公开(公告)号：US20240175129A1

公开(公告)日：2024-05-30

申请号：US18518042

申请日：2023-11-22

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Jerome Innocent ,  Charles Dezelah ,  Michael Eugene Givens

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/45527 ,  C23C16/22 ,  C23C16/45553

Abstract: Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

公开(公告)号：US20230243032A1

公开(公告)日：2023-08-03

申请号：US18103594

申请日：2023-01-31

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Andrea Illiberi ,  Varun Sharma ,  Bart Vermeulen ,  Michael Givens

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/30 ,  C23C16/45553 ,  C23C16/56

Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

公开(公告)号：US12234548B2

公开(公告)日：2025-02-25

申请号：US18103594

申请日：2023-01-31

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Andrea Illiberi ,  Varun Sharma ,  Bart Vermeulen ,  Michael Givens

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56

Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.