVENT INTERACTION OF TE FROM SBXTEY AND GEXTEY RESULTING IN HIGH TE CONTENT AND FILM CRYSTALLINITY 审中-公开
    GE作为隔离层在SBXTEY或GEXTEY合金上的使用，以防止来自SBXTEY和GEXTEY在高温含量和膜结晶中的相互作用

    公开(公告)号：WO2009152108A2

    公开(公告)日：2009-12-17

    申请号：PCT/US2009046655

    申请日：2009-06-08

    Applicant: ADVANCED TECH MATERIALS ,  ZHENG JUN-FEI ,  ROEDER JEFFREY F ,  CHEN PHILIP S H

    Inventor： ZHENG JUN-FEI ,  ROEDER JEFFREY F ,  CHEN PHILIP S H

    IPC: H01L27/115 ,  H01L21/20 ,  H01L21/8247

    CPC classification number: H01L45/1616 ,  C23C16/305 ,  H01L45/06 ,  H01L45/144

    Abstract: A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.

    Abstract translation: 一种含有锗，锑和碲的多层膜堆，其可被退火以形成均匀和平滑特征的GST产​​品材料，其中至少一个含锑层通过中间锗层与含碲层分离，并且 多层膜堆叠包括至少两个中间的锗层。 可以通过诸如化学气相沉积或原子层沉积的气相沉积技术形成多层膜堆叠。 可退火的多层膜堆叠可以形成在高纵横比通孔中，以形成相对于GST产品材料的化学计量和形态特征的优异特征的相变存储器件。

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