公开(公告)号：US20250149325A1

公开(公告)日：2025-05-08

申请号：US19014870

申请日：2025-01-09

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20250092515A1

公开(公告)日：2025-03-20

申请号：US18967466

申请日：2024-12-03

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vencent Vandalon

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20250037988A1

公开(公告)日：2025-01-30

申请号：US18914437

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20240201596A1

公开(公告)日：2024-06-20

申请号：US18528314

申请日：2023-12-04

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Yoann Tomczak ,  Charles Dezelah ,  Ivan Zyulkov ,  David Kurt De Roest ,  Michael Givens ,  Daniele Piumi

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0045 ,  G03F7/165

Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.

公开(公告)号：US20230386934A1

公开(公告)日：2023-11-30

申请号：US18322286

申请日：2023-05-23

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  Marko Tuominen ,  Vincent Vandalon ,  Eva E. Tois ,  Viraj Madhiwala ,  YongGyu Han ,  Daniele Chiappe ,  Michael Givens ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: H01L21/8238

CPC classification number: H01L21/823807

Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.

公开(公告)号：US20230377877A1

公开(公告)日：2023-11-23

申请号：US18319933

申请日：2023-05-18

Applicant: ASM IP Holding, B.V.

Inventor： Alessandra Leonhardt ,  Matthew Surman ,  Perttu Sippola ,  Ranjith Karuparambil Ramachandran ,  Charles Dezelah ,  Michael Givens ,  Andrea Illiberi ,  Tatiana Ivanova ,  Leo Lukose ,  Lorenzo Bottiglieri ,  Suvidyakumar Vinod Homkar ,  Vivek Koladi Mootheri

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02318 ,  C23C16/405 ,  C23C16/56 ,  C23C16/45527 ,  C23C16/45553 ,  H01L29/0673

Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.

公开(公告)号：US20230349069A1

公开(公告)日：2023-11-02

申请号：US18307447

申请日：2023-04-26

Applicant: ASM IP Holding, B.V.

Inventor： Wonjong Kim ,  Rami Khazaka ,  Michael Givens ,  Charles Dezelah

IPC: C30B25/16 ,  C30B29/52 ,  C30B31/08 ,  C30B33/08 ,  C30B31/18

CPC classification number: C30B25/165 ,  C30B29/52 ,  C30B31/08 ,  C30B31/18 ,  C30B33/08

Abstract: Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

公开(公告)号：US11643720B2

公开(公告)日：2023-05-09

申请号：US17216249

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  C23C16/455 ,  B01J31/12

CPC classification number: C23C16/401 ,  B01J31/122 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20230140812A1

公开(公告)日：2023-05-04

申请号：US18050142

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Anirudhan Chandrasekaran ,  Andrea Illiberi ,  Shaoren Deng ,  Charles Dezelah ,  Vincent Vandalon ,  YongGyu Han ,  Michael Givens

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02

Abstract: The present disclosure relates to methods and apparatuses for selectively depositing silicon and oxygen-comprising material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising providing a substrate in a reaction chamber; providing a metal or metalloid catalyst to the reaction chamber in a vapor phase; providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form silicon and oxygen-comprising material on the first surface. The disclosure further relates to vapor deposition assemblies.

公开(公告)号：US20230071197A1

公开(公告)日：2023-03-09

申请号：US17899928

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Charles Dezelah ,  Michael Givens

IPC: G03F1/56 ,  G03F7/16 ,  G03F7/004

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes an element having a relatively high extreme ultraviolet (EUV) sensitivity on a mass basis while having a relatively low EUV sensitivity on a mole basis.