公开(公告)号：US20140295673A1

公开(公告)日：2014-10-02

申请号：US14300986

申请日：2014-06-10

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US08846550B1

公开(公告)日：2014-09-30

申请号：US13830322

申请日：2013-03-14

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US20130129577A1

公开(公告)日：2013-05-23

申请号：US13677151

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J8/00

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

公开(公告)号：US20130126515A1

公开(公告)日：2013-05-23

申请号：US13677133

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Michael Halpin ,  Jerry Winkler

IPC: H05B1/02 ,  H05B3/68

CPC classification number: H05B1/0233 ,  H01L21/67115 ,  H05B3/68

Abstract: A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.

Abstract translation: 一种反应室，包括位于所述反应室内的基板支撑构件，所述反应室具有第一区域和第二区域，所述反应室设置在所述第二室内并且可与所述基板支撑构件一起移动，并且其中所述屏蔽件至少与 衬底支撑构件的底表面。

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

公开(公告)号：US20240141486A1

公开(公告)日：2024-05-02

申请号：US18410370

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Todd Robert Dunn ,  Michael Eugene Givens ,  Jereld Lee Winkler ,  Paul Ma ,  Eric Shero

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45512 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US20230054779A1

公开(公告)日：2023-02-23

申请号：US17887646

申请日：2022-08-15

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Abhishek Mangoli ,  Harihara Krishnan Krishnamoorthy ,  Daniel Maurice ,  Julio Cesar Diaz ,  Massood Mostaghimi

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/66

Abstract: A reactor system with stuck lift pin detection. The system includes a reaction chamber, a susceptor for supporting wafers in an interior space of the reaction chamber, and an elevator for raising and lowering the susceptor in the interior space. Further, the system includes a lift pin supported by and extending vertically through the susceptor to travel between an up and a down position with movements of the susceptor by the elevator, and a landing pad is provided in the system for receiving a base of the lift pin when the lift pin is in the down position. Significantly, the system also includes a sensor assembly with a sensor positioned at least partially within the interior space of the reaction chamber. An output signal of the sensor is indicative of whether the lift pin is sticking or seizing during travel through the susceptor.

公开(公告)号：US20220403516A1

公开(公告)日：2022-12-22

申请号：US17842007

申请日：2022-06-16

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Eric Shero ,  Todd Dunn ,  Jonathan Bakke ,  Jereld Winkler ,  Xingye Wang ,  Eric Jen Cheng Liu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/56

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20210331935A1

公开(公告)日：2021-10-28

申请号：US17238424

申请日：2021-04-23

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric Shero

IPC: C01G31/04 ,  C23C16/08 ,  C23C16/455 ,  C23C14/06 ,  C23C14/54 ,  C23C16/52

Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.