公开(公告)号：JPH07159501A

公开(公告)日：1995-06-23

申请号：JP33988293

申请日：1993-12-07

Applicant: FUTABA DENSHI KOGYO KK ,  AGENCY IND SCIENCE TECHN

Inventor： ITO SHIGEO ,  TONEGAWA TAKESHI ,  ITO JUNJI ,  KANAMARU MASATAKE ,  SUGIYAMA YOSHINOBU

IPC: G01R33/02 ,  G01R33/028 ,  G01R33/06 ,  H01J1/30 ,  H01J21/10 ,  H01L49/00

Abstract: PURPOSE:To provide a high-sensitivity, small three-dimensional magnetic sensor that is excellent in environmental resistance and easy to handle. CONSTITUTION:A two-split anode 4-, etc., and a gate 3-1 are formed on the respective portions of a substrate 1-1 and an emitter 2-1 is formed on an insulating layer. A two-split anode 4-3, etc., and a gate 3-2 are formed on the respective portions of a front substrate 1-2 and an emitter 2-2 is formed on an insulating layer. The direction and strength of three-dimensional magnetic flux supplied from the outside are determined from the amount of change of current flowing through each anode 4-1, 4-3, etc.

公开(公告)号：JPH06290701A

公开(公告)日：1994-10-18

申请号：JP7023691

申请日：1991-01-16

Applicant: AGENCY IND SCIENCE TECHN ,  FUTABA DENSHI KOGYO KK

Inventor： ITO JUNJI ,  KANAMARU MASATAKE ,  ITO SHIGEO ,  WATANABE TERUO ,  NAKADA HISASHI ,  NISHIMURA NORIO ,  MIYAMORI MAKOTO

IPC: H01J1/304 ,  H01J1/30 ,  H01J31/12

Abstract: PURPOSE:To prevent the deterioration of uniformity of emission due to the emission of a large amount of electrons from only a specific emitter in an electric field emitting element provided with a plurality of emitters. CONSTITUTION:An emitter unit 5 constituted of a plurality of emitters 4 arranged at predetermined intervals is mounted on an insulative substrate 2 apart from a common gate unit 7 and a common collector unit 8. A resistance layer 3 is interposed between a common emitter electrode 6 and the emitters 4, to function as series resistance between the emitters 4 and the emitter electrode 6. When electron emission from the emitter 4 is increased, it is possible to restrain an increase in electron flow in the emitter 4 since the resistance layer 3 functions as series resistance with respect to each emitter 4, resulting in a uniform emission characteristic of the emitter.

公开(公告)号：JPH0465048A

公开(公告)日：1992-03-02

申请号：JP17542190

申请日：1990-07-04

Applicant: AGENCY IND SCIENCE TECHN ,  FUTABA DENSHI KOGYO KK

Inventor： ITO JUNJI ,  KANAMARU MASATAKE ,  ITO SHIGEO ,  YAMAURA TATSUO

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PURPOSE:To make electron emitting part sharp by depositing a first metal which has high etching rate on an insulating substrate and depositing an electron emitting material which has smaller etching rate than the first metal on it. CONSTITUTION:An aluminum layer 2 (Al layer 2) and a tungsten layer 3 (W layer 3) are formed on the surface of an insulating substrate 1 and a photoresist 4 is applied to the upper surface of the W layer 3, exposed, developed, and patterned into a shape of an electron emitting device. The corner parts of the photoresist 4 is tilted by dry-etching the most upper layer, the W layer 3, by RIE (reactive ion etching) method using SF6. Further the lower Al layer 2 is so wet-etched as to hollowed out. Since Al is etched more easily than W, the lower Al layer 2 is etched deeper than the upper W layer 3. Consequently, end faces of the tip parts of an emitter from which electrons are emitted can have sharp structures.

公开(公告)号：JPH0334412A

公开(公告)日：1991-02-14

申请号：JP16853589

申请日：1989-06-30

Applicant: AGENCY IND SCIENCE TECHN ,  SHINETSU CHEMICAL CO

Inventor： ITO JUNJI ,  KUBOTA YOSHIHIRO ,  OKAZAKI SATOSHI

IPC: G03F1/22 ,  H01L21/027

Abstract: PURPOSE:To form a mask for X-ray lithography use having no defects like distortion, position deviation, imperfect bonding, etc., by making an material X-ray absorbing body and an X-ray transmitting body of the same silicon. CONSTITUTION:On a silicon substrate 1, an X-ray transmitting layer 2 is composed of silicon doped with boron of 0.5-2X10 atm/cc; thereon a silicon layer is formed by epitaxial method; by etching said layer, a pattern is formed and turned into an X-ray absorving body 3; the silicon substrate layer is eliminated by etching. Since all layers are formed of silicon in this manner, a mask for X-ray lithography for manufacturing an ultra LSI wherein mismatch on an interface and imperfect bonding are not present, local stress is small, and position deviation and distortion of pattern are little can be obtained.

公开(公告)号：JPH01300558A

公开(公告)日：1989-12-05

申请号：JP13113888

申请日：1988-05-27

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ITO JUNJI ,  OTORI KOICHIRO

IPC: H01J21/10 ,  H01J1/30 ,  H01J9/02 ,  H01L29/66

Abstract: PURPOSE:To shorten a distance between an emitter and a collector, to reduce a collector voltage, and place other existing solid state semiconductor device on a common substrate by sequentially laminating gate and collector electrodes on the periphery of an emitter electrode in the vertical direction. CONSTITUTION:A gate electrode 15, a collector electrode 17 are sequentially laminated in a vertical direction on a substrate 11 for physically and mechanically supporting an emitter electrode 13. The heightwise distance between the electrode 13 and 15 and between the electrodes 15 and 17 are set to predetermined values, and the predetermined distance therebetween is obtained by the thickness of an insulating film 15 formed between the substrate 11 for supporting the electrode 13 and the electrode 15 and the thickness of an insulating film formed between the electrodes 15 and 17. Thus, the distance between the emitter and the collector can be largely shortened, a collector applying voltage to be required is remarkably reduced, the matching to the other existing solid state element becomes satisfactory, and easily hybrid integrated on the same semiconductor substrate.

公开(公告)号：JPH11218568A

公开(公告)日：1999-08-10

申请号：JP2131998

申请日：1998-02-02

Applicant: AGENCY IND SCIENCE TECHN ,  YASKAWA ELECTRIC CORP

Inventor： ITO JUNJI ,  KAMIMURA KOJI

IPC: G01R33/028 ,  H01J1/30 ,  H01J21/10

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic sensor with high accuracy and a wide application range. SOLUTION: In the magnetic sensor provided with an electric field emission type emitter electrode 1 arranged to emit a linear electron beam into a package 8 evacuated inside, a gate electrode 2 controlling the number of electrons emitted from the emitter electrode 1, anode electrodes 3 provided dividedly at least in two via an insulator layer on the substrate 5 and collecting electrons of the electron beam and a bias electrode 4 biasing the electron beam and detecting the intensity of the external magnetic field base on the variation of electron number coming in the anode electrode 3 due to the external magnetic field of the measuring object, a mask 9 limiting the linear electron beam shape is provided between the emitter electrode 1 and the anode electrodes 3. By this, an electron beam with always uniform arm length and beam width is obtained and the accuracy is improved.

公开(公告)号：JPH09259744A

公开(公告)日：1997-10-03

申请号：JP6762996

申请日：1996-03-25

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KANAMARU MASATAKE ,  ITO JUNJI

IPC: H01J1/304 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To provide an element structure which is proper for stabilizing the emission current of a cold electron emission element, and is simple. SOLUTION: An emitter 13 having a tip portion P0 is made by processing a p-type semiconductor substrate 31, and an n-type source region 32 is provided on a p-type semiconductor substrate surface positioned apart from the emitter 13 in a transverse direction. An electrode layer 34 having an opening 15 surrounding the tip portion P0 of the emitter 13 is provided via an insulating layer 12, and the electrode layer 34 is extended so as to reach above the n-type source region 32. A voltage Vg (Vc) is applied to the electrode layer 34, a cold electron extracting electric field is applied to the tip portion P0 of the emitter 13, and simultaneously an inversion layer 36 is induced on the surface of the emitter 13 and on the surface of the p-type semiconductor substrate 31.

公开(公告)号：JPH0963462A

公开(公告)日：1997-03-07

申请号：JP21581495

申请日：1995-08-24

Applicant: SANYO ELECTRIC CO ,  AGENCY IND SCIENCE TECHN

Inventor： YAMAOKA YOSHIKAZU ,  ITO JUNJI ,  KANAMARU MASATAKE

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J3/18

Abstract: PROBLEM TO BE SOLVED: To obtain an electric field emission type electron gun element and the manufacture of it capable of accurately focusing an electron beam, and facilitating high integration, while assuring an emission electric current value, in an electric field emission type electron gun element. SOLUTION: A gate electrode 4 and a focus lens electrode 6 are formed into separate layers, and also the openings of the respective electrodes are arranged into height nealy the same as that of the tip of an emitter 2. An electric field, formed of the focus lens electrode 6, is shaded by the electrode 4 to be inhibited to weaken an electric field formed on the emitter 2 by the electrode 4, thereby ensuring an emission electric current. Also, the opening of the focus lens electrode 6 can be formed into a layer separate from the gate electrode 4, thereby completely surrounding the opening of the gate electrode 4. Consequently, the spot shape of an electron beam can be accurately focused dotlikely, and the electrodes 4 and 6 of this electron gun can be formed in self-align with the emitter 2.

公开(公告)号：JPH08138531A

公开(公告)日：1996-05-31

申请号：JP9428695

申请日：1995-03-27

Applicant: TOPPAN PRINTING CO LTD ,  AGENCY IND SCIENCE TECHN

Inventor： GAMO SHUSUKE ,  KANAMARU MASATAKE ,  ITO JUNJI

IPC: H01J9/02 ,  G09F9/313 ,  H01J1/30 ,  H01J1/304 ,  H01J29/46

Abstract: PURPOSE: To provide an electron emission element having an emitter electrode inclined for a gate electrode with high repeatability and positional accuracy, while the gate electrode being laid to self-match the emitter electrode at an extremely small gap without any restriction by the design rule of the photo-lithograph method. CONSTITUTION: A substrate 1, an insulation layer 2 and a gate electrode 3 are stacked in order, and the electrode 3 and the layer 2 are provided with an aperture A of such depth as reaching the substrate 1. Also, an emitter electrode 4 is stacked on the substrate 1 within the aperture A, so as not to come in contact with the gate electrode 3. In addition, a recess 1a of inverted conical type is formed on the substrate 1 and, then, the emitter electrode 4 is formed along the slope of the recess 1a. In this case, the peripheral section 4a of the electrode 4 is projected from the upper end of the substrate recess 1a.

公开(公告)号：JPH07262907A

公开(公告)日：1995-10-13

申请号：JP7546794

申请日：1994-03-23

Applicant: AGENCY IND SCIENCE TECHN ,  TOPPAN PRINTING CO LTD

Inventor： ITO JUNJI ,  KANAMARU MASATAKE ,  ISHIZAKI MAMORU

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PURPOSE:To reduce the operating voltage and improve the distribution ratio in a cold electron emission element. CONSTITUTION:A recessed part 15 is provided under an opening 51 opened at a gate 50, and an emitter 30 composed of a conductive thin film 40 is provided in the recessed part. The conductive thin film 40 is diagonally inclined so as to approach to the gate 50 toward the end close to the gate 50 from the end far therefrom. An acute dot-shaped protrusion Po is provided at the end oriented to the gate 50 in the conductive thin film 40 so as to be the intensive part of an electric field.