公开(公告)号：US20240006176A1

公开(公告)日：2024-01-04

申请号：US18214656

申请日：2023-06-27

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Charles Dezelah ,  Rami Khazaka ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  C30B29/52 ,  C30B25/02

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02579

Abstract: Methods and systems for forming a p-type doped silicon germanium layer. The p-type doped silicon germanium layer can include silicon, germanium, gallium, and, in at least some cases, indium.

公开(公告)号：US20230159865A1

公开(公告)日：2023-05-25

申请号：US17991044

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Fei Wang ,  Robin Scott ,  Woo Jung Shin ,  Amin Azimi

IPC: C11D7/32 ,  C11D7/04 ,  C11D7/34 ,  C11D11/00

CPC classification number: C11D7/3209 ,  C11D7/04 ,  C11D7/34 ,  C11D11/0041

Abstract: A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.

公开(公告)号：US20230098575A1

公开(公告)日：2023-03-30

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220084817A1

公开(公告)日：2022-03-17

申请号：US17472981

申请日：2021-09-13

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20210371978A1

公开(公告)日：2021-12-02

申请号：US17329829

申请日：2021-05-25

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Hannu A. Huotari ,  Paul Ma ,  Vamsi Paruchuri

IPC: C23C16/455 ,  C23C16/34

Abstract: Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

公开(公告)号：US20210301391A1

公开(公告)日：2021-09-30

申请号：US17216260

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C16/56 ,  C23C16/02 ,  C23C16/455 ,  C23C28/00

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US20250112057A1

公开(公告)日：2025-04-03

申请号：US18898455

申请日：2024-09-26

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Daniele Piumi

IPC: H01L21/3213 ,  C09K13/08 ,  H01L21/67

Abstract: The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.

公开(公告)号：US20250109492A1

公开(公告)日：2025-04-03

申请号：US18900427

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Michael Eugene Givens ,  Giuseppe Alessio Verni

IPC: C23C16/30 ,  C23C16/44

Abstract: A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-free precursor comprising a metal to the reaction chamber to contact the surface, b) providing an oxygen-free, sulfur-containing reactant to the reaction chamber to contact the surface, c) purging the reaction chamber and repeating operations a), b) or c) or any combination thereof until the threshold voltage shifting layer of a predetermined thickness is deposited on the surface.