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公开(公告)号：US11461532B2
公开(公告)日：2022-10-04
申请号：US17097106
申请日：2020-11-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC: G06F30/30 , G03F1/36 , G03F7/20 , G06F30/398 , G06F30/33 , G03F1/70 , G06F30/20 , G06F30/39 , G06F30/337 , G06F119/18 , G03F1/76 , G03F1/50 , G06F111/10
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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公开(公告)号：US10592633B2
公开(公告)日：2020-03-17
申请号：US15959123
申请日：2018-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi Chen , Jun Ye , Yu Cao
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
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公开(公告)号：US10169522B2
公开(公告)日：2019-01-01
申请号：US14543326
申请日：2014-11-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu Cao , Hanying Feng , Jun Ye
Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.
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公开(公告)号：US20180239861A1
公开(公告)日：2018-08-23
申请号：US15959123
申请日：2018-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi Chen , Jun Ye , Yu Cao
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70083 , G03F7/70125 , G03F7/70441 , G03F7/705 , G06F17/5068
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
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公开(公告)号：US10007192B2
公开(公告)日：2018-06-26
申请号：US14507553
申请日：2014-10-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , James Patrick Koonmen
IPC: G06F17/50 , G03F7/20 , G05B13/04 , G03F9/00 , B29C64/386
CPC classification number: G03F7/70525 , B29C64/386 , G03F9/7096 , G05B13/04
Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.
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Patent Agency Ranking
公开(公告)号：US09953127B2
公开(公告)日：2018-04-24
申请号：US14822661
申请日：2015-08-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi Chen , Jun Ye , Yu Cao
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70083 , G03F7/70125 , G03F7/70441 , G03F7/705 , G06F17/5068
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
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公开(公告)号：US09779186B2
公开(公告)日：2017-10-03
申请号：US14282754
申请日：2014-05-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , Hanying Feng
CPC classification number: G06F17/5009 , G03F1/144 , G03F1/36
Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.
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公开(公告)号：US08893058B2
公开(公告)日：2014-11-18
申请号：US13893534
申请日：2013-05-14
Applicant: ASML Netherlands B.V.
Inventor： Yu Cao , Hanying Feng , Jun Ye
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F1/70 , G03F7/70483 , G03F7/705 , G03F7/70525 , G03F7/70991 , G06F17/5068
Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.
Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。
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公开(公告)号：US10569469B2
公开(公告)日：2020-02-25
申请号：US14525704
申请日：2014-10-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
IPC: G06F17/50 , G03F7/00 , B29C64/386 , G03F7/20
Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
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公开(公告)号：US10198549B2
公开(公告)日：2019-02-05
申请号：US15174732
申请日：2016-06-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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