公开(公告)号：US11126093B2

公开(公告)日：2021-09-21

申请号：US16099452

申请日：2017-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Reiner Maria Jungblut ,  Leon Paul Van Dijk ,  Willem Seine Christian Roelofs ,  Wim Tjibbo Tel ,  Stefan Hunsche ,  Maurits Van Der Schaar

IPC: G03F7/20 ,  G03F1/36 ,  G03F9/00

Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

公开(公告)号：US20210216017A1

公开(公告)日：2021-07-15

申请号：US17214456

申请日：2021-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans VAN DER LAAN ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US11022900B2

公开(公告)日：2021-06-01

申请号：US16931002

申请日：2020-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US10859926B2

公开(公告)日：2020-12-08

申请号：US15580515

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Rafael Aldana Laso ,  Vivek Kumar Jain ,  Marinus Jochemsen ,  Xinjian Zhou

IPC: G03F7/20 ,  G06T3/00 ,  G06T7/00

Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

公开(公告)号：US10761432B2

公开(公告)日：2020-09-01

申请号：US15961377

申请日：2018-04-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US10607334B2

公开(公告)日：2020-03-31

申请号：US15533614

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Markus Gerardus Martinus Maria Van Kraaij ,  Maxim Pisarenco ,  Adrianus Cornelis Matheus Koopman ,  Stefan Hunsche ,  Willem Marie Julia Marcel Coene

IPC: G06T7/00 ,  G03F7/20

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

公开(公告)号：US08832610B2

公开(公告)日：2014-09-09

申请号：US13854872

申请日：2013-04-01

Applicant: ASML Netherlands B.V.

Inventor： Jun Ye ,  Jiangwei Li ,  Stefan Hunsche

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36

CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36

Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.

Abstract translation: 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局，使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型，以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差，其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值，并在应用进一步的光学邻近校正之前应用于设计布局。