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公开(公告)号：US20250140555A1
公开(公告)日：2025-05-01
申请号：US18930777
申请日：2024-10-29
Applicant: ASM IP Holding B.V.
Inventor： Vivek Koladi Mootheri , Jerome Innocent , David Ezequiel Guzmán Caballero , Andrea Illiberi , Hameeda Jagalur Basheer , Aditya Chauhan , Leo Lukose , Charles Dezelah
IPC: H01L21/02 , C23C16/40 , C23C16/455
Abstract: Methods of forming magnesium indium zinc oxide (MIZO) layers by vapor deposition are provided. In some embodiments cyclical deposition processes for forming MIZO layers comprise a deposition cycle including alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase indium precursor, a vapor phase zinc precursor, a vapor phase magnesium precursor, and an oxygen reactant.
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2.发明申请公开(公告)号：US20250079156A1
公开(公告)日：2025-03-06
申请号：US18814949
申请日：2024-08-26
Applicant: ASM IP Holding B.V.
Inventor： Giuseppe Alessio Verni , Patricio Romero , Charles Dezelah , Suvidyakumar Vinod Homkar , Petro Deminskyi , Balaji Kannan , Michael Eugene Givens , Mikko Leander Nisula
Abstract: The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.
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公开(公告)号：US12234548B2
公开(公告)日：2025-02-25
申请号：US18103594
申请日：2023-01-31
Applicant: ASM IP Holding B.V.
Inventor： Charles Dezelah , Andrea Illiberi , Varun Sharma , Bart Vermeulen , Michael Givens
IPC: C23C16/30 , C23C16/455 , C23C16/56
Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.
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公开(公告)号：US12221357B2
公开(公告)日：2025-02-11
申请号：US17238424
申请日：2021-04-23
Applicant: ASM IP Holding B.V.
Inventor： Charles Dezelah , Eric Shero
Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.
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5.发明申请公开(公告)号：US20250046609A1
公开(公告)日：2025-02-06
申请号：US18792784
申请日：2024-08-02
Applicant: ASM IP Holding B.V.
Inventor： Fatemeh Davodi , Paul Chatelain , Charles Dezelah
IPC: H01L21/02 , C23C16/40 , C23C16/455 , C23C16/503 , G03F7/20 , H01L21/033
Abstract: Methods and related systems and structures for reducing EUV dose requirements during lithography steps. Presently disclosed methods can comprise forming a dose reducing layer that comprises a doped semiconductor. The doped semiconductor can comprise at least one of an elemental semiconductor and a compound semiconductor.
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Patent Agency Ranking
公开(公告)号：US20250034701A1
公开(公告)日：2025-01-30
申请号：US18782198
申请日：2024-07-24
Applicant: ASM IP Holding B.V.
Inventor： Bo Yin , Fu Tang , Andrea Illiberi , Charles Dezelah
IPC: C23C16/40 , C23C16/455 , H01L21/02
Abstract: Method, system and apparatus for forming one or more metal oxide layers on a substrate is disclosed. An example method comprises a) providing a substrate in a reaction chamber, b) flowing a first precursor comprising zinc or gallium or a combination thereof and an oxygen species into the chamber to deposit a first oxide layer on a top surface of the substrate, c) flowing a second precursor into the chamber to deposit a second oxide layer on the first oxide layer wherein the second precursor comprises aluminum having at least one R ligand and at least one L ligand, wherein the R ligand is an alkyl ligand and wherein the R ligand and the L ligand are different and repeating steps b) or c) or a combination thereof until a desired thickness of the first oxide layer or the second oxide layer, or a combination thereof is achieved.
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公开(公告)号：US20250033990A1
公开(公告)日：2025-01-30
申请号：US18912849
申请日：2024-10-11
Applicant: ASM IP Holding B.V.
Inventor： Charles Dezelah , Eric James Shero
Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.
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8.发明授权公开(公告)号：US12087586B2
公开(公告)日：2024-09-10
申请号：US17227621
申请日：2021-04-12
Applicant: ASM IP Holding B.V.
Inventor： Qi Xie , Eric James Shero , Charles Dezelah , Giuseppe Alessio Verni , Petri Raisanen
IPC: H01L21/28 , C23C16/34 , C23C16/455 , C23C16/52 , H01L29/49
CPC classification number: H01L21/28088 , C23C16/34 , C23C16/45544 , C23C16/52 , H01L29/4966
Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.
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公开(公告)号：US11996286B2
公开(公告)日：2024-05-28
申请号：US17457858
申请日：2021-12-06
Applicant: ASM IP HOLDING B.V.
Inventor： Charles Dezelah , Hideaki Fukuda , Viljami Pore
IPC: C23C16/34 , C23C16/455 , C23C16/52 , H01J37/32 , H01L21/02
CPC classification number: H01L21/02274 , C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45553 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01L21/0217 , H01L21/02211 , H01L21/0228 , H01J2237/332
Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.
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公开(公告)号：US20240133032A1
公开(公告)日：2024-04-25
申请号：US18541166
申请日：2023-12-15
Applicant: ASM IP Holding B.V.
Inventor： Charles Dezelah , Jan Willem Maes , Elina Färm , Saima Ali , Antti Niskanen
IPC: C23C16/455 , C23C16/18 , C23C16/54
CPC classification number: C23C16/45553 , C23C16/18 , C23C16/45527 , C23C16/45544 , C23C16/45559 , C23C16/54
Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.
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