公开(公告)号：US20220100098A1

公开(公告)日：2022-03-31

申请号：US17425355

申请日：2020-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Mark John MASLOW ,  Koen THUIJS ,  Peter David ENGBLOM ,  Ralph Timotheus HUIJGEN ,  Daan Maurits SLOTBOOM ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

公开(公告)号：US20210356874A1

公开(公告)日：2021-11-18

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20210018850A1

公开(公告)日：2021-01-21

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20200004164A1

公开(公告)日：2020-01-02

申请号：US16480706

申请日：2018-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Wim Tjibbo TEL ,  Frank STAALS ,  Leon Martin LEVASIER

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

公开(公告)号：US20190310553A1

公开(公告)日：2019-10-10

申请号：US16315026

申请日：2017-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus JOCHEMSEN ,  Stefan HUNSCHE ,  Wim Tjibbo TEL

IPC: G03F7/20

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

公开(公告)号：US20190196334A1

公开(公告)日：2019-06-27

申请号：US16327363

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Frank STAALS ,  Paul Christiaan HINNEN

IPC: G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US20190086810A1

公开(公告)日：2019-03-21

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Mark John MASLOW ,  Roy ANUNCIADO ,  Marinus JOCHEMSEN ,  Hugo Augustinus Joseph CRAMER ,  Thomas THEEUWES ,  Paul Christiaan HINNEN

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US20180011398A1

公开(公告)日：2018-01-11

申请号：US15546583

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Frank STAALS ,  Christopher PRENTICE ,  Laurent Michel Marcel DEPRE ,  Johannes Marcus Maria BELTMAN ,  Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Everhardus Cornelis MOS

IPC: G03F1/70 ,  G03F1/22 ,  G06T7/00

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

公开(公告)号：US20160370711A1

公开(公告)日：2016-12-22

申请号：US15121340

申请日：2014-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Wolfgang HENKE ,  Christopher PRENTICE ,  Frank STAALS ,  Wim Tjibbo TEL

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70725 ,  G03F9/7019 ,  G03F9/7026 ,  G03F9/7092

Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.

Abstract translation: 光刻设备使用光学投影系统将图案施加到基板上。 该装置包括光学水平传感器和相关联的处理器，用于在施加图案之前获得衬底表面的高度图。 当应用图案时，控制器使用高度图来控制相对于投影系统的聚焦。 处理器还被布置成使用与先前施加到衬底上的处理相关的信息来限定衬底的至少第一和第二区域，并且改变在第一和第二区域之间使用测量信号来控制聚焦的方式 。 例如，可以根据已知结构和/或材料的差异来改变从光学测量信号计算高度值的算法。 可以从高度图的计算和/或聚焦中的使用中选择性地排除来自某些区域的测量。

公开(公告)号：US20240142959A1

公开(公告)日：2024-05-02

申请号：US18407323

申请日：2024-01-08

Applicant: ASML Netherlands B.V.

Inventor： Jill Elizabeth FREEMAN ,  Vivek Kumar JAIN ,  Kuo-Feng PAO ,  Wim Tjibbo TEL

IPC: G05B19/418 ,  G03F1/44 ,  G03F7/00

CPC classification number: G05B19/41875 ,  G03F1/44 ,  G03F7/70508 ,  G05B19/41885 ,  G05B2219/45031

Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.