公开(公告)号：WO2017089105A1

公开(公告)日：2017-06-01

申请号：PCT/EP2016/076835

申请日：2016-11-07

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank

IPC: G03F7/20

CPC classification number: G03F7/70683 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7026

Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.

Abstract translation: 公开了包括用于测量覆盖和聚焦的组合目标的基板。 该目标包括：包含第一周期性结构的第一层; 以及包括覆盖第一周期性结构的第二周期性结构的第二层。 目标具有结构不对称性，其包括由第一周期性结构和第二周期性结构之间的无意失配产生的结构不对称分量，由第一周期性结构和第二周期性结构之间的有意位置偏移和焦点依赖性产生的结构不对称分量 结构不对称部件，其取决于在所述组合目标在所述衬底上的曝光期间的聚焦设置。 还公开了用于形成这样的靶的方法以及相关的光刻和测量装置。

公开(公告)号：WO2015131969A1

公开(公告)日：2015-09-11

申请号：PCT/EP2014/078164

申请日：2014-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： SCHMITT-WEAVER, Emil, Peter ,  HENKE, Wolfgang ,  PRENTICE, Christopher ,  STAALS, Frank ,  TEL, Wim, Tjibbo

IPC: G03F9/00

CPC classification number: G03F7/70641 ,  G03F7/70725 ,  G03F9/7019 ,  G03F9/7026 ,  G03F9/7092

Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor (LS) and an associated processor for obtaining a height map (h(x,y)) of the substrate surface prior to applying said pattern. A controller uses the height map to control focusing of the projection system when applying said pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which said measurement signals are used to control focus, between the first and second regions. For example, algorithms (A(x,y)) for calculation of height values from optical measurement signals (S(x,y)) can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in focusing.

Abstract translation: 光刻设备使用光学投影系统将图案施加到基板上。 该装置包括光学水平传感器（LS）和相关联的处理器，用于在施加所述图案之前获得衬底表面的高度图（h（x，y））。 当应用所述图案时，控制器使用高度图来控制投影系统的聚焦。 处理器还被布置为使用与先前施加到衬底上的处理相关的信息来限定衬底的至少第一和第二区域，并且改变在第一和第二区域之间使用所述测量信号来控制焦点的方式。 例如，用于计算光学测量信号（S（x，y））的高度值的算法（A（x，y））可以根据已知结构和/或材料的差异而变化。 可以从高度图的计算和/或聚焦中的使用中选择性地排除来自某些区域的测量。

公开(公告)号：EP3492984A1

公开(公告)日：2019-06-05

申请号：EP17205144.3

申请日：2017-12-04

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  BROUWER, Eric Jos Anton ,  LUIJTEN, Carlo Cornelis Maria

IPC: G03F7/20

Abstract: A focus metrology target includes one or more periodic arrays of features (TH, TV, T). A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features comprises a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features (806, 906, 1106, 1108, 1206, 1208, 1210, 1406, 1408, 1506, 1508, 1510). A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features (1420, 1520).

公开(公告)号：EP3376290A1

公开(公告)日：2018-09-19

申请号：EP17160879.7

申请日：2017-03-14

Applicant: ASML Netherlands B.V.

Inventor： VAN GORP, Simon Hendrik Celine ,  THUIJS, Koen ,  LUIJTEN, Carlo Cornelis Maria ,  STAALS, Frank

IPC: G03F9/00

CPC classification number: G03F1/44 ,  G03F7/70641 ,  G03F7/70683 ,  G03F9/7026 ,  G03F9/7046

Abstract: A method of measuring the topography of a substrate having device features thereon, the method comprising:
providing a coating on the substrate above the device features, the coating being substantially opaque to radiation of a predetermined wavelength;
applying a radiation-sensitive layer on the coating;
exposing the radiation-sensitive layer using a lithographic apparatus to define a plurality of focus-sensitive targets; and
measuring a parameter of the focus-sensitive targets using a radiation beam having the predetermined wavelength to determine information describing the topography of the substrate.

公开(公告)号：EP3764164A1

公开(公告)日：2021-01-13

申请号：EP19185785.3

申请日：2019-07-11

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  VAN GORP, Simon Hendrik Celine

IPC: G03F7/20

Abstract: Disclosed is a method for controlling a lithographic apparatus, and associated apparatuses. The method comprises obtaining first metrology data related to the substrate; and optimizing control of the lithographic apparatus in at least two different control regimes during the lithographic process based on said metrology data by optimizing a common merit function for each control regime.

公开(公告)号：EP3688529A1

公开(公告)日：2020-08-05

申请号：EP18759092.2

申请日：2018-08-22

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim Tjibbo ,  MASLOW, Mark John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon Hendrik Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

公开(公告)号：EP3657256A1

公开(公告)日：2020-05-27

申请号：EP18207326.2

申请日：2018-11-20

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank

IPC: G03F7/20 ,  G03F1/44

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus. The method comprises using the lithographic apparatus to print at least one focus metrology pattern on a substrate, the printed focus metrology pattern comprising at least a first periodic array of features, and using inspection radiation to measure asymmetry between opposite portions of a diffraction spectrum for the first periodic array in the printed focus metrology pattern. A measurement of focus performance is derived based at least in part on the asymmetry measured. The first periodic array comprises a repeating arrangement of a space region having no features and a pattern region having at least one first feature comprising sub-features projecting from a main body and at least one second feature; and wherein the first feature and second feature are in sufficient proximity to be effectively detected as a single feature during measurement. A patterning device comprising said first periodic array is also disclosed.

公开(公告)号：EP4235305A1

公开(公告)日：2023-08-30

申请号：EP23171216.7

申请日：2018-08-22

Applicant: ASML Netherlands B.V.

Inventor： ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  MASLOW, Mark, John ,  SLACHTER, Abraham ,  STAALS, Frank ,  TEL, Wim, Tjibbo ,  VAN GORP, Simon, Hendrik, Celine ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：EP2142961B1

公开(公告)日：2019-06-05

申请号：EP08741685.5

申请日：2008-04-29

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  LOF, Joeri ,  LOOPSTRA, Erik, Roelof ,  TEL, Wim, Tjibbo ,  MOEST, Bearrach

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：EP3290911A1

公开(公告)日：2018-03-07

申请号：EP16187040.7

申请日：2016-09-02

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  STAALS, Frank ,  HINNEN, Paul, Christiaan

IPC: G01N21/956 ,  G03F7/20

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F7/705 ,  G03F7/70633

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

Abstract translation: 一种方法，该方法包括在基板已经根据由一个或多个处理设备通过去除基板的特性的值而被处理之后，确定一个或多个处理设备对基板的特性作出的贡献， 针对该特性的光刻设备以及一个或多个预光刻处理设备对该特性的贡献。