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    MARK POSITION DETERMINATION METHOD
    1.
    发明申请
    MARK POSITION DETERMINATION METHOD 审中-公开

    公开(公告)号：US20190064680A1

    公开(公告)日：2019-02-28

    申请号：US16083076

    申请日：2017-02-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Emil Peter SCHMITT-WEAVER ,  Amir Bin ISMAIL ,  Kaustuve BHATTACHARYYA ,  Paul DERWIN

    IPC: G03F7/20

    Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

    LITHOGRAPHY SYSTEM AND A MACHINE LEARNING CONTROLLER FOR SUCH A LITHOGRAPHY SYSTEM
    3.
    发明申请
    LITHOGRAPHY SYSTEM AND A MACHINE LEARNING CONTROLLER FOR SUCH A LITHOGRAPHY SYSTEM 有权
    LITHOGRAPHY系统和一台机器学习控制器

    公开(公告)号：US20160170311A1

    公开(公告)日：2016-06-16

    申请号：US14905611

    申请日：2014-08-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Emil Peter SCHMITT-WEAVER ,  Wolfgang HENKE ,  Thomas Leo HOOGENBOOM ,  Pavel IZIKSON ,  Paul Frank LUEHRMANN ,  Daan Maurits SLOTBOOM ,  Jens STAECKER ,  Alexander YPMA

    IPC: G03F7/20

    CPC classification number: G03F7/70516 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633

    Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

    Abstract translation: 一种光刻系统，被配置为将图案应用于基底，所述系统包括被配置为根据图案暴露基底层的光刻设备，以及机器学习控制器，被配置为控制光刻系统以优化图案的特性， 机器学习控制器被配置为基于由测量单元测量的属性来进行训练，所述测量单元被配置成测量所述层中的暴露图案的性质和/或与将图案暴露于衬底相关联的属性，并且修正光刻系统 通过调整选自以下的一个或多个漂移：光刻设备，被配置为将该层施加在用于光刻曝光的基板上的轨道单元和/或控制单元，被配置为控制轨道单元，光刻设备之间的自动衬底流动， 和计量单位。

    MODELING METHOD FOR COMPUTATIONAL FINGERPRINTS
    6.
    发明申请
    MODELING METHOD FOR COMPUTATIONAL FINGERPRINTS 有权

    公开(公告)号：US20220291590A1

    公开(公告)日：2022-09-15

    申请号：US17634309

    申请日：2020-07-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jing SU ,  Yana CHENG ,  Zchenxi LIN ,  Yi ZOU ,  Ddavit HARUTYUNYAN ,  Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Cornelis Johannes Henricus LAMBREGTS ,  Hadi YAGUBIZADE

    IPC: G03F7/20

    Abstract: A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.

    METHOD FOR MONITORING LITHOGRAPHIC APPARATUS
    7.
    发明申请
    METHOD FOR MONITORING LITHOGRAPHIC APPARATUS 有权

    公开(公告)号：US20220026809A1

    公开(公告)日：2022-01-27

    申请号：US17291513

    申请日：2019-10-15

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Martin KERS

    IPC: G03F7/20 ,  G05B13/04

    Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

    Calibration Method for a Lithographic Apparatus
    8.
    发明申请
    Calibration Method for a Lithographic Apparatus 审中-公开

    公开(公告)号：US20200218170A1

    公开(公告)日：2020-07-09

    申请号：US16822870

    申请日：2020-03-18

    Applicant: ASML Netherlands B.V.

    Inventor： Emil Peter SCHMITT-WEAVER ,  Jens STÄCKER ,  Koenraad Remi André Maria SCHREEL ,  Roy WERKMAN

    IPC: G03F9/00 ,  G03F7/20

    Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

    METHOD AND APPARATUS FOR LITHOGRAPHIC IMAGING
    9.
    发明申请
    METHOD AND APPARATUS FOR LITHOGRAPHIC IMAGING 有权

    公开(公告)号：US20250036033A1

    公开(公告)日：2025-01-30

    申请号：US18716383

    申请日：2022-11-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Dong Young CHEON ,  Adriaan Johan VAN LEEST

    IPC: G03F9/00 ,  G03F7/00

    Abstract: A method of compensating for focus deviations on a substrate having a plurality of layers present thereon, the method includes generating a focus prediction map for the substrate. In one approach, the focus prediction map is generated by obtaining key performance indicator data on the substrate using an alignment sensor, determining a correlation between the KPI data and focus offset data for positions on the substrate, and using the correlation and the KPI data, generating a focus prediction map for the substrate. In another approach, the prediction map is generated by obtaining a first layer height map for a first layer, measuring, with a level sensor, a second layer height map for a second layer overlying the first layer, and subtracting the first height map from the second height map to obtain a delta height map for the substrate.

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